JPH0143458B2 - - Google Patents
Info
- Publication number
- JPH0143458B2 JPH0143458B2 JP4926581A JP4926581A JPH0143458B2 JP H0143458 B2 JPH0143458 B2 JP H0143458B2 JP 4926581 A JP4926581 A JP 4926581A JP 4926581 A JP4926581 A JP 4926581A JP H0143458 B2 JPH0143458 B2 JP H0143458B2
- Authority
- JP
- Japan
- Prior art keywords
- grid line
- semiconductor
- semiconductor substrate
- semiconductor device
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 230000001681 protective effect Effects 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
- 239000003870 refractory metal Substances 0.000 claims 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 21
- 229910021339 platinum silicide Inorganic materials 0.000 description 21
- 238000000206 photolithography Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000005360 phosphosilicate glass Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4926581A JPS57164546A (en) | 1981-04-03 | 1981-04-03 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4926581A JPS57164546A (en) | 1981-04-03 | 1981-04-03 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57164546A JPS57164546A (en) | 1982-10-09 |
| JPH0143458B2 true JPH0143458B2 (fr) | 1989-09-20 |
Family
ID=12825992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4926581A Granted JPS57164546A (en) | 1981-04-03 | 1981-04-03 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57164546A (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59121851A (ja) * | 1982-12-28 | 1984-07-14 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPS6255941A (ja) * | 1985-09-05 | 1987-03-11 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| JPH02308551A (ja) * | 1989-05-23 | 1990-12-21 | Nec Corp | 半導体ウェーハ |
| JPH0622991Y2 (ja) * | 1990-02-28 | 1994-06-15 | 沖電気工業株式会社 | 化合物半導体ウエハ |
| JP2012204568A (ja) * | 2011-03-25 | 2012-10-22 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS498165A (fr) * | 1972-05-10 | 1974-01-24 | ||
| JPS52122090A (en) * | 1976-04-06 | 1977-10-13 | Toshiba Corp | Semiconductor integrated circuit device |
| JPS5457957A (en) * | 1977-10-18 | 1979-05-10 | Mitsubishi Electric Corp | Production of semiconductor device |
-
1981
- 1981-04-03 JP JP4926581A patent/JPS57164546A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS498165A (fr) * | 1972-05-10 | 1974-01-24 | ||
| JPS52122090A (en) * | 1976-04-06 | 1977-10-13 | Toshiba Corp | Semiconductor integrated circuit device |
| JPS5457957A (en) * | 1977-10-18 | 1979-05-10 | Mitsubishi Electric Corp | Production of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57164546A (en) | 1982-10-09 |
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