JPH0141268B2 - - Google Patents

Info

Publication number
JPH0141268B2
JPH0141268B2 JP23185983A JP23185983A JPH0141268B2 JP H0141268 B2 JPH0141268 B2 JP H0141268B2 JP 23185983 A JP23185983 A JP 23185983A JP 23185983 A JP23185983 A JP 23185983A JP H0141268 B2 JPH0141268 B2 JP H0141268B2
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser device
semiconductor
scribe point
mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP23185983A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60123086A (ja
Inventor
Hideaki Noguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58231859A priority Critical patent/JPS60123086A/ja
Publication of JPS60123086A publication Critical patent/JPS60123086A/ja
Publication of JPH0141268B2 publication Critical patent/JPH0141268B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Dicing (AREA)
  • Semiconductor Lasers (AREA)
JP58231859A 1983-12-08 1983-12-08 半導体レ−ザの製造方法 Granted JPS60123086A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58231859A JPS60123086A (ja) 1983-12-08 1983-12-08 半導体レ−ザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58231859A JPS60123086A (ja) 1983-12-08 1983-12-08 半導体レ−ザの製造方法

Publications (2)

Publication Number Publication Date
JPS60123086A JPS60123086A (ja) 1985-07-01
JPH0141268B2 true JPH0141268B2 (enrdf_load_stackoverflow) 1989-09-04

Family

ID=16930132

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58231859A Granted JPS60123086A (ja) 1983-12-08 1983-12-08 半導体レ−ザの製造方法

Country Status (1)

Country Link
JP (1) JPS60123086A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5593815A (en) * 1989-07-31 1997-01-14 Goldstar Co., Ltd. Cleaving process in manufacturing a semiconductor laser
US5629233A (en) * 1996-04-04 1997-05-13 Lucent Technologies Inc. Method of making III/V semiconductor lasers
JP4539077B2 (ja) 2003-10-29 2010-09-08 日本電気株式会社 半導体素子の製造方法
JP4573863B2 (ja) * 2006-11-30 2010-11-04 三洋電機株式会社 窒化物系半導体素子の製造方法
DE102012112531A1 (de) * 2012-12-18 2014-06-18 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiter-Laserelementen und Halbleiter-Laserelement

Also Published As

Publication number Publication date
JPS60123086A (ja) 1985-07-01

Similar Documents

Publication Publication Date Title
US5814532A (en) Method of manufacturing semiconductor laser
EP0025690B1 (en) A method of producing semiconductor laser elements
US5182233A (en) Compound semiconductor pellet, and method for dicing compound semiconductor wafer
KR100854986B1 (ko) 화합물 반도체 소자 웨이퍼의 제조방법
JP2780618B2 (ja) 窒化ガリウム系化合物半導体チップの製造方法
JPH08330628A (ja) 半導体発光素子、及びその製造方法
US6335559B1 (en) Semiconductor device cleave initiation
JP2861991B2 (ja) 窒化ガリウム系化合物半導体チップの製造方法
US3341937A (en) Crystalline injection laser device manufacture
US4849982A (en) Semiconductor laser chip having a layer structure to reduce the probability of an ungrown region
JPH0141268B2 (enrdf_load_stackoverflow)
US4692927A (en) Light emitting device with improved electrode structure to minimize short circuiting
JP2859478B2 (ja) 発光デバイス用の窒化ガリウム系化合物半導体ウエハーの切断方法
JPH0983081A (ja) 半導体レーザ素子の製造方法
JPH0342508B2 (enrdf_load_stackoverflow)
JPH02132844A (ja) 化合物半導体ウェハの分割方法
JPH07307316A (ja) Ｉｉｉ −ｖ族半導体ウエ−ハ及びその加工方法
JPH0144030B2 (enrdf_load_stackoverflow)
JP3473134B2 (ja) 半導体レーザの製造方法
JPS6164176A (ja) 発光ダイオ−ドの分割方法
US4731344A (en) Method of making a single heterostructure laser chip having sawn cavities and secondary saw cuts
JPS6237901B2 (enrdf_load_stackoverflow)
KR940002763B1 (ko) Iii-v족 반도체펠렛
JPS6226183B2 (enrdf_load_stackoverflow)
JPS62193800A (ja) 板状物分断方法およびその分断装置

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees