JPH0141268B2 - - Google Patents

Info

Publication number
JPH0141268B2
JPH0141268B2 JP23185983A JP23185983A JPH0141268B2 JP H0141268 B2 JPH0141268 B2 JP H0141268B2 JP 23185983 A JP23185983 A JP 23185983A JP 23185983 A JP23185983 A JP 23185983A JP H0141268 B2 JPH0141268 B2 JP H0141268B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP23185983A
Other versions
JPS60123086A (en
Inventor
Hideaki Noguchi
Original Assignee
Nippon Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co filed Critical Nippon Electric Co
Priority to JP23185983A priority Critical patent/JPH0141268B2/ja
Publication of JPS60123086A publication Critical patent/JPS60123086A/en
Publication of JPH0141268B2 publication Critical patent/JPH0141268B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/0201Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202Cleaving
JP23185983A 1983-12-08 1983-12-08 Expired JPH0141268B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23185983A JPH0141268B2 (en) 1983-12-08 1983-12-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23185983A JPH0141268B2 (en) 1983-12-08 1983-12-08

Publications (2)

Publication Number Publication Date
JPS60123086A JPS60123086A (en) 1985-07-01
JPH0141268B2 true JPH0141268B2 (en) 1989-09-04

Family

ID=16930132

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23185983A Expired JPH0141268B2 (en) 1983-12-08 1983-12-08

Country Status (1)

Country Link
JP (1) JPH0141268B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5593815A (en) * 1989-07-31 1997-01-14 Goldstar Co., Ltd. Cleaving process in manufacturing a semiconductor laser
EP0573724B1 (en) * 1992-06-09 1995-09-13 International Business Machines Corporation Full-wafer processing of laser diodes with cleaved facets
US5629233A (en) * 1996-04-04 1997-05-13 Lucent Technologies Inc. Method of making III/V semiconductor lasers
JP4539077B2 (en) 2003-10-29 2010-09-08 日本電気株式会社 Manufacturing method of semiconductor device
JP4573863B2 (en) * 2006-11-30 2010-11-04 三洋電機株式会社 Nitride semiconductor device manufacturing method
DE102012112531A1 (en) 2012-12-18 2014-06-18 Osram Opto Semiconductors Gmbh Method for producing semiconductor laser elements and semiconductor laser element

Also Published As

Publication number Publication date
JPS60123086A (en) 1985-07-01

Similar Documents

Publication Publication Date Title
CA1255924C (en)
DE3300142C2 (en)
DE3300882C2 (en)
BG45346A1 (en)
DE3302425C2 (en)
DE3300236C2 (en)
CA1257633C (en)
DE3301264C2 (en)
CU21786A3 (en)
CA1263959C (en)
DE3300307C2 (en)
DE3300023C2 (en)
AU527339B2 (en)
DE3301559C2 (en)
DE3301248C2 (en)
BG44937A1 (en)
DE3301256C2 (en)
CA1257226C (en)
DE3300352C2 (en)
DE3300460C2 (en)
BG45045A3 (en)
DE3301703C2 (en)
DE3302265C2 (en)
DE3301732C2 (en)
DE3302571C2 (en)

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees