JPH0139661B2 - - Google Patents

Info

Publication number
JPH0139661B2
JPH0139661B2 JP57147779A JP14777982A JPH0139661B2 JP H0139661 B2 JPH0139661 B2 JP H0139661B2 JP 57147779 A JP57147779 A JP 57147779A JP 14777982 A JP14777982 A JP 14777982A JP H0139661 B2 JPH0139661 B2 JP H0139661B2
Authority
JP
Japan
Prior art keywords
region
corner
junction
width
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57147779A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5939066A (ja
Inventor
Toshikatsu Shirasawa
Yoshikazu Hosokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57147779A priority Critical patent/JPS5939066A/ja
Priority to CA000435178A priority patent/CA1190663A/en
Priority to DE8383108420T priority patent/DE3379299D1/de
Priority to EP83108420A priority patent/EP0104454B1/en
Publication of JPS5939066A publication Critical patent/JPS5939066A/ja
Priority to US06/816,979 priority patent/US4654691A/en
Publication of JPH0139661B2 publication Critical patent/JPH0139661B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/251—Lateral thyristors

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
JP57147779A 1982-08-27 1982-08-27 半導体集積回路 Granted JPS5939066A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP57147779A JPS5939066A (ja) 1982-08-27 1982-08-27 半導体集積回路
CA000435178A CA1190663A (en) 1982-08-27 1983-08-23 Semiconductor device with field plate
DE8383108420T DE3379299D1 (en) 1982-08-27 1983-08-26 Semiconductor device with field plate
EP83108420A EP0104454B1 (en) 1982-08-27 1983-08-26 Semiconductor device with field plate
US06/816,979 US4654691A (en) 1982-08-27 1986-01-07 Semiconductor device with field plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57147779A JPS5939066A (ja) 1982-08-27 1982-08-27 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS5939066A JPS5939066A (ja) 1984-03-03
JPH0139661B2 true JPH0139661B2 (OSRAM) 1989-08-22

Family

ID=15437992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57147779A Granted JPS5939066A (ja) 1982-08-27 1982-08-27 半導体集積回路

Country Status (5)

Country Link
US (1) US4654691A (OSRAM)
EP (1) EP0104454B1 (OSRAM)
JP (1) JPS5939066A (OSRAM)
CA (1) CA1190663A (OSRAM)
DE (1) DE3379299D1 (OSRAM)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61114574A (ja) * 1984-11-09 1986-06-02 Hitachi Ltd 半導体装置
JP2513617B2 (ja) * 1986-01-24 1996-07-03 株式会社東芝 正規化回路
FR2594596B1 (fr) * 1986-02-18 1988-08-26 Thomson Csf Structure semiconductrice associant un ou plusieurs transistors de puissance et leur logique de commande et de protection
US4786958A (en) * 1986-11-17 1988-11-22 General Motors Corporation Lateral dual gate thyristor and method of fabricating same
JP2896141B2 (ja) * 1987-02-26 1999-05-31 株式会社東芝 高耐圧半導体素子
US5241210A (en) * 1987-02-26 1993-08-31 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
US4861731A (en) * 1988-02-02 1989-08-29 General Motors Corporation Method of fabricating a lateral dual gate thyristor
JP2507557B2 (ja) * 1988-09-29 1996-06-12 三菱電機株式会社 半導体装置の製造方法
US5107312A (en) * 1989-09-11 1992-04-21 Harris Corporation Method of isolating a top gate of a MESFET and the resulting device
JP2903749B2 (ja) * 1991-03-29 1999-06-14 富士電機株式会社 伝導度変調型ｍｉｓｆｅｔを備えた半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1140822A (en) * 1967-01-26 1969-01-22 Westinghouse Brake & Signal Semi-conductor elements
JPS54122983A (en) * 1978-03-17 1979-09-22 Hitachi Ltd Semiconductor integrated circuit
JPS584829B2 (ja) * 1978-03-31 1983-01-27 日本電信電話株式会社 半導体集積回路
JPS55133553A (en) * 1979-04-03 1980-10-17 Hitachi Ltd Semiconductor integrated device
JPS5753944A (en) * 1980-09-17 1982-03-31 Hitachi Ltd Semiconductor integrated circuit
US4412242A (en) * 1980-11-17 1983-10-25 International Rectifier Corporation Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
JPH108771A (ja) * 1996-06-21 1998-01-13 Mitsubishi Steel Mfg Co Ltd 建造物用制振装置

Also Published As

Publication number Publication date
CA1190663A (en) 1985-07-16
DE3379299D1 (en) 1989-04-06
EP0104454B1 (en) 1989-03-01
EP0104454A2 (en) 1984-04-04
JPS5939066A (ja) 1984-03-03
US4654691A (en) 1987-03-31
EP0104454A3 (en) 1985-09-25

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