JPH0136270B2 - - Google Patents

Info

Publication number
JPH0136270B2
JPH0136270B2 JP56031361A JP3136181A JPH0136270B2 JP H0136270 B2 JPH0136270 B2 JP H0136270B2 JP 56031361 A JP56031361 A JP 56031361A JP 3136181 A JP3136181 A JP 3136181A JP H0136270 B2 JPH0136270 B2 JP H0136270B2
Authority
JP
Japan
Prior art keywords
region
thyristor
diode
type
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56031361A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57147276A (en
Inventor
Susumu Murakami
Yoshio Terasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3136181A priority Critical patent/JPS57147276A/ja
Publication of JPS57147276A publication Critical patent/JPS57147276A/ja
Publication of JPH0136270B2 publication Critical patent/JPH0136270B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391Gated diode structures
    • H01L29/7392Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP3136181A 1981-03-06 1981-03-06 Reverse conductive type semiconductor switching device Granted JPS57147276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3136181A JPS57147276A (en) 1981-03-06 1981-03-06 Reverse conductive type semiconductor switching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3136181A JPS57147276A (en) 1981-03-06 1981-03-06 Reverse conductive type semiconductor switching device

Publications (2)

Publication Number Publication Date
JPS57147276A JPS57147276A (en) 1982-09-11
JPH0136270B2 true JPH0136270B2 (fr) 1989-07-31

Family

ID=12329095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3136181A Granted JPS57147276A (en) 1981-03-06 1981-03-06 Reverse conductive type semiconductor switching device

Country Status (1)

Country Link
JP (1) JPS57147276A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04104067U (ja) * 1991-02-15 1992-09-08 日信工業株式会社 マスタシリンダ用リザーバ

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074677A (ja) * 1983-09-30 1985-04-26 Toshiba Corp 複合型サイリスタ
JPS6098671A (ja) * 1983-11-02 1985-06-01 Toshiba Corp 複合型サイリスタ
JPS60143788U (ja) * 1984-03-05 1985-09-24 株式会社豊田自動織機製作所 流体噴射式織機における補助ノズルの高さ位置調整装置
JP2547468B2 (ja) * 1990-06-12 1996-10-23 三菱電機株式会社 半導体装置およびその製造方法
JP2858445B2 (ja) * 1994-07-27 1999-02-17 東洋電機製造株式会社 自己消弧型逆導通サイリスタ
JP2799963B2 (ja) * 1995-01-31 1998-09-21 東洋電機製造株式会社 埋込みゲート構造もしくは切込みゲート構造を有する逆導通サイリスタ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4812967B1 (fr) * 1968-09-04 1973-04-24
JPS5422179A (en) * 1977-07-20 1979-02-19 Hitachi Ltd Semiconductor switching element
JPS54127687A (en) * 1978-03-28 1979-10-03 Mitsubishi Electric Corp Planar-type reverse conducting thyristor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4812967U (fr) * 1971-06-24 1973-02-13

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4812967B1 (fr) * 1968-09-04 1973-04-24
JPS5422179A (en) * 1977-07-20 1979-02-19 Hitachi Ltd Semiconductor switching element
JPS54127687A (en) * 1978-03-28 1979-10-03 Mitsubishi Electric Corp Planar-type reverse conducting thyristor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04104067U (ja) * 1991-02-15 1992-09-08 日信工業株式会社 マスタシリンダ用リザーバ

Also Published As

Publication number Publication date
JPS57147276A (en) 1982-09-11

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