JPH0136270B2 - - Google Patents
Info
- Publication number
- JPH0136270B2 JPH0136270B2 JP56031361A JP3136181A JPH0136270B2 JP H0136270 B2 JPH0136270 B2 JP H0136270B2 JP 56031361 A JP56031361 A JP 56031361A JP 3136181 A JP3136181 A JP 3136181A JP H0136270 B2 JPH0136270 B2 JP H0136270B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- thyristor
- diode
- type
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 19
- 230000006698 induction Effects 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 239000012535 impurity Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3136181A JPS57147276A (en) | 1981-03-06 | 1981-03-06 | Reverse conductive type semiconductor switching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3136181A JPS57147276A (en) | 1981-03-06 | 1981-03-06 | Reverse conductive type semiconductor switching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57147276A JPS57147276A (en) | 1982-09-11 |
| JPH0136270B2 true JPH0136270B2 (fr) | 1989-07-31 |
Family
ID=12329095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3136181A Granted JPS57147276A (en) | 1981-03-06 | 1981-03-06 | Reverse conductive type semiconductor switching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57147276A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04104067U (ja) * | 1991-02-15 | 1992-09-08 | 日信工業株式会社 | マスタシリンダ用リザーバ |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6074677A (ja) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | 複合型サイリスタ |
| JPS6098671A (ja) * | 1983-11-02 | 1985-06-01 | Toshiba Corp | 複合型サイリスタ |
| JPS60143788U (ja) * | 1984-03-05 | 1985-09-24 | 株式会社豊田自動織機製作所 | 流体噴射式織機における補助ノズルの高さ位置調整装置 |
| JP2547468B2 (ja) * | 1990-06-12 | 1996-10-23 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JP2858445B2 (ja) * | 1994-07-27 | 1999-02-17 | 東洋電機製造株式会社 | 自己消弧型逆導通サイリスタ |
| JP2799963B2 (ja) * | 1995-01-31 | 1998-09-21 | 東洋電機製造株式会社 | 埋込みゲート構造もしくは切込みゲート構造を有する逆導通サイリスタ |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4812967B1 (fr) * | 1968-09-04 | 1973-04-24 | ||
| JPS5422179A (en) * | 1977-07-20 | 1979-02-19 | Hitachi Ltd | Semiconductor switching element |
| JPS54127687A (en) * | 1978-03-28 | 1979-10-03 | Mitsubishi Electric Corp | Planar-type reverse conducting thyristor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4812967U (fr) * | 1971-06-24 | 1973-02-13 |
-
1981
- 1981-03-06 JP JP3136181A patent/JPS57147276A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4812967B1 (fr) * | 1968-09-04 | 1973-04-24 | ||
| JPS5422179A (en) * | 1977-07-20 | 1979-02-19 | Hitachi Ltd | Semiconductor switching element |
| JPS54127687A (en) * | 1978-03-28 | 1979-10-03 | Mitsubishi Electric Corp | Planar-type reverse conducting thyristor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04104067U (ja) * | 1991-02-15 | 1992-09-08 | 日信工業株式会社 | マスタシリンダ用リザーバ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57147276A (en) | 1982-09-11 |
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