JPH0132673B2 - - Google Patents
Info
- Publication number
- JPH0132673B2 JPH0132673B2 JP56000588A JP58881A JPH0132673B2 JP H0132673 B2 JPH0132673 B2 JP H0132673B2 JP 56000588 A JP56000588 A JP 56000588A JP 58881 A JP58881 A JP 58881A JP H0132673 B2 JPH0132673 B2 JP H0132673B2
- Authority
- JP
- Japan
- Prior art keywords
- drain
- floating gate
- region
- gate electrode
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 22
- 239000012535 impurity Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 13
- 230000005641 tunneling Effects 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 16
- 239000011574 phosphorus Substances 0.000 description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000003031 high energy carrier Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- -1 phosphorus ions Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58881A JPS57114282A (en) | 1981-01-06 | 1981-01-06 | Non-volatile semiconductor memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58881A JPS57114282A (en) | 1981-01-06 | 1981-01-06 | Non-volatile semiconductor memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57114282A JPS57114282A (en) | 1982-07-16 |
| JPH0132673B2 true JPH0132673B2 (ko) | 1989-07-10 |
Family
ID=11477879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58881A Granted JPS57114282A (en) | 1981-01-06 | 1981-01-06 | Non-volatile semiconductor memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57114282A (ko) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4698787A (en) * | 1984-11-21 | 1987-10-06 | Exel Microelectronics, Inc. | Single transistor electrically programmable memory device and method |
| JPS622570A (ja) * | 1985-04-30 | 1987-01-08 | テキサス インスツルメンツ インコ−ポレイテツド | フロ−テイング・ゲ−ト電界効果トランジスタ |
| JPS62118581A (ja) * | 1985-09-27 | 1987-05-29 | テキサス インスツルメンツ インコ−ポレイテツド | Ｅｅｐｒｏｍメモリセルおよびその製作方法 |
| JP2555027B2 (ja) * | 1986-05-26 | 1996-11-20 | 株式会社日立製作所 | 半導体記憶装置 |
| JP2602244B2 (ja) * | 1987-09-24 | 1997-04-23 | 株式会社日立製作所 | 半導体記憶装置 |
| KR100256322B1 (ko) * | 1994-03-03 | 2000-05-15 | 제니 필더 | 파울러-노드하임 프로그래밍 및 이레이즈를 이용한 저전압 단일트랜지스터 플래쉬 이이피롬셀 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5178991A (ko) * | 1974-12-30 | 1976-07-09 | Intel Corp |
-
1981
- 1981-01-06 JP JP58881A patent/JPS57114282A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5178991A (ko) * | 1974-12-30 | 1976-07-09 | Intel Corp |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57114282A (en) | 1982-07-16 |
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