JPH01320296A - Bi↓1↓2SiO↓2↓0単結晶の製造方法 - Google Patents
Bi↓1↓2SiO↓2↓0単結晶の製造方法Info
- Publication number
- JPH01320296A JPH01320296A JP15399988A JP15399988A JPH01320296A JP H01320296 A JPH01320296 A JP H01320296A JP 15399988 A JP15399988 A JP 15399988A JP 15399988 A JP15399988 A JP 15399988A JP H01320296 A JPH01320296 A JP H01320296A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- single crystal
- crystal
- growing
- bi12sio20
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims abstract description 31
- 239000000155 melt Substances 0.000 claims abstract description 16
- 239000000203 mixture Substances 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 238000004857 zone melting Methods 0.000 claims abstract description 5
- 230000003287 optical effect Effects 0.000 abstract description 7
- 238000002834 transmittance Methods 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000002994 raw material Substances 0.000 description 9
- 229910052797 bismuth Inorganic materials 0.000 description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000003570 air Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15399988A JPH01320296A (ja) | 1988-06-22 | 1988-06-22 | Bi↓1↓2SiO↓2↓0単結晶の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15399988A JPH01320296A (ja) | 1988-06-22 | 1988-06-22 | Bi↓1↓2SiO↓2↓0単結晶の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01320296A true JPH01320296A (ja) | 1989-12-26 |
JPH0521878B2 JPH0521878B2 (enrdf_load_stackoverflow) | 1993-03-25 |
Family
ID=15574702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15399988A Granted JPH01320296A (ja) | 1988-06-22 | 1988-06-22 | Bi↓1↓2SiO↓2↓0単結晶の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01320296A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102351202A (zh) * | 2011-07-06 | 2012-02-15 | 陕西科技大学 | 一种硅酸铋粉体的制备方法 |
CN104562205A (zh) * | 2015-01-28 | 2015-04-29 | 中国科学院上海硅酸盐研究所 | 一种阴阳离子共掺杂的硅酸铋闪烁晶体及其制备方法 |
CN112342622A (zh) * | 2020-09-24 | 2021-02-09 | 彩虹集团(邵阳)特种玻璃有限公司 | 一种高纯单相Bi12SiO20多晶的制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51120693A (en) * | 1975-04-16 | 1976-10-22 | Sumitomo Electric Ind Ltd | Fablication method for photoconductive single-crystal |
JPS5315299A (en) * | 1976-07-28 | 1978-02-10 | Sumitomo Electric Ind Ltd | Liquid-phase epitaxial growth method of electrooptical crystals |
-
1988
- 1988-06-22 JP JP15399988A patent/JPH01320296A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51120693A (en) * | 1975-04-16 | 1976-10-22 | Sumitomo Electric Ind Ltd | Fablication method for photoconductive single-crystal |
JPS5315299A (en) * | 1976-07-28 | 1978-02-10 | Sumitomo Electric Ind Ltd | Liquid-phase epitaxial growth method of electrooptical crystals |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102351202A (zh) * | 2011-07-06 | 2012-02-15 | 陕西科技大学 | 一种硅酸铋粉体的制备方法 |
CN104562205A (zh) * | 2015-01-28 | 2015-04-29 | 中国科学院上海硅酸盐研究所 | 一种阴阳离子共掺杂的硅酸铋闪烁晶体及其制备方法 |
CN112342622A (zh) * | 2020-09-24 | 2021-02-09 | 彩虹集团(邵阳)特种玻璃有限公司 | 一种高纯单相Bi12SiO20多晶的制备方法 |
CN112342622B (zh) * | 2020-09-24 | 2022-05-17 | 彩虹集团(邵阳)特种玻璃有限公司 | 一种高纯单相Bi12SiO20多晶的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0521878B2 (enrdf_load_stackoverflow) | 1993-03-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |