JPH0130295B2 - - Google Patents
Info
- Publication number
- JPH0130295B2 JPH0130295B2 JP11763881A JP11763881A JPH0130295B2 JP H0130295 B2 JPH0130295 B2 JP H0130295B2 JP 11763881 A JP11763881 A JP 11763881A JP 11763881 A JP11763881 A JP 11763881A JP H0130295 B2 JPH0130295 B2 JP H0130295B2
- Authority
- JP
- Japan
- Prior art keywords
- glass
- silicon oxide
- film
- oxide film
- zno
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011521 glass Substances 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 15
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 description 6
- 238000004070 electrodeposition Methods 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- 238000001962 electrophoresis Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910007472 ZnO—B2O3—SiO2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11763881A JPS5821336A (ja) | 1981-07-29 | 1981-07-29 | 半導体素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11763881A JPS5821336A (ja) | 1981-07-29 | 1981-07-29 | 半導体素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5821336A JPS5821336A (ja) | 1983-02-08 |
| JPH0130295B2 true JPH0130295B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-06-19 |
Family
ID=14716649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11763881A Granted JPS5821336A (ja) | 1981-07-29 | 1981-07-29 | 半導体素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5821336A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2633865B2 (ja) * | 1987-10-02 | 1997-07-23 | 株式会社日立製作所 | トラッキング方法 |
| KR100626382B1 (ko) | 2004-08-03 | 2006-09-20 | 삼성전자주식회사 | 식각 용액 및 이를 이용한 자기 기억 소자의 형성 방법 |
| JP4816250B2 (ja) * | 2006-05-25 | 2011-11-16 | 三菱瓦斯化学株式会社 | エッチング液組成物及びエッチング方法 |
| JP2008159814A (ja) * | 2006-12-22 | 2008-07-10 | Mitsui Mining & Smelting Co Ltd | 酸化亜鉛系薄膜用エッチャント及び酸化亜鉛系薄膜のパターニング方法 |
-
1981
- 1981-07-29 JP JP11763881A patent/JPS5821336A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5821336A (ja) | 1983-02-08 |