JPH0228252B2 - - Google Patents

Info

Publication number
JPH0228252B2
JPH0228252B2 JP58081733A JP8173383A JPH0228252B2 JP H0228252 B2 JPH0228252 B2 JP H0228252B2 JP 58081733 A JP58081733 A JP 58081733A JP 8173383 A JP8173383 A JP 8173383A JP H0228252 B2 JPH0228252 B2 JP H0228252B2
Authority
JP
Japan
Prior art keywords
glass
film
pbo
melting point
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58081733A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59208729A (ja
Inventor
Shigeru Honjo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58081733A priority Critical patent/JPS59208729A/ja
Publication of JPS59208729A publication Critical patent/JPS59208729A/ja
Publication of JPH0228252B2 publication Critical patent/JPH0228252B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Formation Of Insulating Films (AREA)
JP58081733A 1983-05-12 1983-05-12 半導体装置の製造方法 Granted JPS59208729A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58081733A JPS59208729A (ja) 1983-05-12 1983-05-12 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58081733A JPS59208729A (ja) 1983-05-12 1983-05-12 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59208729A JPS59208729A (ja) 1984-11-27
JPH0228252B2 true JPH0228252B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-06-22

Family

ID=13754623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58081733A Granted JPS59208729A (ja) 1983-05-12 1983-05-12 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59208729A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5453395A (en) * 1994-03-21 1995-09-26 United Microelectronics Corp. Isolation technology using liquid phase deposition
US5445989A (en) * 1994-08-23 1995-08-29 United Microelectronics Corp. Method of forming device isolation regions
CN1302523C (zh) * 2004-12-21 2007-02-28 天津中环半导体股份有限公司 一种台面整流器件的玻璃钝化形成工艺

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5632735A (en) * 1979-08-27 1981-04-02 Toshiba Corp Manufacture of mesa type semiconductor device

Also Published As

Publication number Publication date
JPS59208729A (ja) 1984-11-27

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