JPH01290220A - 化合物半導体層の成長方法 - Google Patents
化合物半導体層の成長方法Info
- Publication number
- JPH01290220A JPH01290220A JP11928088A JP11928088A JPH01290220A JP H01290220 A JPH01290220 A JP H01290220A JP 11928088 A JP11928088 A JP 11928088A JP 11928088 A JP11928088 A JP 11928088A JP H01290220 A JPH01290220 A JP H01290220A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- layer
- growth
- buffer layer
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 39
- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims description 28
- 239000000872 buffer Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 235000021170 buffet Nutrition 0.000 abstract 1
- 230000001788 irregular Effects 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 16
- 235000012431 wafers Nutrition 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000006173 Good's buffer Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11928088A JPH01290220A (ja) | 1988-05-18 | 1988-05-18 | 化合物半導体層の成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11928088A JPH01290220A (ja) | 1988-05-18 | 1988-05-18 | 化合物半導体層の成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01290220A true JPH01290220A (ja) | 1989-11-22 |
| JPH0573333B2 JPH0573333B2 (enrdf_load_stackoverflow) | 1993-10-14 |
Family
ID=14757475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11928088A Granted JPH01290220A (ja) | 1988-05-18 | 1988-05-18 | 化合物半導体層の成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01290220A (enrdf_load_stackoverflow) |
-
1988
- 1988-05-18 JP JP11928088A patent/JPH01290220A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0573333B2 (enrdf_load_stackoverflow) | 1993-10-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6012724A (ja) | 化合物半導体の成長方法 | |
| JPH01289108A (ja) | ヘテロエピタキシャル成長方法 | |
| JPH03160714A (ja) | 半導体装置及びその製造方法 | |
| JPH04198095A (ja) | 化合物半導体薄膜成長方法 | |
| JPH0236059B2 (ja) | Kagobutsuhandotainoseichohoho | |
| JPS6230692B2 (enrdf_load_stackoverflow) | ||
| JPH01290220A (ja) | 化合物半導体層の成長方法 | |
| JPS6170715A (ja) | 化合物半導体の成長方法 | |
| JPS60148127A (ja) | 半導体基板の製造方法 | |
| JP2522428B2 (ja) | ＧａＡｓ基板上にＩｎＰ層を結晶成長させる方法 | |
| JPS6012775B2 (ja) | 異質基板上への単結晶半導体層形成方法 | |
| JPS58138034A (ja) | 半導体装置の製造方法 | |
| JP3078927B2 (ja) | 化合物半導体薄膜の成長方法 | |
| JPS63182815A (ja) | エピタキシアルウエ−ハの製造方法 | |
| JPH01120011A (ja) | ＩｎＰ半導体薄膜の製造方法 | |
| JPH01312821A (ja) | ヘテロエピタキシャル成長方法 | |
| JPS60119713A (ja) | 半導体装置の製造方法 | |
| JPS62219614A (ja) | 化合物半導体の成長方法 | |
| JPH01179788A (ja) | Ｓｉ基板上への３−５族化合物半導体結晶の成長方法 | |
| JPH033363A (ja) | 半導体薄膜の製造方法 | |
| JPH0289306A (ja) | 半導体薄膜の形成方法 | |
| JPS63137412A (ja) | 半導体用基板の製造方法 | |
| JPH02142116A (ja) | エピタキシャル結晶成長法 | |
| JPH0222812A (ja) | 化合物半導体層の成長方法 | |
| JPH01143235A (ja) | エピタキシヤル成長用結晶基板 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |