JPS6230692B2 - - Google Patents

Info

Publication number
JPS6230692B2
JPS6230692B2 JP55116648A JP11664880A JPS6230692B2 JP S6230692 B2 JPS6230692 B2 JP S6230692B2 JP 55116648 A JP55116648 A JP 55116648A JP 11664880 A JP11664880 A JP 11664880A JP S6230692 B2 JPS6230692 B2 JP S6230692B2
Authority
JP
Japan
Prior art keywords
substrate
yield
carbon concentration
semiconductor
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55116648A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5740940A (en
Inventor
Yoshuki Shibamata
Masamichi Yoshida
Junosuke Kawabe
Yutaka Tabata
Tsunenori Yamauchi
Atsuo Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11664880A priority Critical patent/JPS5740940A/ja
Publication of JPS5740940A publication Critical patent/JPS5740940A/ja
Publication of JPS6230692B2 publication Critical patent/JPS6230692B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP11664880A 1980-08-25 1980-08-25 Semiconductor device Granted JPS5740940A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11664880A JPS5740940A (en) 1980-08-25 1980-08-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11664880A JPS5740940A (en) 1980-08-25 1980-08-25 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5740940A JPS5740940A (en) 1982-03-06
JPS6230692B2 true JPS6230692B2 (enrdf_load_stackoverflow) 1987-07-03

Family

ID=14692421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11664880A Granted JPS5740940A (en) 1980-08-25 1980-08-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5740940A (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JPS5935488A (ja) * 1982-08-24 1984-02-27 Semiconductor Energy Lab Co Ltd 半導体装置
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
US5468653A (en) * 1982-08-24 1995-11-21 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
JPS59115574A (ja) 1982-12-23 1984-07-04 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
JPS63111379A (ja) * 1986-10-25 1988-05-16 Nippon Boorubarubu Kk ボ−ルバルブ
JPS63111380A (ja) * 1987-02-06 1988-05-16 Nippon Boorubarubu Kk ボ−ルバルブ
US5710967A (en) * 1996-07-12 1998-01-20 Ricoh Company, Ltd. Apparatus which indicates to a user the proper placement of pages to be scanned

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS=1979 *

Also Published As

Publication number Publication date
JPS5740940A (en) 1982-03-06

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