JPS5740940A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5740940A JPS5740940A JP11664880A JP11664880A JPS5740940A JP S5740940 A JPS5740940 A JP S5740940A JP 11664880 A JP11664880 A JP 11664880A JP 11664880 A JP11664880 A JP 11664880A JP S5740940 A JPS5740940 A JP S5740940A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- epitaxial
- layer
- manufacturing yield
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11664880A JPS5740940A (en) | 1980-08-25 | 1980-08-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11664880A JPS5740940A (en) | 1980-08-25 | 1980-08-25 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5740940A true JPS5740940A (en) | 1982-03-06 |
JPS6230692B2 JPS6230692B2 (enrdf_load_stackoverflow) | 1987-07-03 |
Family
ID=14692421
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11664880A Granted JPS5740940A (en) | 1980-08-25 | 1980-08-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5740940A (enrdf_load_stackoverflow) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5935488A (ja) * | 1982-08-24 | 1984-02-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JPS63111379A (ja) * | 1986-10-25 | 1988-05-16 | Nippon Boorubarubu Kk | ボ−ルバルブ |
JPS63111380A (ja) * | 1987-02-06 | 1988-05-16 | Nippon Boorubarubu Kk | ボ−ルバルブ |
US5710967A (en) * | 1996-07-12 | 1998-01-20 | Ricoh Company, Ltd. | Apparatus which indicates to a user the proper placement of pages to be scanned |
US6028264A (en) * | 1982-08-24 | 2000-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of carbon |
US6180991B1 (en) | 1982-12-23 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of phosphorous |
USRE37441E1 (en) | 1982-08-24 | 2001-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
US6346716B1 (en) | 1982-12-23 | 2002-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material having particular oxygen concentration and semiconductor device comprising the same |
US6664566B1 (en) | 1982-08-24 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
USRE38727E1 (en) | 1982-08-24 | 2005-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
-
1980
- 1980-08-25 JP JP11664880A patent/JPS5740940A/ja active Granted
Non-Patent Citations (1)
Title |
---|
APPLIED PHYSICS LETTERS=1979 * |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5935488A (ja) * | 1982-08-24 | 1984-02-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US6028264A (en) * | 1982-08-24 | 2000-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of carbon |
USRE37441E1 (en) | 1982-08-24 | 2001-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
US6664566B1 (en) | 1982-08-24 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
USRE38727E1 (en) | 1982-08-24 | 2005-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
US6180991B1 (en) | 1982-12-23 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of phosphorous |
US6346716B1 (en) | 1982-12-23 | 2002-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material having particular oxygen concentration and semiconductor device comprising the same |
JPS63111379A (ja) * | 1986-10-25 | 1988-05-16 | Nippon Boorubarubu Kk | ボ−ルバルブ |
JPS63111380A (ja) * | 1987-02-06 | 1988-05-16 | Nippon Boorubarubu Kk | ボ−ルバルブ |
US5710967A (en) * | 1996-07-12 | 1998-01-20 | Ricoh Company, Ltd. | Apparatus which indicates to a user the proper placement of pages to be scanned |
Also Published As
Publication number | Publication date |
---|---|
JPS6230692B2 (enrdf_load_stackoverflow) | 1987-07-03 |
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