JPS6312376B2 - - Google Patents

Info

Publication number
JPS6312376B2
JPS6312376B2 JP16445482A JP16445482A JPS6312376B2 JP S6312376 B2 JPS6312376 B2 JP S6312376B2 JP 16445482 A JP16445482 A JP 16445482A JP 16445482 A JP16445482 A JP 16445482A JP S6312376 B2 JPS6312376 B2 JP S6312376B2
Authority
JP
Japan
Prior art keywords
concentration
silicon
oxygen
defects
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP16445482A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5954220A (ja
Inventor
Yoshiaki Suzuki
Osamu Mizuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP16445482A priority Critical patent/JPS5954220A/ja
Publication of JPS5954220A publication Critical patent/JPS5954220A/ja
Publication of JPS6312376B2 publication Critical patent/JPS6312376B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
JP16445482A 1982-09-21 1982-09-21 半導体装置の製造方法 Granted JPS5954220A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16445482A JPS5954220A (ja) 1982-09-21 1982-09-21 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16445482A JPS5954220A (ja) 1982-09-21 1982-09-21 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5954220A JPS5954220A (ja) 1984-03-29
JPS6312376B2 true JPS6312376B2 (enrdf_load_stackoverflow) 1988-03-18

Family

ID=15793477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16445482A Granted JPS5954220A (ja) 1982-09-21 1982-09-21 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5954220A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63104322A (ja) * 1986-10-21 1988-05-09 Toshiba Corp エピタキシヤルウエ−ハ
JP2725460B2 (ja) * 1991-01-22 1998-03-11 日本電気株式会社 エピタキシャルウェハーの製造方法
JP3384506B2 (ja) * 1993-03-30 2003-03-10 ソニー株式会社 半導体基板の製造方法
JP5637871B2 (ja) 2011-01-13 2014-12-10 株式会社椿本チエイン コンベヤチェーン

Also Published As

Publication number Publication date
JPS5954220A (ja) 1984-03-29

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