JPH01279742A - Formation of thin 'sendust(r)' film - Google Patents

Formation of thin 'sendust(r)' film

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Publication number
JPH01279742A
JPH01279742A JP10838288A JP10838288A JPH01279742A JP H01279742 A JPH01279742 A JP H01279742A JP 10838288 A JP10838288 A JP 10838288A JP 10838288 A JP10838288 A JP 10838288A JP H01279742 A JPH01279742 A JP H01279742A
Authority
JP
Japan
Prior art keywords
thin film
sendust
film
chromium
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10838288A
Other languages
Japanese (ja)
Other versions
JPH0751743B2 (en
Inventor
Toshiyuki Fujine
俊之 藤根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP63108382A priority Critical patent/JPH0751743B2/en
Publication of JPH01279742A publication Critical patent/JPH01279742A/en
Publication of JPH0751743B2 publication Critical patent/JPH0751743B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To obtain a thin 'Sendust(R)' film having high magnetic permeability and reduced in coercive force by forming a thin chromium film on a substrate and then forming a thin 'Sendust(R)' film on the above. CONSTITUTION:A thin film of chromium or an alloy composed principally of chromium is formed on a substrate of crystallized glass, etc., by a sputtering method, etc. Then, a thin film of an Fe-Al-Si or a 'Sendust(R)' alloy composed of mainly Fe-Al-Si is formed on the above undercoat layer by a sputtering method, etc. By this method, the thin 'Sendust(R)' film improved in magnetic permeability, reduced in coercive force, and having sufficient soft-magnetic properties can be obtained.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、薄膜磁気ヘッド等の製造に用いるセンダスト
薄膜の成膜方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming a sendust thin film used for manufacturing thin film magnetic heads and the like.

〔従来の技術〕[Conventional technology]

薄膜磁気ヘッド等では、スパッタリング法等により例え
ば膜厚11M以下の非常に薄いセンダスト薄膜を形成す
る必要がある。
For thin film magnetic heads and the like, it is necessary to form a very thin Sendust thin film, for example, 11M or less in thickness, by sputtering or the like.

そして、従来は、第2図に示すように、結晶化ガラス等
からなる基板11上に直接センダスト薄膜12を成膜し
ていた。
Conventionally, as shown in FIG. 2, a sendust thin film 12 was formed directly on a substrate 11 made of crystallized glass or the like.

(発明が解決しようとする課題〕 この従来の成膜方法で成膜されたセンダスト薄膜12の
特性例を示す。ここで基板11は、熱膨張係数135X
10−’(deg−’)の結晶化ガラスを用いた。また
、センダスト薄膜12は、スパッタリング法により膜厚
1μまで成膜した。そして、成膜後は、窒素雰囲気中で
500℃・3時間保持の熱処理を施した。この結果、セ
ンダスト薄膜12の周波数IMIIzにおける透磁率は
560であり、保磁力は3.OOeであった・ このため、従来の成膜方法では、センダスト薄膜の透磁
率が高くならず、また保磁力も大きすぎるために、十分
な軟磁性を得ることができないという問題点が生じてい
た。
(Problems to be Solved by the Invention) An example of the characteristics of the Sendust thin film 12 formed by this conventional film forming method will be shown.Here, the substrate 11 has a thermal expansion coefficient of 135X.
10-'(deg-') crystallized glass was used. The sendust thin film 12 was formed to a thickness of 1 μm by sputtering. After the film was formed, heat treatment was performed at 500° C. for 3 hours in a nitrogen atmosphere. As a result, the magnetic permeability of the Sendust thin film 12 at the frequency IMIIz is 560, and the coercive force is 3. Therefore, with conventional film formation methods, the magnetic permeability of the Sendust thin film did not increase and the coercive force was too large, resulting in the problem that sufficient soft magnetism could not be obtained. .

このように軟磁性が悪化するのは、膜厚が極めて薄いた
めに(022)面の高配向センダスト薄膜を形成するこ
とができないからである。そこで、本発明は、クロム薄
膜を下地層に用いて(022)面の高配向センダスト薄
膜を形成することにより、透磁率が高く、かつ保磁力が
小さいセンダスト薄膜を得ることを目的としている。
The reason why the soft magnetism deteriorates in this way is that it is impossible to form a highly oriented sendust thin film with a (022) plane because the film thickness is extremely thin. Therefore, an object of the present invention is to obtain a Sendust thin film with high magnetic permeability and low coercive force by forming a highly oriented Sendust thin film with a (022) plane using a chromium thin film as an underlayer.

〔課題を解決するための手段〕[Means to solve the problem]

本発明に係るセンダスト薄膜の成膜方法は、上記課題を
解決するために、基板上にクロム薄膜を成膜し、このク
ロム薄膜の上層にセンダスト薄膜を成膜することを特徴
としている。
In order to solve the above-mentioned problems, the method for forming a Sendust thin film according to the present invention is characterized in that a chromium thin film is formed on a substrate, and a Sendust thin film is formed on top of the chromium thin film.

〔作 用〕[For production]

クロム薄膜は、クロム(Cr)又はクロムを主体とする
合金からなる薄膜である。このクロム薄膜は、スパッタ
リング法等により基板上に成膜される。
The chromium thin film is a thin film made of chromium (Cr) or an alloy mainly composed of chromium. This chromium thin film is formed on the substrate by sputtering or the like.

センダスト薄膜は、Fe−Al−3i又はこれらを主体
とするセンダスト合金からなる薄膜である。このセンダ
スト薄膜は、基板上に成膜したクロム薄膜のさらに上層
にスパッタリング法等により成膜される。
The Sendust thin film is a thin film made of Fe-Al-3i or a Sendust alloy mainly composed of Fe-Al-3i. This sendust thin film is formed by a sputtering method or the like as a layer further above the chromium thin film formed on the substrate.

センダスト薄膜をこのようにクロム薄膜の上層に成膜す
ると、従来と同様の薄い膜厚に形成した場合にも、(0
22)面の高配向センダスト薄膜を得ることができる。
When the sendust thin film is formed on top of the chromium thin film in this way, even when it is formed to the same thin film thickness as the conventional one,
22) A highly oriented sendust thin film can be obtained.

従って、本発明の成膜方法によれば、透磁率が高(、か
つ保磁力の小さなセンダスト薄膜を得ることができる。
Therefore, according to the film forming method of the present invention, it is possible to obtain a sendust thin film with high magnetic permeability (and low coercive force).

〔実施例〕〔Example〕

本発明の一実施例を第1図に基づいて説明すれば、以下
の通りである。
An embodiment of the present invention will be described below based on FIG.

本実施例では、方形板状の試料片上にセンダスト薄膜を
成膜する場合を示す。
In this example, a case is shown in which a sendust thin film is formed on a rectangular plate-shaped sample piece.

まず、方形板状の基板1を準備した。この基板1は、熱
膨張係数が135 X 10− ’ (deg−’ )
の結晶化ガラスを用いる。
First, a rectangular plate-shaped substrate 1 was prepared. This substrate 1 has a thermal expansion coefficient of 135 x 10-'(deg-')
crystallized glass is used.

次に、この基板1の表面にクロム薄膜3を成膜した。ク
ロム薄膜3は、クロム(Cr)をスパッタリング法によ
り基板1上に成膜したものである。また、このクロム薄
膜3の膜厚は、4個の基板lについて、それぞれ50人
、100人、200人及び1 、000人の4種類の厚
さを試した。
Next, a chromium thin film 3 was formed on the surface of this substrate 1. The chromium thin film 3 is formed by depositing chromium (Cr) on the substrate 1 by sputtering. Furthermore, four different thicknesses of 50, 100, 200, and 1,000 thicknesses of the chromium thin film 3 were tested for four substrates 1, respectively.

そして、各基板1上に成膜されたこれらのクロム薄膜3
の上層に、さらにセンダスト薄膜2をそれぞれ成膜した
。これらのセンダスト薄膜2は、Fe−Al−3iのセ
ンダスト合金をスパッタリング法によりクロム薄膜3上
に成膜したものである。また、これらセンダスト薄膜2
の膜厚は、全てIJfmとした。
These chromium thin films 3 formed on each substrate 1
A sendust thin film 2 was further formed on the upper layer of each. These sendust thin films 2 are formed by forming a sendust alloy of Fe-Al-3i on the chromium thin film 3 by sputtering. In addition, these sendust thin films 2
All film thicknesses were IJfm.

最後に、このセンダスト薄膜2を成膜した基板1に窒素
雰囲気中で500℃・3時間保持の熱処理を施した。
Finally, the substrate 1 on which the Sendust thin film 2 was formed was subjected to heat treatment at 500° C. for 3 hours in a nitrogen atmosphere.

上記のようにして成膜されたセンダスト薄膜2の特性を
測定した結果を第1表に示す。
Table 1 shows the results of measuring the characteristics of the Sendust thin film 2 formed as described above.

第1表 この表に示すように、本実施例によるセンダスト薄膜2
の(022)面のX線回折強度を測定すると、クロム薄
膜3の膜厚が50人、100人、200人及びi、oo
o人のいずれの場合にも、従来例に比べ3倍以上であっ
た。このことから、本実施例では、クロム薄膜3を下地
層とすることにより、(022)面の高配向センダスト
薄膜を得ていることが分かる。そして、本実施例による
センダスト薄膜2の周波数IMIIzにおける透磁率は
、従来例の2〜3倍となり、保磁力も約4分の1に減少
していた。
Table 1 As shown in this table, Sendust thin film 2 according to this example
When measuring the X-ray diffraction intensity of the (022) plane of
In all cases, the number of patients was more than three times that of the conventional example. From this, it can be seen that in this example, by using the chromium thin film 3 as the base layer, a highly oriented sendust thin film of the (022) plane was obtained. The magnetic permeability of the Sendust thin film 2 according to this example at the frequency IMIIz was two to three times that of the conventional example, and the coercive force was also reduced to about one-fourth.

このことから、本発明に係るセンダスト薄■りの成膜方
法を薄膜磁気ヘッド等に実施すれば、軟磁性の大幅な改
善を図ることができることは明白である。
From this, it is clear that if the method for forming a thin film of Sendust according to the present invention is applied to a thin film magnetic head or the like, the soft magnetism can be significantly improved.

〔発明の効果〕〔Effect of the invention〕

本発明に係るセンダスト薄膜の成膜方法は、以上のよう
に、基板上にクロム薄膜を成膜し、このクロム薄膜の上
層にセンダスト薄膜を成膜する構成をなしている。
As described above, the method for forming a Sendust thin film according to the present invention has a structure in which a chromium thin film is formed on a substrate, and a Sendust thin film is formed on top of the chromium thin film.

これにより、(022)面の高配向センダスト薄膜を得
ることができる。そして、このセンダスト薄膜は、透磁
率が高(、かつ保磁力の小さなものとなる。
As a result, a highly oriented sendust thin film with a (022) plane can be obtained. This Sendust thin film has high magnetic permeability (and low coercive force).

従って、本発明の成膜方法によれば、センダスト薄膜の
軟磁性を改善することができるという効果を奏する。
Therefore, according to the film forming method of the present invention, it is possible to improve the soft magnetic properties of the Sendust thin film.

【図面の簡単な説明】 第1図は本発明の一実施例を示すものであって、センダ
スト薄膜を成膜した試料片の部分断面斜視図である。第
2図は従来例を示すものであって、センダスト薄膜を成
膜した試料片の部分断面斜視図である。 1は基板、2はセンダスト薄膜、3はクロム薄膜である
。 t 1 ニ
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows an embodiment of the present invention, and is a partial cross-sectional perspective view of a sample piece on which a sendust thin film was formed. FIG. 2 shows a conventional example, and is a partial cross-sectional perspective view of a sample piece on which a Sendust thin film has been formed. 1 is a substrate, 2 is a Sendust thin film, and 3 is a chromium thin film. t 1 d

Claims (1)

【特許請求の範囲】[Claims] 1、基板上にクロム薄膜を成膜し、このクロム薄膜の上
層にセンダスト薄膜を成膜することを特徴とするセンダ
スト薄膜の成膜方法。
1. A method for forming a sendust thin film, which comprises forming a chromium thin film on a substrate, and forming a sendust thin film on top of the chromium thin film.
JP63108382A 1988-04-30 1988-04-30 Method for forming sendust thin film Expired - Lifetime JPH0751743B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63108382A JPH0751743B2 (en) 1988-04-30 1988-04-30 Method for forming sendust thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63108382A JPH0751743B2 (en) 1988-04-30 1988-04-30 Method for forming sendust thin film

Publications (2)

Publication Number Publication Date
JPH01279742A true JPH01279742A (en) 1989-11-10
JPH0751743B2 JPH0751743B2 (en) 1995-06-05

Family

ID=14483355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63108382A Expired - Lifetime JPH0751743B2 (en) 1988-04-30 1988-04-30 Method for forming sendust thin film

Country Status (1)

Country Link
JP (1) JPH0751743B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06111233A (en) * 1992-09-30 1994-04-22 Victor Co Of Japan Ltd Thin film laminated magnetic head
EP0737960A1 (en) * 1995-04-10 1996-10-16 Sharp Kabushiki Kaisha Magnetic thin film for magnetic head, method of manufacturing the same, and magnetic head

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61240434A (en) * 1985-04-18 1986-10-25 Seiko Epson Corp Production of magnetic thin film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61240434A (en) * 1985-04-18 1986-10-25 Seiko Epson Corp Production of magnetic thin film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06111233A (en) * 1992-09-30 1994-04-22 Victor Co Of Japan Ltd Thin film laminated magnetic head
EP0737960A1 (en) * 1995-04-10 1996-10-16 Sharp Kabushiki Kaisha Magnetic thin film for magnetic head, method of manufacturing the same, and magnetic head
US5756201A (en) * 1995-04-10 1998-05-26 Sharp Kabushiki Kaisha Magnetic thin film for magnetic head, method of manufacturing the same, and magnetic head

Also Published As

Publication number Publication date
JPH0751743B2 (en) 1995-06-05

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