JPS62128109A - Manufacture of high-permeability laminating film - Google Patents

Manufacture of high-permeability laminating film

Info

Publication number
JPS62128109A
JPS62128109A JP26726385A JP26726385A JPS62128109A JP S62128109 A JPS62128109 A JP S62128109A JP 26726385 A JP26726385 A JP 26726385A JP 26726385 A JP26726385 A JP 26726385A JP S62128109 A JPS62128109 A JP S62128109A
Authority
JP
Japan
Prior art keywords
magnetic
permeability
magnetic field
film
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP26726385A
Other languages
Japanese (ja)
Other versions
JPH0560641B2 (en
Inventor
Hideo Oura
秀男 大浦
Kunio Yanagi
柳 邦雄
Hiroshi Shimada
寛 島田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Akai Electric Co Ltd
Original Assignee
Akai Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Akai Electric Co Ltd filed Critical Akai Electric Co Ltd
Priority to JP26726385A priority Critical patent/JPS62128109A/en
Publication of JPS62128109A publication Critical patent/JPS62128109A/en
Publication of JPH0560641B2 publication Critical patent/JPH0560641B2/ja
Granted legal-status Critical Current

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  • Magnetic Heads (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Magnetic Films (AREA)
  • Laminated Bodies (AREA)

Abstract

PURPOSE:To improve permeability and frequency characteristics, by impressing a specific amount of static magnetic field parallel to a substrate plane, when amorphous thin films are formed, so that permeability of each amorphous soft magnetic film is improved. CONSTITUTION:When amorphous soft magnetic films are manufactured by a RF sputtering method or the like, a substrate material, an external magnetic field such as earth magnetism, an Ar gas-introduced effect, and the like cause magnetic anisotropy inside film planes. Then, an effect of stress between magnetic films and a substrate can be removed by heat treatment, however, it is hard to remove a magnetic effect fully by only heat treatment. Therefore, a sputtering process is performed by impressing a static magnetic field parallel to the substrate surface when the films are manufactured, to improve several characteristics. The impressed magnetic field less than 3Oe becomes ineffective, and that more than 50Oe has an effect on plasma during sputtering. Thus, the magnetic field of 3Oe to 50Oe becomes desirable. Hence, permeability used in a high frequency device such as a magnetic head can be made large, capable of improving frequency characteristics in a high frequency region.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、磁気ヘッド等の高周波用デバイスに使用され
る高透磁率積層膜の製造方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing a high magnetic permeability laminated film used in high frequency devices such as magnetic heads.

〔従来技術〕[Prior art]

近年、スパッタ法および蒸着法等による非晶質磁性合金
薄膜の作製研究が盛んに行なわれて−る。
In recent years, research has been actively conducted on the production of amorphous magnetic alloy thin films using sputtering methods, vapor deposition methods, and the like.

その中でも、磁歪が小さく飽和磁束密度の大きいco 
−Zr系非晶質合金薄膜は、VTR用磁気ヘッド、垂直
記録用磁気ヘッド、薄膜磁気ヘッド等を形成する材料と
して注目されている(特開昭57−51236 、特開
昭58−27941)。また、上記磁性薄膜の透磁率を
改善するために、回転磁界中で熱処理を行なったり、更
には非晶質磁性薄膜をSi02等の絶縁体より成る中間
層を介して積層し、各磁性層の厚みを薄くすることによ
り渦電流損失を減少させ、高周波領域での透磁率を向上
させた高透磁率積層膜の作製も行われている(特開昭5
8−185742 )。
Among them, co has low magnetostriction and high saturation magnetic flux density.
-Zr-based amorphous alloy thin films are attracting attention as materials for forming magnetic heads for VTRs, magnetic heads for perpendicular recording, thin film magnetic heads, etc. (Japanese Unexamined Patent Publications No. 57-51236 and No. 58-27941). In order to improve the magnetic permeability of the magnetic thin film, heat treatment is performed in a rotating magnetic field, and amorphous magnetic thin films are laminated with an intermediate layer made of an insulator such as Si02 interposed between each magnetic layer. High permeability laminated films are also being produced that reduce eddy current loss and improve magnetic permeability in the high frequency range by reducing the thickness (Japanese Patent Application Laid-Open No.
8-185742).

(発明が解決しようとする問題点) しかしながら、このようにして得られた薄膜の透磁率は
、作製時よりも向上してはいるものの実用土まだ十分で
はなかった。一般に、スパッタ法や蒸着法により作製さ
れた薄膜は、基板と薄膜との間の熱膨張係数の差などに
よる歪が膜面内に残留しており、そのため透磁率が低下
すると言われているが、実際には磁歪がほぼ零の組成の
磁性薄膜においても、熱処理後の透磁率はあまり向上し
ていないのが現状である。この現象が生起する理由は、
作製時に誘起された磁気異方性が熱処理後もまだ残って
いるためと考えられる。また、この膜の膜面内に残留し
ている異方性は一軸磁気異方性であるので、垂直記録用
磁気ヘッドの主磁極膜としては適しているが、たとえば
VTR用磁気ヘッド等のリング型ヘッドに用いる磁性薄
膜としては不適当である。
(Problems to be Solved by the Invention) However, although the magnetic permeability of the thin film thus obtained was improved from that at the time of production, it was still insufficient for practical use. In general, it is said that in thin films produced by sputtering or vapor deposition, strain remains in the film plane due to differences in thermal expansion coefficients between the substrate and the thin film, and as a result, magnetic permeability decreases. In reality, even in magnetic thin films whose composition has almost zero magnetostriction, the magnetic permeability after heat treatment does not improve much. The reason why this phenomenon occurs is
This is thought to be because the magnetic anisotropy induced during fabrication still remains after heat treatment. In addition, since the anisotropy remaining in the film plane of this film is uniaxial magnetic anisotropy, it is suitable as a main pole film of a magnetic head for perpendicular recording. It is unsuitable as a magnetic thin film for use in mold heads.

また、上記積層膜においても各磁性層の透磁率の周波数
特性は改善されてはいるが、この場合も膜面内に一軸磁
気異方性が存在するだけでなく、膜厚が薄いだめ透磁率
の絶対値は低下しているので、各磁性層の透磁率を向上
させなければ、実用上優れた高透磁率積層膜を得ること
は困難であつた。
In addition, although the frequency characteristics of the magnetic permeability of each magnetic layer in the laminated film described above have been improved, in this case as well, not only does uniaxial magnetic anisotropy exist within the film plane, but also the magnetic permeability is reduced due to the thin film thickness. Since the absolute value of is decreasing, it has been difficult to obtain a practically excellent high permeability laminated film unless the magnetic permeability of each magnetic layer is improved.

(問題点を解決するための手段) 本発明は、上記従来の問題点を解決し、高透磁率ならび
に高周波領域における透磁率特性を改善した高透磁率積
層膜の製造方法を提供することを目的とするものであり
、特許請求の範囲記載の方法を提供することによって、
前記目的を達成することができる。すなわち本発明は、
スパッタ法を用いて、非磁性体、磁性体のいずれか少な
くとも1種からなる基板上に非晶質軟磁性薄膜を、非磁
性体より成る中間層を介して、積層して形成される高透
磁率積層膜の製造方法において、前記非晶質薄膜の形成
時に上記基板面に平行な30e以上5000以下の静磁
界を印加して各非晶質軟磁性膜の透磁率を向上させるこ
とにより透磁率が高くかつ周波数特性の改善された高透
磁率積層膜の製造方法に関し、更に、印加する静磁界の
方向を非晶質軟磁性薄膜の各層毎に変化させることによ
り高周波特性にも優れ、かつ等方的な高透磁率積層膜の
製造方法に関するものである。
(Means for Solving the Problems) An object of the present invention is to solve the above-mentioned conventional problems and provide a method for manufacturing a high magnetic permeability laminated film that improves high magnetic permeability and magnetic permeability characteristics in a high frequency region. By providing the method described in the claims,
The above objective can be achieved. That is, the present invention
A highly permeable film formed by laminating an amorphous soft magnetic thin film on a substrate made of at least one of a nonmagnetic material and a magnetic material with an intermediate layer made of a nonmagnetic material interposed therebetween using a sputtering method. In the method for manufacturing a magnetic laminated film, when forming the amorphous thin film, a static magnetic field of 30e or more and 5000 or less parallel to the substrate surface is applied to improve the magnetic permeability of each amorphous soft magnetic film. This invention relates to a method for manufacturing a high permeability laminated film with high magnetic permeability and improved frequency characteristics, and furthermore, by changing the direction of the applied static magnetic field for each layer of the amorphous soft magnetic thin film, the method has excellent high frequency characteristics and the like. The present invention relates to a method for manufacturing a multilayer film with high magnetic permeability.

次に本発明を実験データについて説明する。Next, the present invention will be explained using experimental data.

非晶質軟磁性膜をRFスパッタ法により作製する場合、
基板材質、地磁気などの外部磁界、Arガスの取り込み
の影響などにより膜面内に磁気異方性が誘起されること
は一般によく知られている。
When producing an amorphous soft magnetic film by RF sputtering,
It is generally well known that magnetic anisotropy is induced in the film plane due to the influence of the substrate material, external magnetic field such as terrestrial magnetism, and the incorporation of Ar gas.

このなかで磁性膜と基板間の応力による影響は熱処理に
よって取り除くことができるが、磁気的な影響は熱処理
のみによって十分には取り除くことは難かしいことを本
発明者らは確認した。
Among these, the present inventors have confirmed that although the influence of stress between the magnetic film and the substrate can be removed by heat treatment, it is difficult to sufficiently eliminate the magnetic influence only by heat treatment.

そこで本発明者らはまず、膜作製時において基板面に平
行に静磁界を印加してスパッタリングを行ない、印加磁
界の方向を磁化容易軸とする一軸磁気異方性を有する膜
を作製しその緒特性について検討した。
Therefore, the present inventors first performed sputtering by applying a static magnetic field parallel to the substrate surface during film fabrication, and fabricated a film with uniaxial magnetic anisotropy with the direction of the applied magnetic field as the axis of easy magnetization. We examined the characteristics.

第1図(a)は、RFスパッタ法によりガラス基板上に
作製した磁歪がほぼ零の組成である0O8sNb12Z
rs非晶質磁性薄膜におけるI MHzでの透磁率と印
加磁界方向との関係を示す図であり、同図(b)は試料
に対する磁化容易軸の方向と透磁率測定方向との関係を
示す図である。ここで、薄膜作製中に印加した静磁界の
大きさは約600S また上記薄膜の膜厚は0.6μm
である。
Figure 1(a) shows 0O8sNb12Z, which has a composition of almost zero magnetostriction, fabricated on a glass substrate by RF sputtering.
FIG. 3 is a diagram showing the relationship between the magnetic permeability at I MHz and the direction of the applied magnetic field in an rs amorphous magnetic thin film, and FIG. It is. Here, the magnitude of the static magnetic field applied during thin film fabrication was approximately 600 S, and the thickness of the above thin film was 0.6 μm.
It is.

同図かられかるように、上記非晶質薄膜にあっては膜面
内の異方性が大きく、透磁率の値は磁化困難軸方向が大
きい一軸異方性を有している。
As can be seen from the figure, the amorphous thin film has a large in-plane anisotropy, and the magnetic permeability has a uniaxial anisotropy with a large value in the direction of the hard axis of magnetization.

第2図中の実線は、該薄膜の磁化困難軸方向の透磁率の
周波数依存性を示し、また、比較のため上記薄膜と同一
組成でスパッタ中に磁界を加えないで作製した非晶質薄
膜の透磁率についても同図中に点線によって示した。但
し、いずれの場合も作製後、回転磁界中熱処理を施した
後に透磁率を測定した。同図かられかるように磁歪が零
付近の磁性薄膜においては、作製時の印加磁界を60e
とした場合にはμ、 = 10000 (at 10 
kHz )と透磁率が向キしており、またI MHzに
おいてもμm=8500と高周波領域においても高い値
が得られた。
The solid line in Figure 2 shows the frequency dependence of the magnetic permeability in the direction of the hard axis of magnetization of the thin film, and for comparison, an amorphous thin film was prepared with the same composition as the above thin film without applying a magnetic field during sputtering. The magnetic permeability is also indicated by a dotted line in the figure. However, in each case, after fabrication, the magnetic permeability was measured after heat treatment in a rotating magnetic field. As can be seen from the figure, for magnetic thin films with magnetostriction near zero, the applied magnetic field during fabrication is 60e.
In this case, μ, = 10000 (at 10
kHz), and a high value was obtained in the high frequency range of μm=8500 at I MHz as well.

ここで、非晶質薄膜の作製時における印加磁界は30e
未満であれば効果はなく、また5 00eより大きい場
合にはスパッタ中にプラズマに影響を及ぼすので、30
e以上500e以下にする必要がある。
Here, the applied magnetic field during the production of the amorphous thin film was 30e
If it is less than 300e, there will be no effect, and if it is more than 500e, it will affect the plasma during sputtering.
It is necessary to set the value to be between e and 500e.

〔実施例〕〔Example〕

次に本発明者・らは、上記組成の非晶質磁性薄膜を0.
2μm、中間層として5i02を701の厚さに交互に
10層ずつ積層して成る高透磁率積層膜を作製した。
Next, the present inventors et al. deposited an amorphous magnetic thin film having the above composition at 0.00%.
A high magnetic permeability laminated film was prepared by alternately laminating 10 layers of 5i02 with a thickness of 2 μm and an intermediate layer of 701 mm.

本実施例では、等方的な磁性膜を作製するため、第3図
(a) 、 (b)に示すように各磁性層毎に印加磁界
の方向を変化させ、同図(a)に示すように磁界の方向
が膜の上面からみて18°ずつずれた10方向を向くよ
うにして変化させてスパッタリングを行なった。ここで
印加磁界の大きさは60e、作製した膜の厚さは約2μ
mであった。なお同図(b)は同図(mlの断面を示す
図である。
In this example, in order to fabricate an isotropic magnetic film, the direction of the applied magnetic field was changed for each magnetic layer as shown in FIGS. 3(a) and 3(b). Sputtering was performed by changing the direction of the magnetic field so that it was directed in 10 directions shifted by 18 degrees when viewed from the top surface of the film. Here, the magnitude of the applied magnetic field is 60e, and the thickness of the produced film is approximately 2μ.
It was m. Note that FIG. 3B is a diagram showing a cross section of the same figure (ml).

第4図(a)は、上記積層膜の透磁率の面内各方向にお
ける分散を示した図であり、同図(b)は透磁率が最大
、すなわちμr (max)方向と透磁率測定方向との
関係を示す図である。同図(a)かられかるように、こ
の高透磁率積層膜においては、非晶質薄膜の各層毎の磁
化容易軸方向が異なるため第1図(a)に示したQoN
bZr単層膜に比較して著しく等方的になっていること
がわかる。
FIG. 4(a) is a diagram showing the dispersion of the magnetic permeability of the laminated film in each in-plane direction, and FIG. FIG. As can be seen from Figure 1(a), in this high permeability multilayer film, the easy axis direction of magnetization differs for each layer of the amorphous thin film, so the QoN shown in Figure 1(a)
It can be seen that it is significantly more isotropic than the bZr single layer film.

また第5図中の実線は、上記積層膜の透磁率の周波数依
存性を示したもので、同図の点線で示した同一組成の単
層膜(作製時に印加磁界なし、膜厚0.6μm)の透磁
率特性と比べて透磁率も高く、またI MHz以上の高
周波特性においてもはるかに優れていることがわかる。
The solid line in Figure 5 shows the frequency dependence of the magnetic permeability of the laminated film. It can be seen that the magnetic permeability is higher than that of ), and the high frequency characteristics of I MHz or higher are also far superior.

(発明の効果) 以上述べたように本発明によれば、磁気ヘッド等の高周
波用デバイスに使用される透磁率が高くかつ高周波領域
における周波数特性が大きく改善された高透磁率積層膜
を作製することが出来る。
(Effects of the Invention) As described above, according to the present invention, a high magnetic permeability laminated film that is used in high frequency devices such as magnetic heads and has high magnetic permeability and greatly improved frequency characteristics in the high frequency region can be manufactured. I can do it.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)は静磁界中でスパッタリングを行なって作
製した0oNbZr非晶質磁性薄膜の膜面内の各方向に
おける透磁率の分散を示す図、同図(b)は試料に対す
る磁化容易軸方向と透磁率測定方向との関係を示す図、
第2図は上記薄膜の透磁率の周波数依存性を示す図、第
3図(a)はC1oNbZr −SiO2積層膜の作製
時における各磁性層の印加磁界の方向を示す図、同図(
b)は同図(a)の断面を示す図、第4図(a)は積層
膜の膜面内の各方向における透磁率の分散を示す図、同
図(b)は透磁率が最大すなわちμr(max)の方向
と透磁率測定方向との関係を示す図、第5図は上記積層
膜の透磁率の周波数依存性を示す図である。
Figure 1 (a) shows the dispersion of magnetic permeability in each direction within the film plane of a 0oNbZr amorphous magnetic thin film fabricated by sputtering in a static magnetic field, and Figure 1 (b) shows the easy axis of magnetization for the sample. A diagram showing the relationship between the direction and the permeability measurement direction,
FIG. 2 is a diagram showing the frequency dependence of the magnetic permeability of the thin film, FIG.
Figure 4 (b) is a diagram showing the cross section of Figure 4 (a), Figure 4 (a) is a diagram showing the dispersion of magnetic permeability in each direction within the film plane of the laminated film, and Figure 4 (b) is a diagram showing the distribution of magnetic permeability in each direction within the film plane of the laminated film. FIG. 5 is a diagram showing the relationship between the direction of μr (max) and the magnetic permeability measurement direction, and FIG. 5 is a diagram showing the frequency dependence of the magnetic permeability of the laminated film.

Claims (1)

【特許請求の範囲】 1、非磁性体、磁性体のいずれか少なくとも1種から成
る基板上に、スパッタ法により非晶質軟磁性薄膜を、非
磁性体より成る中間層を介して、積層して形成される高
透磁率積層膜の製造方法において、前記非晶質薄膜の形
成時に上記基板面に平行な3エルステッド以上50エル
ステッド以下の静磁界を印加して製造することを特徴と
する高透磁率積層膜の製造方法。 2、印加される前記静磁界の方向を、非晶質軟磁性薄膜
の各層毎に変化させることを特徴とする特許請求の範囲
第1項記載の高透磁率積層膜の製造方法。
[Claims] 1. An amorphous soft magnetic thin film is laminated by sputtering on a substrate made of at least one of a nonmagnetic material and a magnetic material, with an intermediate layer made of a nonmagnetic material interposed therebetween. A method for manufacturing a high permeability laminated film formed by applying a static magnetic field of 3 Oe or more and 50 Oe or less parallel to the substrate surface when forming the amorphous thin film. A method for manufacturing a magnetic laminated film. 2. The method of manufacturing a high magnetic permeability laminated film according to claim 1, wherein the direction of the applied static magnetic field is changed for each layer of the amorphous soft magnetic thin film.
JP26726385A 1985-11-29 1985-11-29 Manufacture of high-permeability laminating film Granted JPS62128109A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26726385A JPS62128109A (en) 1985-11-29 1985-11-29 Manufacture of high-permeability laminating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26726385A JPS62128109A (en) 1985-11-29 1985-11-29 Manufacture of high-permeability laminating film

Publications (2)

Publication Number Publication Date
JPS62128109A true JPS62128109A (en) 1987-06-10
JPH0560641B2 JPH0560641B2 (en) 1993-09-02

Family

ID=17442412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26726385A Granted JPS62128109A (en) 1985-11-29 1985-11-29 Manufacture of high-permeability laminating film

Country Status (1)

Country Link
JP (1) JPS62128109A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0547555A (en) * 1991-08-19 1993-02-26 Amorphous Denshi Device Kenkyusho:Kk Amorphous soft magnetic thin film and manufacture thereof
JPH0722235A (en) * 1991-08-14 1995-01-24 Internatl Business Mach Corp <Ibm> Thin film and magnetic head of multilayer ferromagnetic material using common material

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5410997A (en) * 1977-06-24 1979-01-26 Ibm Magnetic thin film structure
JPS58185742A (en) * 1982-04-21 1983-10-29 Showa Denko Kk Amorphous magnetic alloy magnetic material
JPS5921008A (en) * 1983-02-18 1984-02-02 Sumitomo Special Metals Co Ltd Composite substrate
JPS59126776A (en) * 1982-12-28 1984-07-21 Fujitsu Ltd Sputtering method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5410997A (en) * 1977-06-24 1979-01-26 Ibm Magnetic thin film structure
JPS58185742A (en) * 1982-04-21 1983-10-29 Showa Denko Kk Amorphous magnetic alloy magnetic material
JPS59126776A (en) * 1982-12-28 1984-07-21 Fujitsu Ltd Sputtering method
JPS5921008A (en) * 1983-02-18 1984-02-02 Sumitomo Special Metals Co Ltd Composite substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722235A (en) * 1991-08-14 1995-01-24 Internatl Business Mach Corp <Ibm> Thin film and magnetic head of multilayer ferromagnetic material using common material
JPH0547555A (en) * 1991-08-19 1993-02-26 Amorphous Denshi Device Kenkyusho:Kk Amorphous soft magnetic thin film and manufacture thereof

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