JPH0126193B2 - - Google Patents

Info

Publication number
JPH0126193B2
JPH0126193B2 JP6210285A JP6210285A JPH0126193B2 JP H0126193 B2 JPH0126193 B2 JP H0126193B2 JP 6210285 A JP6210285 A JP 6210285A JP 6210285 A JP6210285 A JP 6210285A JP H0126193 B2 JPH0126193 B2 JP H0126193B2
Authority
JP
Japan
Prior art keywords
image information
memory cell
gate electrode
floating gate
storage device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6210285A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61222262A (ja
Inventor
Toshiro Usami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP60062102A priority Critical patent/JPS61222262A/ja
Priority to US06/842,193 priority patent/US4893273A/en
Publication of JPS61222262A publication Critical patent/JPS61222262A/ja
Publication of JPH0126193B2 publication Critical patent/JPH0126193B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/005—Arrangements for writing information into, or reading information out from, a digital store with combined beam-and individual cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/005—Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Read Only Memory (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP60062102A 1985-03-28 1985-03-28 半導体画像記憶装置 Granted JPS61222262A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60062102A JPS61222262A (ja) 1985-03-28 1985-03-28 半導体画像記憶装置
US06/842,193 US4893273A (en) 1985-03-28 1986-03-21 Semiconductor memory device for storing image data

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60062102A JPS61222262A (ja) 1985-03-28 1985-03-28 半導体画像記憶装置

Publications (2)

Publication Number Publication Date
JPS61222262A JPS61222262A (ja) 1986-10-02
JPH0126193B2 true JPH0126193B2 (enExample) 1989-05-22

Family

ID=13190346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60062102A Granted JPS61222262A (ja) 1985-03-28 1985-03-28 半導体画像記憶装置

Country Status (2)

Country Link
US (1) US4893273A (enExample)
JP (1) JPS61222262A (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO933103L (no) * 1993-08-31 1995-03-01 Tor Sverre Lande Analog, UV-lysprogrammerbar spenningsreferanse i CMOS-teknologi
US5557114A (en) * 1995-01-12 1996-09-17 International Business Machines Corporation Optical fet
JP2980012B2 (ja) * 1995-10-16 1999-11-22 日本電気株式会社 不揮発性半導体記憶装置
JP2905739B2 (ja) * 1996-04-24 1999-06-14 株式会社エイ・ティ・アール光電波通信研究所 全光型半導体画像記憶装置とその画像記憶及び消去方法、及び全光型半導体論理演算装置とその論理演算方法
US5852306A (en) * 1997-01-29 1998-12-22 Micron Technology, Inc. Flash memory with nanocrystalline silicon film floating gate
US6794255B1 (en) 1997-07-29 2004-09-21 Micron Technology, Inc. Carburized silicon gate insulators for integrated circuits
US6746893B1 (en) 1997-07-29 2004-06-08 Micron Technology, Inc. Transistor with variable electron affinity gate and methods of fabrication and use
US7196929B1 (en) * 1997-07-29 2007-03-27 Micron Technology Inc Method for operating a memory device having an amorphous silicon carbide gate insulator
US6936849B1 (en) 1997-07-29 2005-08-30 Micron Technology, Inc. Silicon carbide gate transistor
US5886368A (en) 1997-07-29 1999-03-23 Micron Technology, Inc. Transistor with silicon oxycarbide gate and methods of fabrication and use
US6031263A (en) 1997-07-29 2000-02-29 Micron Technology, Inc. DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate
US5926740A (en) * 1997-10-27 1999-07-20 Micron Technology, Inc. Graded anti-reflective coating for IC lithography
US6965123B1 (en) 1997-07-29 2005-11-15 Micron Technology, Inc. Transistor with variable electron affinity gate and methods of fabrication and use
US7154153B1 (en) 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device
US6121126A (en) * 1998-02-25 2000-09-19 Micron Technologies, Inc. Methods and structures for metal interconnections in integrated circuits
US6143655A (en) 1998-02-25 2000-11-07 Micron Technology, Inc. Methods and structures for silver interconnections in integrated circuits
US6492694B2 (en) 1998-02-27 2002-12-10 Micron Technology, Inc. Highly conductive composite polysilicon gate for CMOS integrated circuits
US6815303B2 (en) * 1998-04-29 2004-11-09 Micron Technology, Inc. Bipolar transistors with low-resistance emitter contacts
JP2001085660A (ja) 1999-09-10 2001-03-30 Toshiba Corp 固体撮像装置及びその制御方法
US7033898B1 (en) * 2002-08-13 2006-04-25 Newport Fab, Llc Method for fabricating a self-aligned bipolar transistor having recessed spacers
JP4183464B2 (ja) 2002-09-20 2008-11-19 富士フイルム株式会社 固体撮像装置とその駆動方法
TWI377577B (en) * 2007-06-29 2012-11-21 Novatek Microelectronics Corp Method for memory address arrangement
JP5939703B2 (ja) * 2009-02-18 2016-06-22 ナンジン ユニバーシティ 複合誘電体ゲートｍｏｓｆｅｔ構造を有す感光検出器およびその信号読み取り方法
US8653618B2 (en) * 2011-09-02 2014-02-18 Hoon Kim Unit pixel of color image sensor and photo detector thereof
US10509169B2 (en) * 2017-10-30 2019-12-17 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method of the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5036087A (enExample) * 1973-07-13 1975-04-04
DE2912859A1 (de) * 1979-03-30 1980-10-09 Siemens Ag Ig-fet mit schwebendem speichergate und mit steuergate
US4366555A (en) * 1980-08-01 1982-12-28 National Semiconductor Corporation Electrically erasable programmable read only memory
US4665503A (en) * 1985-01-15 1987-05-12 Massachusetts Institute Of Technology Non-volatile memory devices
US4754320A (en) * 1985-02-25 1988-06-28 Kabushiki Kaisha Toshiba EEPROM with sidewall control gate

Also Published As

Publication number Publication date
US4893273A (en) 1990-01-09
JPS61222262A (ja) 1986-10-02

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