JPH0126115Y2 - - Google Patents
Info
- Publication number
- JPH0126115Y2 JPH0126115Y2 JP1983112509U JP11250983U JPH0126115Y2 JP H0126115 Y2 JPH0126115 Y2 JP H0126115Y2 JP 1983112509 U JP1983112509 U JP 1983112509U JP 11250983 U JP11250983 U JP 11250983U JP H0126115 Y2 JPH0126115 Y2 JP H0126115Y2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- znse
- gaas
- substrate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 25
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1983112509U JPS6020160U (ja) | 1983-07-20 | 1983-07-20 | ZnSeモノリシツク型発光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1983112509U JPS6020160U (ja) | 1983-07-20 | 1983-07-20 | ZnSeモノリシツク型発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6020160U JPS6020160U (ja) | 1985-02-12 |
JPH0126115Y2 true JPH0126115Y2 (enrdf_load_stackoverflow) | 1989-08-04 |
Family
ID=30260795
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1983112509U Granted JPS6020160U (ja) | 1983-07-20 | 1983-07-20 | ZnSeモノリシツク型発光装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6020160U (enrdf_load_stackoverflow) |
-
1983
- 1983-07-20 JP JP1983112509U patent/JPS6020160U/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6020160U (ja) | 1985-02-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0278280A (ja) | 半導体発光装置 | |
JP2716693B2 (ja) | 半導体レーザー | |
JPS609356B2 (ja) | 半導体発光装置の製法 | |
JP3053357B2 (ja) | 平面埋込型レーザダイオードの製造方法 | |
JPH0126115Y2 (enrdf_load_stackoverflow) | ||
US4599787A (en) | Method of manufacturing a light emitting semiconductor device | |
JPH0797693B2 (ja) | 化合物半導体装置及びその製造方法 | |
JP2771587B2 (ja) | 半導体レーザの製造方法 | |
JPS6144485A (ja) | 半導体レ−ザ装置およびその製造方法 | |
JP3652134B2 (ja) | 発光素子アレイ | |
JP4587515B2 (ja) | 半導体発光装置の製造方法 | |
JP4436527B2 (ja) | 半導体発光装置 | |
JP2002009331A (ja) | 発光ダイオードアレイ | |
JPH084180B2 (ja) | 半導体レ−ザ装置およびその製造方法 | |
JP2827605B2 (ja) | 半導体レーザ装置 | |
JPH06112592A (ja) | 半導体レーザ素子の製造方法 | |
JP2817515B2 (ja) | 半導体レーザ装置およびその製造方法 | |
JP3450992B2 (ja) | 半導体発光装置 | |
JPH0194690A (ja) | 埋め込み型半導体レーザ素子の製造方法 | |
JP2002043616A (ja) | 光プリンタ用ledアレイ | |
JPS60126880A (ja) | 半導体レ−ザ装置 | |
JPH04305991A (ja) | 半導体レーザ素子 | |
JPH11340584A (ja) | エッジ型青色発光レ―ザ | |
JPH0358191B2 (enrdf_load_stackoverflow) | ||
JPH05167187A (ja) | 半導体レーザ |