JPH0126115Y2 - - Google Patents

Description

[Detailed description of the invention] (a) Industrial application field The present invention relates to a ZnSe monolithic light emitting device.

(b) Prior art Figures 1 and 2 show a conventional device of this type.
1 is an n-type GaAs substrate, 2 is an n-type ZnSe layer stacked on the substrate, and 3 is a SiO ₂ layer stacked on the ZnSe layer.
4 is a metal layer made of gold (Au) formed on the insulating layer, and the metal layer is made up of a plurality of striped layers 4' extending in one direction. 5
is an electrode formed on the back surface of the substrate 1, and the electrode is formed of a plurality of striped electrodes 5' extending in a direction perpendicular to the metal layer 4.

In such a device, for example, even if a forward bias is applied between the layer and the electrode in order to cause only the intersection A of the striped layer and the stripe electrode in FIG. 2 to emit light, not only the intersection A but also other parts There was a problem that the camera would emit light.

(c) Purpose of the invention This invention was made in view of the above problems.
The present invention aims to provide a ZnSe monolithic light emitting device that emits light only at the intersections by applying a bias between electrodes arranged perpendicularly to each other.

(d) Structure of the invention When the inventor investigated the problems with the conventional device, it was found that the current spread on the substrate 1 was large, and as shown by the arrow a in FIG. It turned out that this was due to the formation of a passageway.

This invention was made based on such knowledge,
Its features include a semi-insulating GaAs substrate, a plurality of striped nanometers stacked on the substrate and extending in one direction.
type GaAs layer, an n-type ZnSe layer laminated on the substrate and the GaAs layer, an insulating layer laminated on the ZnSe layer, laminated on the insulating layer and extending in a direction perpendicular to the n-type GaAs layer. It consists of a plurality of striped metal layers.

(E) Embodiment FIGS. 3A to 3C show an embodiment of the present invention, FIG. 3A is a sectional view taken along line A-A' in FIG. 3B, and FIG. It is a sectional view taken along the line BB' in Figure A.

In the figure, 11 is semi-insulating with a resistivity of 10 ⁷ cm or more.
A GaAs substrate 12 is formed on the substrate and FIG.
Stripe-shaped n-type extending perpendicular to the inside paper surface
This layer is a GaAs layer, which can be formed on the entire surface of the substrate 11 by a well-known etching technique after being grown by a liquid phase epitaxial growth method or the like. Also, the carrier concentration in such a layer is approximately 10 ¹⁹ /cm ³ .

13 is an n-type ZnSe layer stacked on the surface of the substrate 11 and a portion of the GaAs layer 12;
The n-type ZnSe layer was determined by photoluminescence measurement.
It has a sharp emission peak near 466 nm. Such an n-type ZnSe layer 13 is obtained by a well-known molecular beam epitaxial growth method.

14 is laminated on the ZnSe layer 13, for example.
It is an insulating layer made of SiO ₂ (silicon dioxide), and the insulating layer is as thin as 50 Å directly above the GaAs layer 12.
The thickness of the other parts is 300Å.
A groove portion is formed along the GaAs layer 12. The above-mentioned groove is formed by, for example, the sputtering method.
After forming a uniform SiO ₂ film with a thickness of 300 Å on the ZnSe layer 13, it is partially etched along the GaAs layer.
Can be formed by removing _SiO2 .

15 is a striped metal layer formed on the insulating layer 14 and extending in a direction perpendicular to the paper plane in FIG. 3B, that is, in a direction orthogonal to the GaAs layer 12;
The metal layer is made of, for example, Au (gold) and has a thickness of approximately
It is 200Å.

16 is the ZnSe layer 13 that is not laminated.
This is an electrode formed on the GaAs layer 12, and the electrode is made of an Au-Ge (germanium)-Ni (nickel) alloy.

In such a device, when a forward bias is applied between the electrode and the striped metal layer, current flows as indicated by the arrows in FIGS. 3A and 3B. That is, stripe metal layer→insulating layer 14→ZnSe layer 13
→GaAs layer 12→electrode, and in the ZnSe layer 13, it is concentrated in the region R shown by diagonal lines in the figure, where the GaAs stripe layer on which the electrode is formed intersects with the stripe metal layer, and therefore only this region is selective. can emit blue light.

This is because the GaAs layer 12 has higher conductivity than the ZnSe layer 13, the GaAs layer 12 substantially acts as an electrode for the ZnSe layer 13, and the distance between the GaAs layer 12 and the metal layer 15 is This is thought to be because the distance between the metal layer 4 and the electrode 15 is narrower than in the conventional case, so current diffusion as in the conventional case does not occur.

In the device of this embodiment, white light can also be emitted from region R by applying a reverse bias between the metal layer and the electrode.

(f) Effects of the invention According to the invention, good optical isolation can be achieved.
A ZnSe monolithic light emitting device is obtained, and in such a device, the positive and negative electrodes can be taken out from one main surface side of the substrate, which has a great practical effect.

[Brief explanation of the drawing]

1 and 2 are a sectional view and a plan view showing a conventional example, and FIGS. 3A to 3C show an embodiment of the present invention,
Figure A is a sectional view taken along the line A-A' in Figure B, Figure B is a sectional view taken along the line B-B in Figure A, and Figure C is a plan view. 11...Semi-insulating GaAs substrate, 12...n type
GaAs layer, 13... n-type ZnSe layer, 14... insulating layer, 15... metal layer.

Claims (1)

[Claims for Utility Model Registration] (1) A semi-insulating GaAs substrate, a plurality of striped n-type layers stacked on the substrate and extending in one direction.
a GaAs layer, an n-type ZnSe layer laminated on the substrate and the GaAs layer, an insulating layer laminated on the ZnSe layer, a plurality of layers laminated on the insulating layer and extending in a direction perpendicular to the n-type GaAs layer. A ZnSe monolithic light emitting device characterized by consisting of a striped metal layer. (2) Utility Model Registration Claim 1: The ZnSe monolithic light emitting device according to claim 1, wherein a groove is formed in the insulating layer along the GaAs layer.