JPH0122727B2 - - Google Patents
Info
- Publication number
- JPH0122727B2 JPH0122727B2 JP10125277A JP10125277A JPH0122727B2 JP H0122727 B2 JPH0122727 B2 JP H0122727B2 JP 10125277 A JP10125277 A JP 10125277A JP 10125277 A JP10125277 A JP 10125277A JP H0122727 B2 JPH0122727 B2 JP H0122727B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- etching
- silicon
- silane coupling
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 11
- 230000008878 coupling Effects 0.000 claims description 11
- 238000010168 coupling process Methods 0.000 claims description 11
- 238000005859 coupling reaction Methods 0.000 claims description 11
- 229910000077 silane Inorganic materials 0.000 claims description 11
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 18
- 238000001259 photo etching Methods 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 229960002050 hydrofluoric acid Drugs 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Weting (AREA)
- Formation Of Insulating Films (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10125277A JPS5434769A (en) | 1977-08-24 | 1977-08-24 | Photoetching method for silicon semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10125277A JPS5434769A (en) | 1977-08-24 | 1977-08-24 | Photoetching method for silicon semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5434769A JPS5434769A (en) | 1979-03-14 |
| JPH0122727B2 true JPH0122727B2 (zh) | 1989-04-27 |
Family
ID=14295714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10125277A Granted JPS5434769A (en) | 1977-08-24 | 1977-08-24 | Photoetching method for silicon semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5434769A (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53116025U (zh) * | 1977-02-24 | 1978-09-14 | ||
| JPS5649526A (en) * | 1979-09-29 | 1981-05-06 | Toshiba Corp | Manufacture of semiconductor device |
| US7316844B2 (en) * | 2004-01-16 | 2008-01-08 | Brewer Science Inc. | Spin-on protective coatings for wet-etch processing of microelectronic substrates |
-
1977
- 1977-08-24 JP JP10125277A patent/JPS5434769A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5434769A (en) | 1979-03-14 |
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