JPH0121872B2 - - Google Patents

Info

Publication number
JPH0121872B2
JPH0121872B2 JP60158325A JP15832585A JPH0121872B2 JP H0121872 B2 JPH0121872 B2 JP H0121872B2 JP 60158325 A JP60158325 A JP 60158325A JP 15832585 A JP15832585 A JP 15832585A JP H0121872 B2 JPH0121872 B2 JP H0121872B2
Authority
JP
Japan
Prior art keywords
exhaust system
reaction
deposited film
reaction tank
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60158325A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6220875A (ja
Inventor
Minoru Kato
Shigehira Iida
Teruo Misumi
Takahisa Kawamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP60158325A priority Critical patent/JPS6220875A/ja
Publication of JPS6220875A publication Critical patent/JPS6220875A/ja
Publication of JPH0121872B2 publication Critical patent/JPH0121872B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5093Coaxial electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
JP60158325A 1985-07-19 1985-07-19 堆積膜形成装置 Granted JPS6220875A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60158325A JPS6220875A (ja) 1985-07-19 1985-07-19 堆積膜形成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60158325A JPS6220875A (ja) 1985-07-19 1985-07-19 堆積膜形成装置

Publications (2)

Publication Number Publication Date
JPS6220875A JPS6220875A (ja) 1987-01-29
JPH0121872B2 true JPH0121872B2 (enrdf_load_stackoverflow) 1989-04-24

Family

ID=15669171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60158325A Granted JPS6220875A (ja) 1985-07-19 1985-07-19 堆積膜形成装置

Country Status (1)

Country Link
JP (1) JPS6220875A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2577562B2 (ja) * 1987-05-26 1997-02-05 京セラ株式会社 グロ−放電分解装置
USRE36328E (en) * 1988-03-31 1999-10-05 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus including temperature control mechanism
JPH0642474B2 (ja) * 1988-03-31 1994-06-01 株式会社東芝 半導体製造装置
JP2525284B2 (ja) * 1990-10-22 1996-08-14 ティーディーケイ株式会社 クリ―ン搬送方法及び装置
JP2980667B2 (ja) * 1990-10-26 1999-11-22 富士通株式会社 反応処理装置
US20100159122A1 (en) * 2008-12-19 2010-06-24 Canon Kabushiki Kaisha Deposition film forming apparatus, deposition film forming method and electrophotographic photosensitive member manufacturing method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58181862A (ja) * 1982-04-19 1983-10-24 Nec Corp 排ガス処理方法
JPS5950165A (ja) * 1982-09-16 1984-03-23 Sony Corp 減圧反応装置
JPS5970761A (ja) * 1982-10-18 1984-04-21 Toshiba Corp 膜形成装置
JPS59118877A (ja) * 1982-12-25 1984-07-09 Fujitsu Ltd プラズマcvd装置

Also Published As

Publication number Publication date
JPS6220875A (ja) 1987-01-29

Similar Documents

Publication Publication Date Title
US4576698A (en) Plasma etch cleaning in low pressure chemical vapor deposition systems
US5232508A (en) Gaseous phase chemical treatment reactor
US4995341A (en) Microwave plasma CVD apparatus for the formation of a large-area functional deposited film
KR100235362B1 (ko) 플라즈마 화학 기상 성장법에 의해 비결정 탄소 박막을 형성하기 위한 방법 및 장치(Method and apparatus for forming amorphous carbon thin film by plasma chemical vapor deposition)
JPS60114570A (ja) プラズマcvd装置の排気系
EP0221906A1 (en) $i(IN-SITU) CVD CHAMBER CLEANER
JPS6389670A (ja) マイクロ波プラズマcvd法による機能性堆積膜形成装置
US4972799A (en) Microwave plasma chemical vapor deposition apparatus for mass-producing functional deposited films
JPH0121872B2 (enrdf_load_stackoverflow)
JPH02185977A (ja) 膜形成用真空装置
JPH06252066A (ja) 半導体製造装置と半導体装置の製造方法
JPS6323827B2 (enrdf_load_stackoverflow)
JP2807674B2 (ja) 処理装置および処理装置のクリーニング方法
JPS6128371B2 (enrdf_load_stackoverflow)
JPS5931977B2 (ja) プラズマcvd装置
JP2870774B2 (ja) 単結晶膜の形成方法
JP2907404B2 (ja) 堆積膜形成装置
JP2925291B2 (ja) 堆積膜形成装置
JPH1192280A (ja) シリコンエピタキシャル気相成長装置
JP2990858B2 (ja) 排気ガス処理装置とその清浄化方法
JP3553692B2 (ja) プラズマ気相成長装置及びそのプラズマ気相成長装置における防着シールドの薄膜除去方法
JPH02175876A (ja) プラズマ処理方法及び装置
JPH02138472A (ja) 推積膜形成装置の洗浄方法
JPH02236279A (ja) アモルファスシリコン系薄膜の形成装置
JPH1145858A (ja) 化合物半導体気相成長装置および方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees