JPH0120553B2 - - Google Patents

Info

Publication number
JPH0120553B2
JPH0120553B2 JP60035678A JP3567885A JPH0120553B2 JP H0120553 B2 JPH0120553 B2 JP H0120553B2 JP 60035678 A JP60035678 A JP 60035678A JP 3567885 A JP3567885 A JP 3567885A JP H0120553 B2 JPH0120553 B2 JP H0120553B2
Authority
JP
Japan
Prior art keywords
region
floating gate
information
control gate
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60035678A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61194875A (ja
Inventor
Yoshihisa Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP60035678A priority Critical patent/JPS61194875A/ja
Priority to US06/832,580 priority patent/US4754320A/en
Priority to EP86102405A priority patent/EP0193841B1/en
Priority to DE8686102405T priority patent/DE3679087D1/de
Publication of JPS61194875A publication Critical patent/JPS61194875A/ja
Publication of JPH0120553B2 publication Critical patent/JPH0120553B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
    • H01L21/2815—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects part or whole of the electrode is a sidewall spacer or made by a similar technique, e.g. transformation under mask, plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H10B41/48—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a tunnel dielectric layer also being used as part of the peripheral transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Non-Volatile Memory (AREA)
JP60035678A 1985-02-25 1985-02-25 情報の再書換え可能な読み出し専用半導体メモリ及びその製造方法 Granted JPS61194875A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP60035678A JPS61194875A (ja) 1985-02-25 1985-02-25 情報の再書換え可能な読み出し専用半導体メモリ及びその製造方法
US06/832,580 US4754320A (en) 1985-02-25 1986-02-24 EEPROM with sidewall control gate
EP86102405A EP0193841B1 (en) 1985-02-25 1986-02-25 Semiconductor device and method of manufacturing the same
DE8686102405T DE3679087D1 (de) 1985-02-25 1986-02-25 Halbleitervorrichtung und verfahren zu seiner herstellung.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60035678A JPS61194875A (ja) 1985-02-25 1985-02-25 情報の再書換え可能な読み出し専用半導体メモリ及びその製造方法

Publications (2)

Publication Number Publication Date
JPS61194875A JPS61194875A (ja) 1986-08-29
JPH0120553B2 true JPH0120553B2 (hr) 1989-04-17

Family

ID=12448539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60035678A Granted JPS61194875A (ja) 1985-02-25 1985-02-25 情報の再書換え可能な読み出し専用半導体メモリ及びその製造方法

Country Status (1)

Country Link
JP (1) JPS61194875A (hr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910000139B1 (ko) * 1986-10-27 1991-01-21 가부시키가이샤 도시바 불휘발성 반도체기억장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915381A (hr) * 1972-05-18 1974-02-09
JPS5632464B2 (hr) * 1977-10-03 1981-07-28
JPS5764965A (en) * 1980-10-08 1982-04-20 Semiconductor Energy Lab Co Ltd Semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5632464U (hr) * 1979-08-17 1981-03-30

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915381A (hr) * 1972-05-18 1974-02-09
JPS5632464B2 (hr) * 1977-10-03 1981-07-28
JPS5764965A (en) * 1980-10-08 1982-04-20 Semiconductor Energy Lab Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS61194875A (ja) 1986-08-29

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term