JPH01179794A - GaAlAsの液相の結晶成長方法 - Google Patents
GaAlAsの液相の結晶成長方法Info
- Publication number
- JPH01179794A JPH01179794A JP76488A JP76488A JPH01179794A JP H01179794 A JPH01179794 A JP H01179794A JP 76488 A JP76488 A JP 76488A JP 76488 A JP76488 A JP 76488A JP H01179794 A JPH01179794 A JP H01179794A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- melt
- growth
- crystal
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP76488A JPH01179794A (ja) | 1988-01-07 | 1988-01-07 | GaAlAsの液相の結晶成長方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP76488A JPH01179794A (ja) | 1988-01-07 | 1988-01-07 | GaAlAsの液相の結晶成長方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01179794A true JPH01179794A (ja) | 1989-07-17 |
JPH0477717B2 JPH0477717B2 (enrdf_load_stackoverflow) | 1992-12-09 |
Family
ID=11482763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP76488A Granted JPH01179794A (ja) | 1988-01-07 | 1988-01-07 | GaAlAsの液相の結晶成長方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01179794A (enrdf_load_stackoverflow) |
-
1988
- 1988-01-07 JP JP76488A patent/JPH01179794A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0477717B2 (enrdf_load_stackoverflow) | 1992-12-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Ross et al. | High-quality GaN grown by reactive sputtering | |
JPH01179794A (ja) | GaAlAsの液相の結晶成長方法 | |
JPH01179793A (ja) | GaAlAsの液相結晶成長方法 | |
JPS5913698A (ja) | ZnSeのエピタキシヤル成長法及び成長装置 | |
JPH01179792A (ja) | GaAlAs液相結晶成長方法 | |
JP2714885B2 (ja) | 半導体発光素子とその製造方法 | |
JP2813711B2 (ja) | ▲iii▼−▲v▼化合物半導体結晶への亜鉛拡散方法 | |
JPS5939798A (ja) | ZnSe単結晶薄膜の製造方法 | |
JPS6027688A (ja) | P型ZnSe単結晶の成長方法 | |
JP3101753B2 (ja) | 気相成長方法 | |
KR20250043064A (ko) | 도핑된 펠릿을 이용한 단결정 제조 방법 및 단결정 | |
JP2563781B2 (ja) | 化合物半導体薄膜の製造方法 | |
JPH01305892A (ja) | Si分子線源 | |
JP3557690B2 (ja) | 結晶成長方法 | |
JPH08333193A (ja) | 半導体結晶の製造方法およびその製造装置 | |
JP2547585B2 (ja) | ZnSe単結晶の成長方法 | |
JPS6034253B2 (ja) | 液相エピタキシヤル成長方法 | |
JPH0477713B2 (enrdf_load_stackoverflow) | ||
JPS6357398B2 (enrdf_load_stackoverflow) | ||
JPS6343332A (ja) | 分子線エピタキシヤル成長方法 | |
JPS63151700A (ja) | 2−6族化合物半導体の成長法 | |
JPH01176299A (ja) | Ga↓1↓−↓xAl↓xAsの結晶成長方法 | |
JPH02141498A (ja) | InGaP結晶の成長方法 | |
JPH02296791A (ja) | 液相エピタキシャル成長方法 | |
JPS63271982A (ja) | 発光素子及びその製造法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |