JPH0477713B2 - - Google Patents
Info
- Publication number
- JPH0477713B2 JPH0477713B2 JP14988A JP14988A JPH0477713B2 JP H0477713 B2 JPH0477713 B2 JP H0477713B2 JP 14988 A JP14988 A JP 14988A JP 14988 A JP14988 A JP 14988A JP H0477713 B2 JPH0477713 B2 JP H0477713B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- growth
- melt
- gaas
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14988A JPH01176298A (ja) | 1988-01-05 | 1988-01-05 | Ga↓1↓−↓xAl↓xAs結晶成長方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14988A JPH01176298A (ja) | 1988-01-05 | 1988-01-05 | Ga↓1↓−↓xAl↓xAs結晶成長方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01176298A JPH01176298A (ja) | 1989-07-12 |
JPH0477713B2 true JPH0477713B2 (enrdf_load_stackoverflow) | 1992-12-09 |
Family
ID=11465979
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14988A Granted JPH01176298A (ja) | 1988-01-05 | 1988-01-05 | Ga↓1↓−↓xAl↓xAs結晶成長方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01176298A (enrdf_load_stackoverflow) |
-
1988
- 1988-01-05 JP JP14988A patent/JPH01176298A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH01176298A (ja) | 1989-07-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |