JPH01176298A - Ｇａ↓１↓−↓ｘＡｌ↓ｘＡｓ結晶成長方法 - Google Patents

Ｇａ↓１↓−↓ｘＡｌ↓ｘＡｓ結晶成長方法

Info

Publication number
JPH01176298A
JPH01176298A JP14988A JP14988A JPH01176298A JP H01176298 A JPH01176298 A JP H01176298A JP 14988 A JP14988 A JP 14988A JP 14988 A JP14988 A JP 14988A JP H01176298 A JPH01176298 A JP H01176298A
Authority
JP
Japan
Prior art keywords
layer
growth
melt
time
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14988A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0477713B2 (enrdf_load_stackoverflow
Inventor
Ko Takahashi
高橋　香
Sumio Ishimatsu
石松　純男
Masaaki Sakata
雅昭 坂田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP14988A priority Critical patent/JPH01176298A/ja
Publication of JPH01176298A publication Critical patent/JPH01176298A/ja
Publication of JPH0477713B2 publication Critical patent/JPH0477713B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP14988A 1988-01-05 1988-01-05 Ｇａ↓１↓−↓ｘＡｌ↓ｘＡｓ結晶成長方法 Granted JPH01176298A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14988A JPH01176298A (ja) 1988-01-05 1988-01-05 Ｇａ↓１↓−↓ｘＡｌ↓ｘＡｓ結晶成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14988A JPH01176298A (ja) 1988-01-05 1988-01-05 Ｇａ↓１↓−↓ｘＡｌ↓ｘＡｓ結晶成長方法

Publications (2)

Publication Number Publication Date
JPH01176298A true JPH01176298A (ja) 1989-07-12
JPH0477713B2 JPH0477713B2 (enrdf_load_stackoverflow) 1992-12-09

Family

ID=11465979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14988A Granted JPH01176298A (ja) 1988-01-05 1988-01-05 Ｇａ↓１↓−↓ｘＡｌ↓ｘＡｓ結晶成長方法

Country Status (1)

Country Link
JP (1) JPH01176298A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0477713B2 (enrdf_load_stackoverflow) 1992-12-09

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