JPH01179793A - GaAlAsの液相結晶成長方法 - Google Patents
GaAlAsの液相結晶成長方法Info
- Publication number
- JPH01179793A JPH01179793A JP76388A JP76388A JPH01179793A JP H01179793 A JPH01179793 A JP H01179793A JP 76388 A JP76388 A JP 76388A JP 76388 A JP76388 A JP 76388A JP H01179793 A JPH01179793 A JP H01179793A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- crystal
- temperature
- gaas
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP76388A JPH01179793A (ja) | 1988-01-07 | 1988-01-07 | GaAlAsの液相結晶成長方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP76388A JPH01179793A (ja) | 1988-01-07 | 1988-01-07 | GaAlAsの液相結晶成長方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01179793A true JPH01179793A (ja) | 1989-07-17 |
JPH0477716B2 JPH0477716B2 (enrdf_load_stackoverflow) | 1992-12-09 |
Family
ID=11482737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP76388A Granted JPH01179793A (ja) | 1988-01-07 | 1988-01-07 | GaAlAsの液相結晶成長方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01179793A (enrdf_load_stackoverflow) |
-
1988
- 1988-01-07 JP JP76388A patent/JPH01179793A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0477716B2 (enrdf_load_stackoverflow) | 1992-12-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |