JPH0477716B2 - - Google Patents
Info
- Publication number
- JPH0477716B2 JPH0477716B2 JP76388A JP76388A JPH0477716B2 JP H0477716 B2 JPH0477716 B2 JP H0477716B2 JP 76388 A JP76388 A JP 76388A JP 76388 A JP76388 A JP 76388A JP H0477716 B2 JPH0477716 B2 JP H0477716B2
- Authority
- JP
- Japan
- Prior art keywords
- melt
- gaas
- temperature
- growth
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP76388A JPH01179793A (ja) | 1988-01-07 | 1988-01-07 | GaAlAsの液相結晶成長方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP76388A JPH01179793A (ja) | 1988-01-07 | 1988-01-07 | GaAlAsの液相結晶成長方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01179793A JPH01179793A (ja) | 1989-07-17 |
JPH0477716B2 true JPH0477716B2 (enrdf_load_stackoverflow) | 1992-12-09 |
Family
ID=11482737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP76388A Granted JPH01179793A (ja) | 1988-01-07 | 1988-01-07 | GaAlAsの液相結晶成長方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01179793A (enrdf_load_stackoverflow) |
-
1988
- 1988-01-07 JP JP76388A patent/JPH01179793A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH01179793A (ja) | 1989-07-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4619718A (en) | Method of manufacturing a Group II-VI semiconductor device having a PN junction | |
JPS6037076B2 (ja) | 3−6族化合物半導体の温度液相成長法 | |
JPH0477716B2 (enrdf_load_stackoverflow) | ||
JPH0477717B2 (enrdf_load_stackoverflow) | ||
JPH0477715B2 (enrdf_load_stackoverflow) | ||
JPS5913698A (ja) | ZnSeのエピタキシヤル成長法及び成長装置 | |
JPS58156598A (ja) | 結晶成長法 | |
JP4211897B2 (ja) | 液相エピタキシャル成長方法 | |
JP2813711B2 (ja) | ▲iii▼−▲v▼化合物半導体結晶への亜鉛拡散方法 | |
JPH1197740A (ja) | GaP発光ダイオード用エピタキシャルウェーハおよびGaP発光ダイオード | |
JP2708866B2 (ja) | P型ZnTe単結晶の製造方法 | |
JPH02141498A (ja) | InGaP結晶の成長方法 | |
JPH0477713B2 (enrdf_load_stackoverflow) | ||
JPS6034253B2 (ja) | 液相エピタキシヤル成長方法 | |
JPH0477714B2 (enrdf_load_stackoverflow) | ||
JP2783580B2 (ja) | ダブルヘテロ型赤外光発光素子 | |
JPH01315174A (ja) | 半導体発光装置 | |
JPH01164792A (ja) | 温度差法液相結晶成長の方法 | |
JPH0456128A (ja) | 2―6族間化合物半導体装置の製造方法 | |
JPS6021894A (ja) | 液相エピタキシヤル成長方法 | |
JPS63271982A (ja) | 発光素子及びその製造法 | |
JPH0566914B2 (enrdf_load_stackoverflow) | ||
JPH0566916B2 (enrdf_load_stackoverflow) | ||
JPS63151700A (ja) | 2−6族化合物半導体の成長法 | |
JPH03200380A (ja) | ZnSe発光素子の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |