JPH0116027B2 - - Google Patents

Info

Publication number
JPH0116027B2
JPH0116027B2 JP55018752A JP1875280A JPH0116027B2 JP H0116027 B2 JPH0116027 B2 JP H0116027B2 JP 55018752 A JP55018752 A JP 55018752A JP 1875280 A JP1875280 A JP 1875280A JP H0116027 B2 JPH0116027 B2 JP H0116027B2
Authority
JP
Japan
Prior art keywords
region
field effect
type
semiconductor substrate
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55018752A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56115572A (en
Inventor
Sukemitsu Takena
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP1875280A priority Critical patent/JPS56115572A/ja
Publication of JPS56115572A publication Critical patent/JPS56115572A/ja
Publication of JPH0116027B2 publication Critical patent/JPH0116027B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP1875280A 1980-02-18 1980-02-18 Field effect transistor Granted JPS56115572A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1875280A JPS56115572A (en) 1980-02-18 1980-02-18 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1875280A JPS56115572A (en) 1980-02-18 1980-02-18 Field effect transistor

Publications (2)

Publication Number Publication Date
JPS56115572A JPS56115572A (en) 1981-09-10
JPH0116027B2 true JPH0116027B2 (enrdf_load_stackoverflow) 1989-03-22

Family

ID=11980377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1875280A Granted JPS56115572A (en) 1980-02-18 1980-02-18 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS56115572A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7592841B2 (en) * 2006-05-11 2009-09-22 Dsm Solutions, Inc. Circuit configurations having four terminal JFET devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5222514B2 (enrdf_load_stackoverflow) * 1973-07-06 1977-06-17

Also Published As

Publication number Publication date
JPS56115572A (en) 1981-09-10

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