JPH0114698B2 - - Google Patents

Info

Publication number
JPH0114698B2
JPH0114698B2 JP54018629A JP1862979A JPH0114698B2 JP H0114698 B2 JPH0114698 B2 JP H0114698B2 JP 54018629 A JP54018629 A JP 54018629A JP 1862979 A JP1862979 A JP 1862979A JP H0114698 B2 JPH0114698 B2 JP H0114698B2
Authority
JP
Japan
Prior art keywords
etching
etched
film
silicon film
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54018629A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55111134A (en
Inventor
Yukio Sonobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1862979A priority Critical patent/JPS55111134A/ja
Publication of JPS55111134A publication Critical patent/JPS55111134A/ja
Publication of JPH0114698B2 publication Critical patent/JPH0114698B2/ja
Granted legal-status Critical Current

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  • Drying Of Semiconductors (AREA)
JP1862979A 1979-02-19 1979-02-19 Method of gas plasma etching Granted JPS55111134A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1862979A JPS55111134A (en) 1979-02-19 1979-02-19 Method of gas plasma etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1862979A JPS55111134A (en) 1979-02-19 1979-02-19 Method of gas plasma etching

Publications (2)

Publication Number Publication Date
JPS55111134A JPS55111134A (en) 1980-08-27
JPH0114698B2 true JPH0114698B2 (enrdf_load_stackoverflow) 1989-03-14

Family

ID=11976901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1862979A Granted JPS55111134A (en) 1979-02-19 1979-02-19 Method of gas plasma etching

Country Status (1)

Country Link
JP (1) JPS55111134A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117241A (en) * 1981-01-13 1982-07-21 Matsushita Electric Ind Co Ltd Reactive ion etching method
JPH0666299B2 (ja) * 1983-05-10 1994-08-24 株式会社東芝 プラズマエツチング方法
JPS6062124A (ja) * 1983-09-14 1985-04-10 Toshiba Corp 反応性イオンエッチング装置の制御方法
JPH0622215B2 (ja) * 1983-05-10 1994-03-23 株式会社東芝 プラズマエツチング方法
JP2590472B2 (ja) * 1987-03-27 1997-03-12 ソニー株式会社 エツチング方法
JPH0529471A (ja) * 1991-07-25 1993-02-05 Mitsubishi Electric Corp 半導体装置の製造方法
JPH08172081A (ja) * 1995-08-28 1996-07-02 Hitachi Ltd プラズマ表面処理装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5328378A (en) * 1976-08-27 1978-03-16 Handotai Kenkyu Shinkokai Method of plasma etching
JPS5326674A (en) * 1976-08-25 1978-03-11 Hitachi Ltd Plasma etching

Also Published As

Publication number Publication date
JPS55111134A (en) 1980-08-27

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