JPH0114170B2 - - Google Patents
Info
- Publication number
- JPH0114170B2 JPH0114170B2 JP60143261A JP14326185A JPH0114170B2 JP H0114170 B2 JPH0114170 B2 JP H0114170B2 JP 60143261 A JP60143261 A JP 60143261A JP 14326185 A JP14326185 A JP 14326185A JP H0114170 B2 JPH0114170 B2 JP H0114170B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- particles
- coating
- electrodes
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052710 silicon Inorganic materials 0.000 claims description 42
- 239000010703 silicon Substances 0.000 claims description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 39
- 238000000576 coating method Methods 0.000 claims description 37
- 239000002245 particle Substances 0.000 claims description 35
- 239000010453 quartz Substances 0.000 claims description 34
- 239000011248 coating agent Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 239000012159 carrier gas Substances 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 230000008016 vaporization Effects 0.000 claims description 8
- 238000009834 vaporization Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 239000008187 granular material Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 41
- 235000012239 silicon dioxide Nutrition 0.000 description 34
- 238000004519 manufacturing process Methods 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 229910001873 dinitrogen Inorganic materials 0.000 description 8
- 239000000155 melt Substances 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052580 B4C Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000011253 protective coating Substances 0.000 description 4
- 238000005488 sandblasting Methods 0.000 description 4
- 239000011856 silicon-based particle Substances 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000004576 sand Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- MGGVALXERJRIRO-UHFFFAOYSA-N 4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-2-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-1H-pyrazol-5-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)O MGGVALXERJRIRO-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 239000011043 treated quartz Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/626,055 US4565711A (en) | 1984-06-29 | 1984-06-29 | Method of and apparatus for the coating of quartz crucibles with protective layers |
| US626055 | 1996-05-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6183616A JPS6183616A (ja) | 1986-04-28 |
| JPH0114170B2 true JPH0114170B2 (US06342305-20020129-C00040.png) | 1989-03-09 |
Family
ID=24508767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60143261A Granted JPS6183616A (ja) | 1984-06-29 | 1985-06-29 | 蒸気の発生方法 |
Country Status (10)
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5073241A (en) * | 1986-01-31 | 1991-12-17 | Kabushiki Kaisha Meidenshae | Method for carbon film production |
| JP2531572B2 (ja) * | 1993-08-09 | 1996-09-04 | 東芝セラミックス株式会社 | 石英ガラスの酸窒化方法および表面処理方法 |
| DE4413423A1 (de) * | 1994-04-18 | 1995-10-19 | Paar Anton Kg | Vorrichtung zum Aufschluß von Substanzen |
| US5993902A (en) * | 1997-04-09 | 1999-11-30 | Seh America, Inc. | Apparatus and method for extending the lifetime of an exhaust sleeve for growing single crystal silicon by silicon nitride (SI3 N4) coating |
| WO1999005338A2 (en) | 1997-07-24 | 1999-02-04 | Toyo Tanso Usa, Inc. | Surface converted graphite components and methods of making same |
| US6479108B2 (en) | 2000-11-15 | 2002-11-12 | G.T. Equipment Technologies, Inc. | Protective layer for quartz crucibles used for silicon crystallization |
| US20040187767A1 (en) * | 2002-10-24 | 2004-09-30 | Intel Corporation | Device and method for multicrystalline silicon wafers |
| KR101140076B1 (ko) * | 2007-08-23 | 2012-04-30 | 오브스체스트보 에스 오그라니체노이 오트베츠트벤노스츄 ＇솔라르 씨＇ | 다결정 실리콘 제조 방법 |
| US9221709B2 (en) * | 2011-03-31 | 2015-12-29 | Raytheon Company | Apparatus for producing a vitreous inner layer on a fused silica body, and method of operating same |
| CN102432189B (zh) * | 2011-09-20 | 2016-06-01 | 沈福茂 | 石英坩埚钡涂层的喷涂设备 |
| JP6905149B2 (ja) * | 2019-02-14 | 2021-07-21 | 株式会社日立ハイテク | 半導体製造装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2665226A (en) * | 1950-04-27 | 1954-01-05 | Nat Res Corp | Method and apparatus for vapor coating |
| US3036549A (en) * | 1957-05-08 | 1962-05-29 | Sumitomo Electric Industries | Apparatus for vacuum evaporation of metals |
| GB939081A (en) * | 1959-01-16 | 1963-10-09 | Edwards High Vacuum Int Ltd | Improvements in or relating to the evaporation of metal/metalloid mixtures |
| US3153137A (en) * | 1961-10-13 | 1964-10-13 | Union Carbide Corp | Evaporation source |
| US3129315A (en) * | 1961-12-26 | 1964-04-14 | Lear Siegler Inc | Vacuum vaporizing fixture |
| CH472509A (de) * | 1965-07-09 | 1969-05-15 | Ibm | Verfahren zur Herstellung dünner Schichten von Chalkogeniden der Lanthaniden |
| DE1696614A1 (de) * | 1967-05-13 | 1971-11-18 | Telefunken Patent | Verfahren zum Aufdampfen von Schichten auf einen Traegerkoerper |
| FR1588510A (US06342305-20020129-C00040.png) * | 1968-07-08 | 1970-04-17 |
-
1984
- 1984-06-29 US US06/626,055 patent/US4565711A/en not_active Expired - Fee Related
-
1985
- 1985-06-19 IL IL75577A patent/IL75577A/xx unknown
- 1985-06-19 SE SE8503048A patent/SE8503048L/ not_active Application Discontinuation
- 1985-06-24 CA CA000484989A patent/CA1247946A/en not_active Expired
- 1985-06-27 GB GB08516267A patent/GB2160899B/en not_active Expired
- 1985-06-28 CH CH2778/85A patent/CH667107A5/de not_active IP Right Cessation
- 1985-06-28 FR FR8510377A patent/FR2566805A1/fr not_active Withdrawn
- 1985-06-28 IT IT21347/85A patent/IT1185139B/it active
- 1985-06-28 DE DE19853523090 patent/DE3523090A1/de not_active Withdrawn
- 1985-06-29 JP JP60143261A patent/JPS6183616A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| CA1247946A (en) | 1989-01-03 |
| FR2566805A1 (fr) | 1986-01-03 |
| DE3523090A1 (de) | 1986-01-09 |
| GB2160899A (en) | 1986-01-02 |
| SE8503048L (sv) | 1985-12-30 |
| US4565711A (en) | 1986-01-21 |
| GB8516267D0 (en) | 1985-07-31 |
| IL75577A0 (en) | 1985-10-31 |
| JPS6183616A (ja) | 1986-04-28 |
| IL75577A (en) | 1989-02-28 |
| CH667107A5 (de) | 1988-09-15 |
| SE8503048D0 (sv) | 1985-06-19 |
| IT8521347A0 (it) | 1985-06-28 |
| IT1185139B (it) | 1987-11-04 |
| GB2160899B (en) | 1988-05-11 |
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