JPH01133344A - 半導体集積回路の製造方法 - Google Patents

Info

Publication number

JPH01133344A

JPH01133344A JP62292406A JP29240687A JPH01133344A JP H01133344 A JPH01133344 A JP H01133344A JP 62292406 A JP62292406 A JP 62292406A JP 29240687 A JP29240687 A JP 29240687A JP H01133344 A JPH01133344 A JP H01133344A

Authority

JP

Japan

Prior art keywords

region

lower electrode

conductivity type

forming

type

Prior art date

1987-11-19

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

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• 238000004519 manufacturing process Methods 0.000 title claims description 11
• 239000010408 film Substances 0.000 claims abstract description 26
• 238000002955 isolation Methods 0.000 claims abstract description 16
• 239000010409 thin film Substances 0.000 claims abstract description 15
• 238000000034 method Methods 0.000 claims description 30
• 239000003990 capacitor Substances 0.000 claims description 22
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• 239000012535 impurity Substances 0.000 claims description 5
• 238000000151 deposition Methods 0.000 claims description 2
• 238000009792 diffusion process Methods 0.000 abstract description 25
• 238000010438 heat treatment Methods 0.000 abstract description 7
• ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 4
• 229910052796 boron Inorganic materials 0.000 abstract description 4
• 230000003321 amplification Effects 0.000 abstract description 3
• 238000003199 nucleic acid amplification method Methods 0.000 abstract description 3
• 238000005121 nitriding Methods 0.000 abstract 2
• 230000008021 deposition Effects 0.000 abstract 1
• 238000000926 separation method Methods 0.000 description 9
• 150000004767 nitrides Chemical class 0.000 description 8
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
• 229910052782 aluminium Inorganic materials 0.000 description 5
• OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
• 229910052581 Si3N4 Inorganic materials 0.000 description 4
• 230000015572 biosynthetic process Effects 0.000 description 4
• 229910052698 phosphorus Inorganic materials 0.000 description 4
• 239000011574 phosphorus Substances 0.000 description 4
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
• 239000000463 material Substances 0.000 description 3
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
• WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
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• 229910052710 silicon Inorganic materials 0.000 description 2
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• 229910052814 silicon oxide Inorganic materials 0.000 description 2
• 229910052787 antimony Inorganic materials 0.000 description 1
• 229910052785 arsenic Inorganic materials 0.000 description 1
• RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
• 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
• 238000005229 chemical vapour deposition Methods 0.000 description 1
• 238000010586 diagram Methods 0.000 description 1
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• 229920006395 saturated elastomer Polymers 0.000 description 1
• LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
• 238000004544 sputter deposition Methods 0.000 description 1
• 238000007740 vapor deposition Methods 0.000 description 1
• 235000012431 wafers Nutrition 0.000 description 1
• 238000001039 wet etching Methods 0.000 description 1