JPH01112763A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPH01112763A JPH01112763A JP62270601A JP27060187A JPH01112763A JP H01112763 A JPH01112763 A JP H01112763A JP 62270601 A JP62270601 A JP 62270601A JP 27060187 A JP27060187 A JP 27060187A JP H01112763 A JPH01112763 A JP H01112763A
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- well region
- well
- polar transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62270601A JPH01112763A (ja) | 1987-10-27 | 1987-10-27 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62270601A JPH01112763A (ja) | 1987-10-27 | 1987-10-27 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01112763A true JPH01112763A (ja) | 1989-05-01 |
JPH0580155B2 JPH0580155B2 (enrdf_load_html_response) | 1993-11-08 |
Family
ID=17488370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62270601A Granted JPH01112763A (ja) | 1987-10-27 | 1987-10-27 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01112763A (enrdf_load_html_response) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02303035A (ja) * | 1989-05-17 | 1990-12-17 | Toshiba Corp | 半導体装置 |
FR2675311A1 (fr) * | 1991-04-09 | 1992-10-16 | Samsung Electronics Co Ltd | Dispositif semi-conducteur du type bicmos pour circuits integres et son procede de fabrication. |
-
1987
- 1987-10-27 JP JP62270601A patent/JPH01112763A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02303035A (ja) * | 1989-05-17 | 1990-12-17 | Toshiba Corp | 半導体装置 |
FR2675311A1 (fr) * | 1991-04-09 | 1992-10-16 | Samsung Electronics Co Ltd | Dispositif semi-conducteur du type bicmos pour circuits integres et son procede de fabrication. |
Also Published As
Publication number | Publication date |
---|---|
JPH0580155B2 (enrdf_load_html_response) | 1993-11-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |