JPH01112763A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH01112763A
JPH01112763A JP62270601A JP27060187A JPH01112763A JP H01112763 A JPH01112763 A JP H01112763A JP 62270601 A JP62270601 A JP 62270601A JP 27060187 A JP27060187 A JP 27060187A JP H01112763 A JPH01112763 A JP H01112763A
Authority
JP
Japan
Prior art keywords
region
layer
well region
well
polar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62270601A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0580155B2 (OSRAM
Inventor
Toshinori Omi
俊典 近江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62270601A priority Critical patent/JPH01112763A/ja
Publication of JPH01112763A publication Critical patent/JPH01112763A/ja
Publication of JPH0580155B2 publication Critical patent/JPH0580155B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP62270601A 1987-10-27 1987-10-27 半導体装置 Granted JPH01112763A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62270601A JPH01112763A (ja) 1987-10-27 1987-10-27 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62270601A JPH01112763A (ja) 1987-10-27 1987-10-27 半導体装置

Publications (2)

Publication Number Publication Date
JPH01112763A true JPH01112763A (ja) 1989-05-01
JPH0580155B2 JPH0580155B2 (OSRAM) 1993-11-08

Family

ID=17488370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62270601A Granted JPH01112763A (ja) 1987-10-27 1987-10-27 半導体装置

Country Status (1)

Country Link
JP (1) JPH01112763A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02303035A (ja) * 1989-05-17 1990-12-17 Toshiba Corp 半導体装置
FR2675311A1 (fr) * 1991-04-09 1992-10-16 Samsung Electronics Co Ltd Dispositif semi-conducteur du type bicmos pour circuits integres et son procede de fabrication.

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02303035A (ja) * 1989-05-17 1990-12-17 Toshiba Corp 半導体装置
FR2675311A1 (fr) * 1991-04-09 1992-10-16 Samsung Electronics Co Ltd Dispositif semi-conducteur du type bicmos pour circuits integres et son procede de fabrication.

Also Published As

Publication number Publication date
JPH0580155B2 (OSRAM) 1993-11-08

Similar Documents

Publication Publication Date Title
KR840005927A (ko) 반도체 집적 회로 장치 및 그의 제조 방법
JP3097092B2 (ja) Ｂｉ―ＣＭＯＳ集積回路およびその製造方法
JPH02219262A (ja) 半導体装置
JPH02101747A (ja) 半導体集積回路とその製造方法
JPH01112763A (ja) 半導体装置
KR100482950B1 (ko) 반도체소자 및 그 제조방법
JPS5949702B2 (ja) 半導体集積回路装置
JPH03262154A (ja) ＢｉＣＭＯＳ型半導体集積回路の製造方法
JP2890509B2 (ja) 半導体装置の製造方法
JPS61236155A (ja) 半導体装置
JP3400234B2 (ja) 半導体装置
KR940001257B1 (ko) 반도체 소자 제조방법
JP3040211B2 (ja) 半導体集積回路の製造方法
JPH0653423A (ja) 半導体装置およびその製造方法
JP2830089B2 (ja) 半導体集積回路の製造方法
JPS632365A (ja) 半導体集積回路の製造方法
JPH04267554A (ja) ＢｉＭＯＳ半導体装置及びその製造方法
JPS61244059A (ja) 半導体装置の製造方法
JPH07101717B2 (ja) 半導体装置の製造方法
JPH0321055A (ja) 半導体集積回路装置およびその製造方法
JPH07335662A (ja) 半導体装置およびその製造方法
JPH0425067A (ja) 半導体装置の製造方法
JPS63269558A (ja) 半導体装置
JPH03159246A (ja) 半導体装置
JPH0797609B2 (ja) 相補型ｍｉｓ集積回路

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term