JP7842041B2 - 窒化物半導体装置および窒化物半導体装置の製造方法 - Google Patents

窒化物半導体装置および窒化物半導体装置の製造方法

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Publication number
JP7842041B2
JP7842041B2 JP2022581212A JP2022581212A JP7842041B2 JP 7842041 B2 JP7842041 B2 JP 7842041B2 JP 2022581212 A JP2022581212 A JP 2022581212A JP 2022581212 A JP2022581212 A JP 2022581212A JP 7842041 B2 JP7842041 B2 JP 7842041B2
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JP
Japan
Prior art keywords
layer
thickness
nitride semiconductor
insulating layer
gate
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Active
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JP2022581212A
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English (en)
Japanese (ja)
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JPWO2022172588A1 (https=
Inventor
健太郎 近松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
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Rohm Co Ltd
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Publication of JPWO2022172588A1 publication Critical patent/JPWO2022172588A1/ja
Application granted granted Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP2022581212A 2021-02-10 2021-12-16 窒化物半導体装置および窒化物半導体装置の製造方法 Active JP7842041B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021020035 2021-02-10
JP2021020035 2021-02-10
PCT/JP2021/046551 WO2022172588A1 (ja) 2021-02-10 2021-12-16 窒化物半導体装置および窒化物半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2022172588A1 JPWO2022172588A1 (https=) 2022-08-18
JP7842041B2 true JP7842041B2 (ja) 2026-04-07

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ID=82838669

Family Applications (1)

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JP2022581212A Active JP7842041B2 (ja) 2021-02-10 2021-12-16 窒化物半導体装置および窒化物半導体装置の製造方法

Country Status (3)

Country Link
US (1) US20230387285A1 (https=)
JP (1) JP7842041B2 (https=)
WO (1) WO2022172588A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117133801A (zh) * 2022-05-20 2023-11-28 联华电子股份有限公司 具有场板结构的氮化镓元件及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015195288A (ja) 2014-03-31 2015-11-05 住友電工デバイス・イノベーション株式会社 半導体装置及び半導体装置の製造方法
JP2017073506A (ja) 2015-10-08 2017-04-13 ローム株式会社 窒化物半導体装置およびその製造方法
WO2020158394A1 (ja) 2019-02-01 2020-08-06 ローム株式会社 窒化物半導体装置
WO2020174956A1 (ja) 2019-02-28 2020-09-03 ローム株式会社 窒化物半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7137947B2 (ja) * 2018-03-22 2022-09-15 ローム株式会社 窒化物半導体装置
US11127846B2 (en) * 2019-07-12 2021-09-21 Vanguard International Semiconductor Corporation High electron mobility transistor devices and methods for forming the same
US11398546B2 (en) * 2019-08-06 2022-07-26 Vanguard International Semiconductor Corporation Semiconductor devices and methods for fabricating the same
US11114532B2 (en) * 2019-11-20 2021-09-07 Vanguard International Semiconductor Corporation Semiconductor structures and methods of forming the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015195288A (ja) 2014-03-31 2015-11-05 住友電工デバイス・イノベーション株式会社 半導体装置及び半導体装置の製造方法
JP2017073506A (ja) 2015-10-08 2017-04-13 ローム株式会社 窒化物半導体装置およびその製造方法
WO2020158394A1 (ja) 2019-02-01 2020-08-06 ローム株式会社 窒化物半導体装置
WO2020174956A1 (ja) 2019-02-28 2020-09-03 ローム株式会社 窒化物半導体装置

Also Published As

Publication number Publication date
US20230387285A1 (en) 2023-11-30
WO2022172588A1 (ja) 2022-08-18
JPWO2022172588A1 (https=) 2022-08-18

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