JPWO2022172588A1 - - Google Patents
Info
- Publication number
- JPWO2022172588A1 JPWO2022172588A1 JP2022581212A JP2022581212A JPWO2022172588A1 JP WO2022172588 A1 JPWO2022172588 A1 JP WO2022172588A1 JP 2022581212 A JP2022581212 A JP 2022581212A JP 2022581212 A JP2022581212 A JP 2022581212A JP WO2022172588 A1 JPWO2022172588 A1 JP WO2022172588A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021020035 | 2021-02-10 | ||
| JP2021020035 | 2021-02-10 | ||
| PCT/JP2021/046551 WO2022172588A1 (ja) | 2021-02-10 | 2021-12-16 | 窒化物半導体装置および窒化物半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022172588A1 true JPWO2022172588A1 (https=) | 2022-08-18 |
| JP7842041B2 JP7842041B2 (ja) | 2026-04-07 |
Family
ID=82838669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022581212A Active JP7842041B2 (ja) | 2021-02-10 | 2021-12-16 | 窒化物半導体装置および窒化物半導体装置の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20230387285A1 (https=) |
| JP (1) | JP7842041B2 (https=) |
| WO (1) | WO2022172588A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117133801A (zh) * | 2022-05-20 | 2023-11-28 | 联华电子股份有限公司 | 具有场板结构的氮化镓元件及其制作方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015195288A (ja) * | 2014-03-31 | 2015-11-05 | 住友電工デバイス・イノベーション株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP2017073506A (ja) * | 2015-10-08 | 2017-04-13 | ローム株式会社 | 窒化物半導体装置およびその製造方法 |
| WO2020158394A1 (ja) * | 2019-02-01 | 2020-08-06 | ローム株式会社 | 窒化物半導体装置 |
| WO2020174956A1 (ja) * | 2019-02-28 | 2020-09-03 | ローム株式会社 | 窒化物半導体装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7137947B2 (ja) * | 2018-03-22 | 2022-09-15 | ローム株式会社 | 窒化物半導体装置 |
| US11127846B2 (en) * | 2019-07-12 | 2021-09-21 | Vanguard International Semiconductor Corporation | High electron mobility transistor devices and methods for forming the same |
| US11398546B2 (en) * | 2019-08-06 | 2022-07-26 | Vanguard International Semiconductor Corporation | Semiconductor devices and methods for fabricating the same |
| US11114532B2 (en) * | 2019-11-20 | 2021-09-07 | Vanguard International Semiconductor Corporation | Semiconductor structures and methods of forming the same |
-
2021
- 2021-12-16 JP JP2022581212A patent/JP7842041B2/ja active Active
- 2021-12-16 WO PCT/JP2021/046551 patent/WO2022172588A1/ja not_active Ceased
-
2023
- 2023-08-03 US US18/364,479 patent/US20230387285A1/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015195288A (ja) * | 2014-03-31 | 2015-11-05 | 住友電工デバイス・イノベーション株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP2017073506A (ja) * | 2015-10-08 | 2017-04-13 | ローム株式会社 | 窒化物半導体装置およびその製造方法 |
| WO2020158394A1 (ja) * | 2019-02-01 | 2020-08-06 | ローム株式会社 | 窒化物半導体装置 |
| WO2020174956A1 (ja) * | 2019-02-28 | 2020-09-03 | ローム株式会社 | 窒化物半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20230387285A1 (en) | 2023-11-30 |
| WO2022172588A1 (ja) | 2022-08-18 |
| JP7842041B2 (ja) | 2026-04-07 |
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