JP7834232B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JP7834232B2 JP7834232B2 JP2025502319A JP2025502319A JP7834232B2 JP 7834232 B2 JP7834232 B2 JP 7834232B2 JP 2025502319 A JP2025502319 A JP 2025502319A JP 2025502319 A JP2025502319 A JP 2025502319A JP 7834232 B2 JP7834232 B2 JP 7834232B2
- Authority
- JP
- Japan
- Prior art keywords
- solder
- semiconductor device
- bisn
- manufacturing
- sncu
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
Landscapes
- Die Bonding (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023025785 | 2023-02-22 | ||
| JP2023025785 | 2023-02-22 | ||
| PCT/JP2024/005317 WO2024176947A1 (ja) | 2023-02-22 | 2024-02-15 | 半導体装置、電力変換装置および半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2024176947A1 JPWO2024176947A1 (https=) | 2024-08-29 |
| JPWO2024176947A5 JPWO2024176947A5 (https=) | 2025-04-30 |
| JP7834232B2 true JP7834232B2 (ja) | 2026-03-23 |
Family
ID=92501105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025502319A Active JP7834232B2 (ja) | 2023-02-22 | 2024-02-15 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7834232B2 (https=) |
| WO (1) | WO2024176947A1 (https=) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006339174A (ja) | 2005-05-31 | 2006-12-14 | Hitachi Ltd | 半導体装置 |
| JP2014050871A (ja) | 2012-09-10 | 2014-03-20 | Renesas Electronics Corp | 半導体装置の製造方法 |
| WO2016190205A1 (ja) | 2015-05-26 | 2016-12-01 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法、及び接合材料 |
| JP2019204828A (ja) | 2018-05-22 | 2019-11-28 | 三菱電機株式会社 | 半導体装置、電力変換装置、および半導体装置の製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59169694A (ja) * | 1983-03-16 | 1984-09-25 | Hitachi Ltd | 半田接着方法 |
| JPH0596395A (ja) * | 1991-10-04 | 1993-04-20 | Mitsubishi Electric Corp | 接合材、接合方法および半導体装置 |
-
2024
- 2024-02-15 JP JP2025502319A patent/JP7834232B2/ja active Active
- 2024-02-15 WO PCT/JP2024/005317 patent/WO2024176947A1/ja not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006339174A (ja) | 2005-05-31 | 2006-12-14 | Hitachi Ltd | 半導体装置 |
| JP2014050871A (ja) | 2012-09-10 | 2014-03-20 | Renesas Electronics Corp | 半導体装置の製造方法 |
| WO2016190205A1 (ja) | 2015-05-26 | 2016-12-01 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法、及び接合材料 |
| JP2019204828A (ja) | 2018-05-22 | 2019-11-28 | 三菱電機株式会社 | 半導体装置、電力変換装置、および半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2024176947A1 (https=) | 2024-08-29 |
| WO2024176947A1 (ja) | 2024-08-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6041469B2 (ja) | 高融点半田層の形成方法 | |
| US8592986B2 (en) | High melting point soldering layer alloyed by transient liquid phase and fabrication method for the same, and semiconductor device | |
| JP2021185615A (ja) | 半導体装置及びパワーモジュール | |
| US20240395678A1 (en) | Semiconductor device, method of manufacturing semiconductor device, and power conversion device | |
| CN113811990B (zh) | 半导体装置、电力变换装置以及半导体装置的制造方法 | |
| JP2022165251A (ja) | 電力半導体装置、電力半導体装置の製造方法及び電力変換装置 | |
| EP2541593A2 (en) | Laminated high melting point soldering layer and fabrication method for the same, and semiconductor device | |
| JP5899952B2 (ja) | 半導体モジュール | |
| JP2013201330A (ja) | パワーモジュールの製造方法、及びパワーモジュール | |
| US20240030087A1 (en) | Semiconductor device, method of manufacturing semiconductor device, and power conversion device | |
| JP7450769B2 (ja) | 半導体装置の製造方法、半導体装置用基板の製造方法、半導体装置及び電力変換装置 | |
| JP7487614B2 (ja) | 半導体装置、半導体装置の製造方法及び電力変換装置 | |
| JP7418474B2 (ja) | 半導体装置および電力変換装置 | |
| JP7834232B2 (ja) | 半導体装置の製造方法 | |
| JP2019204828A (ja) | 半導体装置、電力変換装置、および半導体装置の製造方法 | |
| EP1729343B1 (en) | A power semiconductor device | |
| JP2021190653A (ja) | 半導体装置及び電力変換装置 | |
| JP2024010348A (ja) | 半導体モジュールおよび電力変換装置 | |
| JPWO2018199259A1 (ja) | 半導体装置及び電力変換装置並びに半導体装置の製造方法 | |
| WO2023022001A1 (ja) | パワーモジュールおよび電力変換装置 | |
| WO2022153780A1 (ja) | 半導体装置、電力変換装置および半導体装置の製造方法 | |
| JP2022029886A (ja) | 半導体装置、半導体装置の製造方法及び電力変換装置 | |
| JP2021101453A (ja) | 半導体装置およびその製造方法ならびに電力変換装置 | |
| JP7562012B2 (ja) | 半導体装置、電力変換装置、および半導体装置の製造方法 | |
| JP7854857B2 (ja) | 半導体モジュールの製造方法、電力変換装置の製造方法、半導体モジュール、電力変換装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250219 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250219 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20251202 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20260130 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20260210 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20260310 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7834232 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |