JP7834232B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

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Publication number
JP7834232B2
JP7834232B2 JP2025502319A JP2025502319A JP7834232B2 JP 7834232 B2 JP7834232 B2 JP 7834232B2 JP 2025502319 A JP2025502319 A JP 2025502319A JP 2025502319 A JP2025502319 A JP 2025502319A JP 7834232 B2 JP7834232 B2 JP 7834232B2
Authority
JP
Japan
Prior art keywords
solder
semiconductor device
bisn
manufacturing
sncu
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
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JP2025502319A
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English (en)
Japanese (ja)
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JPWO2024176947A5 (https=
JPWO2024176947A1 (https=
Inventor
純司 藤野
稔 江草
智香 川添
裕基 滝下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
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Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of JPWO2024176947A1 publication Critical patent/JPWO2024176947A1/ja
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Publication of JP7834232B2 publication Critical patent/JP7834232B2/ja
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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations

Landscapes

  • Die Bonding (AREA)
JP2025502319A 2023-02-22 2024-02-15 半導体装置の製造方法 Active JP7834232B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023025785 2023-02-22
JP2023025785 2023-02-22
PCT/JP2024/005317 WO2024176947A1 (ja) 2023-02-22 2024-02-15 半導体装置、電力変換装置および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPWO2024176947A1 JPWO2024176947A1 (https=) 2024-08-29
JPWO2024176947A5 JPWO2024176947A5 (https=) 2025-04-30
JP7834232B2 true JP7834232B2 (ja) 2026-03-23

Family

ID=92501105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025502319A Active JP7834232B2 (ja) 2023-02-22 2024-02-15 半導体装置の製造方法

Country Status (2)

Country Link
JP (1) JP7834232B2 (https=)
WO (1) WO2024176947A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006339174A (ja) 2005-05-31 2006-12-14 Hitachi Ltd 半導体装置
JP2014050871A (ja) 2012-09-10 2014-03-20 Renesas Electronics Corp 半導体装置の製造方法
WO2016190205A1 (ja) 2015-05-26 2016-12-01 三菱電機株式会社 半導体装置、半導体装置の製造方法、及び接合材料
JP2019204828A (ja) 2018-05-22 2019-11-28 三菱電機株式会社 半導体装置、電力変換装置、および半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59169694A (ja) * 1983-03-16 1984-09-25 Hitachi Ltd 半田接着方法
JPH0596395A (ja) * 1991-10-04 1993-04-20 Mitsubishi Electric Corp 接合材、接合方法および半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006339174A (ja) 2005-05-31 2006-12-14 Hitachi Ltd 半導体装置
JP2014050871A (ja) 2012-09-10 2014-03-20 Renesas Electronics Corp 半導体装置の製造方法
WO2016190205A1 (ja) 2015-05-26 2016-12-01 三菱電機株式会社 半導体装置、半導体装置の製造方法、及び接合材料
JP2019204828A (ja) 2018-05-22 2019-11-28 三菱電機株式会社 半導体装置、電力変換装置、および半導体装置の製造方法

Also Published As

Publication number Publication date
JPWO2024176947A1 (https=) 2024-08-29
WO2024176947A1 (ja) 2024-08-29

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