JP7834197B2 - 複合基板 - Google Patents

複合基板

Info

Publication number
JP7834197B2
JP7834197B2 JP2024558962A JP2024558962A JP7834197B2 JP 7834197 B2 JP7834197 B2 JP 7834197B2 JP 2024558962 A JP2024558962 A JP 2024558962A JP 2024558962 A JP2024558962 A JP 2024558962A JP 7834197 B2 JP7834197 B2 JP 7834197B2
Authority
JP
Japan
Prior art keywords
piezoelectric layer
layer
piezoelectric
composite substrate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024558962A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024106543A1 (https=
JPWO2024106543A5 (https=
Inventor
雄大 鵜野
知義 多井
政彦 滑川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of JPWO2024106543A1 publication Critical patent/JPWO2024106543A1/ja
Publication of JPWO2024106543A5 publication Critical patent/JPWO2024106543A5/ja
Application granted granted Critical
Publication of JP7834197B2 publication Critical patent/JP7834197B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/093—Forming inorganic materials
    • H10N30/097—Forming inorganic materials by sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
JP2024558962A 2022-11-18 2023-11-17 複合基板 Active JP7834197B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022185043 2022-11-18
JP2022185043 2022-11-18
PCT/JP2023/041547 WO2024106543A1 (ja) 2022-11-18 2023-11-17 複合基板

Publications (3)

Publication Number Publication Date
JPWO2024106543A1 JPWO2024106543A1 (https=) 2024-05-23
JPWO2024106543A5 JPWO2024106543A5 (https=) 2025-06-02
JP7834197B2 true JP7834197B2 (ja) 2026-03-23

Family

ID=91084683

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024558962A Active JP7834197B2 (ja) 2022-11-18 2023-11-17 複合基板

Country Status (5)

Country Link
US (1) US20250268107A1 (https=)
JP (1) JP7834197B2 (https=)
CN (1) CN120188598A (https=)
DE (1) DE112023003487T5 (https=)
WO (1) WO2024106543A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013080887A (ja) 2011-10-04 2013-05-02 Fujifilm Corp 圧電体素子及びその製造方法、並びに液体吐出ヘッド
JP2020065158A (ja) 2018-10-17 2020-04-23 太陽誘電株式会社 弾性波デバイスおよび複合基板
JP2020092322A (ja) 2018-12-05 2020-06-11 太陽誘電株式会社 圧電膜およびその製造方法、圧電デバイス、共振器、フィルタ並びにマルチプレクサ
WO2022210182A1 (ja) 2021-03-30 2022-10-06 日東電工株式会社 圧電体膜の製造方法、圧電素子の製造方法及び圧電デバイスの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0744030Y2 (ja) * 1987-03-10 1995-10-09 東陶機器株式会社 モノモルフ型アクチュエ−タ−
JPH0587514A (ja) * 1991-09-30 1993-04-06 Canon Inc カンチレバー状変位素子、カンチレバー型プローブ及びそれを用いた情報処理装置と走査型トンネル顕微鏡
JPH0738360A (ja) * 1993-07-19 1995-02-07 Matsushita Electric Ind Co Ltd 圧電複合基板の製造方法
JPH1051262A (ja) * 1996-04-16 1998-02-20 Matsushita Electric Ind Co Ltd 圧電振動子とその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013080887A (ja) 2011-10-04 2013-05-02 Fujifilm Corp 圧電体素子及びその製造方法、並びに液体吐出ヘッド
JP2020065158A (ja) 2018-10-17 2020-04-23 太陽誘電株式会社 弾性波デバイスおよび複合基板
JP2020092322A (ja) 2018-12-05 2020-06-11 太陽誘電株式会社 圧電膜およびその製造方法、圧電デバイス、共振器、フィルタ並びにマルチプレクサ
WO2022210182A1 (ja) 2021-03-30 2022-10-06 日東電工株式会社 圧電体膜の製造方法、圧電素子の製造方法及び圧電デバイスの製造方法

Also Published As

Publication number Publication date
WO2024106543A1 (ja) 2024-05-23
US20250268107A1 (en) 2025-08-21
DE112023003487T5 (de) 2025-07-03
JPWO2024106543A1 (https=) 2024-05-23
CN120188598A (zh) 2025-06-20

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