JP7815134B2 - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP7815134B2
JP7815134B2 JP2022559130A JP2022559130A JP7815134B2 JP 7815134 B2 JP7815134 B2 JP 7815134B2 JP 2022559130 A JP2022559130 A JP 2022559130A JP 2022559130 A JP2022559130 A JP 2022559130A JP 7815134 B2 JP7815134 B2 JP 7815134B2
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JP
Japan
Prior art keywords
region
drain
insulating film
source
semiconductor device
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Active
Application number
JP2022559130A
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English (en)
Japanese (ja)
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JPWO2022092035A1 (https=
Inventor
靖史 濱澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
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Rohm Co Ltd
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2022559130A 2020-10-29 2021-10-25 半導体装置 Active JP7815134B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020181367 2020-10-29
JP2020181367 2020-10-29
PCT/JP2021/039336 WO2022092035A1 (ja) 2020-10-29 2021-10-25 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2022092035A1 JPWO2022092035A1 (https=) 2022-05-05
JP7815134B2 true JP7815134B2 (ja) 2026-02-17

Family

ID=81381473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022559130A Active JP7815134B2 (ja) 2020-10-29 2021-10-25 半導体装置

Country Status (3)

Country Link
US (1) US20230378345A1 (https=)
JP (1) JP7815134B2 (https=)
WO (1) WO2022092035A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130341714A1 (en) 2012-06-20 2013-12-26 Samsung Electronics Co., Ltd. Semiconductor device having power metal-oxide-semiconductor transistor
JP2015216218A (ja) 2014-05-09 2015-12-03 ルネサスエレクトロニクス株式会社 半導体装置
US20160172486A1 (en) 2014-12-12 2016-06-16 Samsung Electronics Co., Ltd. Semiconductor device
US20170194489A1 (en) 2015-12-31 2017-07-06 SK Hynix Inc. Lateral power integrated devices having low on-resistance
JP2019165094A (ja) 2018-03-19 2019-09-26 株式会社東芝 半導体装置

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5059547A (en) * 1986-12-20 1991-10-22 Kabushiki Kaisha Toshiba Method of manufacturing double diffused mosfet with potential biases
JP2609619B2 (ja) * 1987-08-25 1997-05-14 三菱電機株式会社 半導体装置
US4922327A (en) * 1987-12-24 1990-05-01 University Of Toronto Innovations Foundation Semiconductor LDMOS device with upper and lower passages
US5162883A (en) * 1989-07-04 1992-11-10 Fuji Electric Co., Ltd. Increased voltage MOS semiconductor device
US5072268A (en) * 1991-03-12 1991-12-10 Power Integrations, Inc. MOS gated bipolar transistor
US5346835A (en) * 1992-07-06 1994-09-13 Texas Instruments Incorporated Triple diffused lateral resurf insulated gate field effect transistor compatible with process and method
US5378912A (en) * 1993-11-10 1995-01-03 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region
US5777363A (en) * 1993-11-29 1998-07-07 Texas Instruments Incorporated Semiconductor device with composite drift region
US5521105A (en) * 1994-08-12 1996-05-28 United Microelectronics Corporation Method of forming counter-doped island in power MOSFET
US5710455A (en) * 1996-07-29 1998-01-20 Motorola Lateral MOSFET with modified field plates and damage areas
US6639277B2 (en) * 1996-11-05 2003-10-28 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
KR100225411B1 (ko) * 1997-03-24 1999-10-15 김덕중 LDMOS(a lateral double-diffused MOS) 트랜지스터 소자 및 그의 제조 방법
US6160290A (en) * 1997-11-25 2000-12-12 Texas Instruments Incorporated Reduced surface field device having an extended field plate and method for forming the same
US5969387A (en) * 1998-06-19 1999-10-19 Philips Electronics North America Corporation Lateral thin-film SOI devices with graded top oxide and graded drift region
US6063674A (en) * 1998-10-28 2000-05-16 United Microelectronics Corp. Method for forming high voltage device
US6232636B1 (en) * 1998-11-25 2001-05-15 Philips Electronics North America Corporation Lateral thin-film silicon-on-insulator (SOI) device having multiple doping profile slopes in the drift region
US6424005B1 (en) * 1998-12-03 2002-07-23 Texas Instruments Incorporated LDMOS power device with oversized dwell
US6531355B2 (en) * 1999-01-25 2003-03-11 Texas Instruments Incorporated LDMOS device with self-aligned RESURF region and method of fabrication
KR100300069B1 (ko) * 1999-05-10 2001-09-26 김영환 반도체 소자 및 그 제조방법
US6221737B1 (en) * 1999-09-30 2001-04-24 Philips Electronics North America Corporation Method of making semiconductor devices with graded top oxide and graded drift region
JP3723410B2 (ja) * 2000-04-13 2005-12-07 三洋電機株式会社 半導体装置とその製造方法
US6506641B1 (en) * 2000-08-17 2003-01-14 Agere Systems Inc. Use of selective oxidation to improve LDMOS power transistors
US20020125530A1 (en) * 2001-03-07 2002-09-12 Semiconductor Components Industries, Llc. High voltage metal oxide device with multiple p-regions
US6448625B1 (en) * 2001-03-16 2002-09-10 Semiconductor Components Industries Llc High voltage metal oxide device with enhanced well region
US6773997B2 (en) * 2001-07-31 2004-08-10 Semiconductor Components Industries, L.L.C. Method for manufacturing a high voltage MOSFET semiconductor device with enhanced charge controllability
EP1442482A1 (en) * 2001-11-01 2004-08-04 Koninklijke Philips Electronics N.V. Lateral isolated gate bipolar transistor device
US7719054B2 (en) * 2006-05-31 2010-05-18 Advanced Analogic Technologies, Inc. High-voltage lateral DMOS device
DE10255116B4 (de) * 2002-11-26 2015-04-02 Infineon Technologies Ag LDMOS-Transistor und Verfahren zu dessen Herstellung
US20060175670A1 (en) * 2005-02-10 2006-08-10 Nec Compound Semiconductor Device, Ltd. Field effect transistor and method of manufacturing a field effect transistor
KR100731054B1 (ko) * 2005-10-28 2007-06-22 동부일렉트로닉스 주식회사 전력용 반도체 소자 및 그의 제조방법
DE102006001922B3 (de) * 2006-01-14 2007-05-03 Infineon Technologies Austria Ag Lateraler Leistungstransistor und Verfahren zu dessen Herstellung
JP2007251082A (ja) * 2006-03-20 2007-09-27 Ricoh Co Ltd Ｌｏｃｏｓオフセット構造のｍｏｓトランジスタを含む半導体装置およびその製造方法
US7847351B2 (en) * 2008-04-11 2010-12-07 Texas Instruments Incorporated Lateral metal oxide semiconductor drain extension design
US8154078B2 (en) * 2010-02-17 2012-04-10 Vanguard International Semiconductor Corporation Semiconductor structure and fabrication method thereof
US20130020632A1 (en) * 2011-07-18 2013-01-24 Disney Donald R Lateral transistor with capacitively depleted drift region
US9373619B2 (en) * 2011-08-01 2016-06-21 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage resistor with high voltage junction termination
KR101450437B1 (ko) * 2013-03-12 2014-10-14 주식회사 동부하이텍 Ldmos 소자와 그 제조 방법
US20160181369A1 (en) * 2014-12-23 2016-06-23 Kaiming Ning Jfet device and its manufacturing method
CN104992977B (zh) * 2015-05-25 2018-06-19 上海华虹宏力半导体制造有限公司 Nldmos器件及其制造方法
CN106816468B (zh) * 2015-11-30 2020-07-10 无锡华润上华科技有限公司 具有resurf结构的横向扩散金属氧化物半导体场效应管
US9583612B1 (en) * 2016-01-21 2017-02-28 Texas Instruments Incorporated Drift region implant self-aligned to field relief oxide with sidewall dielectric
CN109888015A (zh) * 2017-12-06 2019-06-14 无锡华润上华科技有限公司 Ldmos器件及其制备方法
US10510831B2 (en) * 2018-02-19 2019-12-17 Globalfoundries Singapore Pte. Ltd. Low on resistance high voltage metal oxide semiconductor transistor
US11195949B2 (en) * 2019-10-21 2021-12-07 Semiconductor Components Industries, Llc Laterally diffused metal-oxide-semiconductor (LDMOS) transistors
CN111128727B (zh) * 2019-12-10 2023-08-18 上海华虹宏力半导体制造有限公司 Jfet器件的制造方法、jfet器件及其版图结构
US11508842B2 (en) * 2020-07-06 2022-11-22 Texas Instruments Incorporated Fin field effect transistor with field plating
US12266721B2 (en) * 2020-10-27 2025-04-01 Wolfspeed, Inc. Field effect transistor with multiple stepped field plate
DE112022003464T5 (de) * 2021-07-08 2024-04-25 Rohm Co., Ltd. Halbleiterbauteil
US11742422B2 (en) * 2021-09-13 2023-08-29 Macronix International Co., Ltd. Semiconductor device and method of fabricating the same
US11942542B2 (en) * 2021-09-29 2024-03-26 Vanguard International Semiconductor Corporation Semiconductor device and fabrication method thereof
JP7803088B2 (ja) * 2021-11-12 2026-01-21 富士電機株式会社 半導体装置および半導体装置の製造方法
JP7731265B2 (ja) * 2021-11-18 2025-08-29 エイブリック株式会社 半導体装置
CN114497223B (zh) * 2022-01-27 2024-10-01 武汉新芯集成电路股份有限公司 半导体器件及其制程方法
US20230307539A1 (en) * 2022-03-23 2023-09-28 Globalfoundries U.S. Inc. Lateral diffusion field effect transistor with silicon-on-insulator region below field plate
KR20240120003A (ko) * 2023-01-31 2024-08-07 주식회사 디비하이텍 반도체 소자 및 제조방법
US20240363720A1 (en) * 2023-04-28 2024-10-31 Texas Instruments Incorporated Semiconductor device with low concentration opposite type doping drain end gate electrode

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130341714A1 (en) 2012-06-20 2013-12-26 Samsung Electronics Co., Ltd. Semiconductor device having power metal-oxide-semiconductor transistor
JP2015216218A (ja) 2014-05-09 2015-12-03 ルネサスエレクトロニクス株式会社 半導体装置
US20160172486A1 (en) 2014-12-12 2016-06-16 Samsung Electronics Co., Ltd. Semiconductor device
US20170194489A1 (en) 2015-12-31 2017-07-06 SK Hynix Inc. Lateral power integrated devices having low on-resistance
JP2019165094A (ja) 2018-03-19 2019-09-26 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
JPWO2022092035A1 (https=) 2022-05-05
WO2022092035A1 (ja) 2022-05-05
US20230378345A1 (en) 2023-11-23

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