JP7809146B2 - 結晶性酸化物膜、積層構造体、半導体装置、及び結晶性酸化物膜の製造方法 - Google Patents

結晶性酸化物膜、積層構造体、半導体装置、及び結晶性酸化物膜の製造方法

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JP7809146B2
JP7809146B2 JP2023578441A JP2023578441A JP7809146B2 JP 7809146 B2 JP7809146 B2 JP 7809146B2 JP 2023578441 A JP2023578441 A JP 2023578441A JP 2023578441 A JP2023578441 A JP 2023578441A JP 7809146 B2 JP7809146 B2 JP 7809146B2
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oxide film
crystalline oxide
maximized
maximum
reflected output
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JPWO2023149180A1 (https=
JPWO2023149180A5 (https=
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武紀 渡部
洋 橋上
崇寛 坂爪
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Laminated Bodies (AREA)
  • Thin Film Transistor (AREA)
JP2023578441A 2022-02-02 2023-01-17 結晶性酸化物膜、積層構造体、半導体装置、及び結晶性酸化物膜の製造方法 Active JP7809146B2 (ja)

Applications Claiming Priority (3)

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JP2022014838 2022-02-02
JP2022014838 2022-02-02
PCT/JP2023/001070 WO2023149180A1 (ja) 2022-02-02 2023-01-17 結晶性酸化物膜、積層構造体、半導体装置、及び結晶性酸化物膜の製造方法

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JPWO2023149180A5 JPWO2023149180A5 (https=) 2024-10-10
JP7809146B2 true JP7809146B2 (ja) 2026-01-30

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US (1) US20250133797A1 (https=)
EP (1) EP4474533A4 (https=)
JP (1) JP7809146B2 (https=)
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TW (1) TW202407138A (https=)
WO (1) WO2023149180A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015120620A (ja) 2013-12-24 2015-07-02 株式会社タムラ製作所 Ｇａ２Ｏ３系結晶膜の成膜方法、及び結晶積層構造体
JP2020073424A (ja) 2019-09-26 2020-05-14 国立研究開発法人物質・材料研究機構 α−Ｇａ２Ｏ３単結晶、その製造装置、および、それを用いた半導体素子
JP2020117430A (ja) 2019-01-23 2020-08-06 トヨタ自動車株式会社 酸化ガリウムの製造方法
WO2020217564A1 (ja) 2019-04-24 2020-10-29 日本碍子株式会社 半導体膜

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5793732B2 (ja) 2011-07-27 2015-10-14 高知県公立大学法人 ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
JP5948581B2 (ja) 2011-09-08 2016-07-06 株式会社Flosfia Ｇａ２Ｏ３系半導体素子
JP6281146B2 (ja) 2014-07-22 2018-02-21 株式会社Flosfia 結晶性半導体膜および板状体ならびに半導体装置
US20180097073A1 (en) 2016-10-03 2018-04-05 Flosfia Inc. Semiconductor device and semiconductor system including semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015120620A (ja) 2013-12-24 2015-07-02 株式会社タムラ製作所 Ｇａ２Ｏ３系結晶膜の成膜方法、及び結晶積層構造体
JP2020117430A (ja) 2019-01-23 2020-08-06 トヨタ自動車株式会社 酸化ガリウムの製造方法
WO2020217564A1 (ja) 2019-04-24 2020-10-29 日本碍子株式会社 半導体膜
JP2020073424A (ja) 2019-09-26 2020-05-14 国立研究開発法人物質・材料研究機構 α−Ｇａ２Ｏ３単結晶、その製造装置、および、それを用いた半導体素子

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EP4474533A4 (en) 2026-01-07
JPWO2023149180A1 (https=) 2023-08-10
TW202407138A (zh) 2024-02-16
US20250133797A1 (en) 2025-04-24
EP4474533A1 (en) 2024-12-11
WO2023149180A1 (ja) 2023-08-10

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