KR20240140918A - 결정성 산화물막, 적층 구조체, 반도체 장치, 및 결정성 산화물막의 제조 방법 - Google Patents

결정성 산화물막, 적층 구조체, 반도체 장치, 및 결정성 산화물막의 제조 방법 Download PDF

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KR20240140918A
KR20240140918A KR1020247025977A KR20247025977A KR20240140918A KR 20240140918 A KR20240140918 A KR 20240140918A KR 1020247025977 A KR1020247025977 A KR 1020247025977A KR 20247025977 A KR20247025977 A KR 20247025977A KR 20240140918 A KR20240140918 A KR 20240140918A
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oxide film
crystalline oxide
maximum
base substrate
reflection output
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Korean (ko)
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다케노리 와타베
히로시 하시가미
타카히로 사카츠메
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신에쓰 가가꾸 고교 가부시끼가이샤
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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
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KR1020247025977A 2022-02-02 2023-01-17 결정성 산화물막, 적층 구조체, 반도체 장치, 및 결정성 산화물막의 제조 방법 Pending KR20240140918A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2022-014838 2022-02-02
JP2022014838 2022-02-02
PCT/JP2023/001070 WO2023149180A1 (ja) 2022-02-02 2023-01-17 結晶性酸化物膜、積層構造体、半導体装置、及び結晶性酸化物膜の製造方法

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KR20240140918A true KR20240140918A (ko) 2024-09-24

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US (1) US20250133797A1 (https=)
EP (1) EP4474533A4 (https=)
JP (1) JP7809146B2 (https=)
KR (1) KR20240140918A (https=)
TW (1) TW202407138A (https=)
WO (1) WO2023149180A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013028480A (ja) 2011-07-27 2013-02-07 Kochi Univ Of Technology ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
JP2013058637A (ja) 2011-09-08 2013-03-28 Tamura Seisakusho Co Ltd Ｇａ２Ｏ３系半導体素子
WO2016013554A1 (ja) 2014-07-22 2016-01-28 株式会社Flosfia 結晶性半導体膜および板状体ならびに半導体装置
JP2018129500A (ja) 2016-10-03 2018-08-16 株式会社Flosfia 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5892495B2 (ja) * 2013-12-24 2016-03-23 株式会社タムラ製作所 Ｇａ２Ｏ３系結晶膜の成膜方法、及び結晶積層構造体
JP7176977B2 (ja) * 2019-01-23 2022-11-22 トヨタ自動車株式会社 酸化ガリウムの製造方法
JP6784871B1 (ja) * 2019-04-24 2020-11-11 日本碍子株式会社 半導体膜
JP6842128B2 (ja) * 2019-09-26 2021-03-17 国立研究開発法人物質・材料研究機構 α−Ｇａ２Ｏ３単結晶の製造装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013028480A (ja) 2011-07-27 2013-02-07 Kochi Univ Of Technology ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
JP2013058637A (ja) 2011-09-08 2013-03-28 Tamura Seisakusho Co Ltd Ｇａ２Ｏ３系半導体素子
WO2016013554A1 (ja) 2014-07-22 2016-01-28 株式会社Flosfia 結晶性半導体膜および板状体ならびに半導体装置
JP2018129500A (ja) 2016-10-03 2018-08-16 株式会社Flosfia 半導体装置

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US20250133797A1 (en) 2025-04-24
EP4474533A4 (en) 2026-01-07
JPWO2023149180A1 (https=) 2023-08-10
TW202407138A (zh) 2024-02-16
EP4474533A1 (en) 2024-12-11
WO2023149180A1 (ja) 2023-08-10
JP7809146B2 (ja) 2026-01-30

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