TW202407138A - 結晶性氧化物膜、積層結構體、半導體裝置、及結晶性氧化物膜的製造方法 - Google Patents

結晶性氧化物膜、積層結構體、半導體裝置、及結晶性氧化物膜的製造方法 Download PDF

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TW202407138A
TW202407138A TW112102636A TW112102636A TW202407138A TW 202407138 A TW202407138 A TW 202407138A TW 112102636 A TW112102636 A TW 112102636A TW 112102636 A TW112102636 A TW 112102636A TW 202407138 A TW202407138 A TW 202407138A
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oxide film
crystalline oxide
maximum
reflection output
base substrate
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TW112102636A
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渡部武紀
橋上洋
坂爪崇寬
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日商信越化學工業股份有限公司
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  • Crystallography & Structural Chemistry (AREA)
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  • General Chemical & Material Sciences (AREA)
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TW112102636A 2022-02-02 2023-01-19 結晶性氧化物膜、積層結構體、半導體裝置、及結晶性氧化物膜的製造方法 TW202407138A (zh)

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US (1) US20250133797A1 (https=)
EP (1) EP4474533A4 (https=)
JP (1) JP7809146B2 (https=)
KR (1) KR20240140918A (https=)
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JP5793732B2 (ja) 2011-07-27 2015-10-14 高知県公立大学法人 ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
JP5948581B2 (ja) 2011-09-08 2016-07-06 株式会社Flosfia Ga2O3系半導体素子
JP5892495B2 (ja) * 2013-12-24 2016-03-23 株式会社タムラ製作所 Ga2O3系結晶膜の成膜方法、及び結晶積層構造体
CN106415845B (zh) 2014-07-22 2019-12-10 株式会社Flosfia 结晶性半导体膜和板状体以及半导体装置
US20180097073A1 (en) 2016-10-03 2018-04-05 Flosfia Inc. Semiconductor device and semiconductor system including semiconductor device
JP7176977B2 (ja) * 2019-01-23 2022-11-22 トヨタ自動車株式会社 酸化ガリウムの製造方法
JP6784871B1 (ja) * 2019-04-24 2020-11-11 日本碍子株式会社 半導体膜
JP6842128B2 (ja) * 2019-09-26 2021-03-17 国立研究開発法人物質・材料研究機構 α−Ga2O3単結晶の製造装置

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US20250133797A1 (en) 2025-04-24
EP4474533A4 (en) 2026-01-07
JPWO2023149180A1 (https=) 2023-08-10
EP4474533A1 (en) 2024-12-11
WO2023149180A1 (ja) 2023-08-10
JP7809146B2 (ja) 2026-01-30

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