JPWO2023149180A5 - - Google Patents
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- JPWO2023149180A5 JPWO2023149180A5 JP2023578441A JP2023578441A JPWO2023149180A5 JP WO2023149180 A5 JPWO2023149180 A5 JP WO2023149180A5 JP 2023578441 A JP2023578441 A JP 2023578441A JP 2023578441 A JP2023578441 A JP 2023578441A JP WO2023149180 A5 JPWO2023149180 A5 JP WO2023149180A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- crystalline oxide
- maximized
- reflected output
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022014838 | 2022-02-02 | ||
| JP2022014838 | 2022-02-02 | ||
| PCT/JP2023/001070 WO2023149180A1 (ja) | 2022-02-02 | 2023-01-17 | 結晶性酸化物膜、積層構造体、半導体装置、及び結晶性酸化物膜の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023149180A1 JPWO2023149180A1 (https=) | 2023-08-10 |
| JPWO2023149180A5 true JPWO2023149180A5 (https=) | 2024-10-10 |
| JP7809146B2 JP7809146B2 (ja) | 2026-01-30 |
Family
ID=87551984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023578441A Active JP7809146B2 (ja) | 2022-02-02 | 2023-01-17 | 結晶性酸化物膜、積層構造体、半導体装置、及び結晶性酸化物膜の製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20250133797A1 (https=) |
| EP (1) | EP4474533A4 (https=) |
| JP (1) | JP7809146B2 (https=) |
| KR (1) | KR20240140918A (https=) |
| TW (1) | TW202407138A (https=) |
| WO (1) | WO2023149180A1 (https=) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5793732B2 (ja) | 2011-07-27 | 2015-10-14 | 高知県公立大学法人 | ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法 |
| JP5948581B2 (ja) | 2011-09-08 | 2016-07-06 | 株式会社Flosfia | Ｇａ２Ｏ３系半導体素子 |
| JP5892495B2 (ja) * | 2013-12-24 | 2016-03-23 | 株式会社タムラ製作所 | Ｇａ２Ｏ３系結晶膜の成膜方法、及び結晶積層構造体 |
| JP6281146B2 (ja) | 2014-07-22 | 2018-02-21 | 株式会社Flosfia | 結晶性半導体膜および板状体ならびに半導体装置 |
| US20180097073A1 (en) | 2016-10-03 | 2018-04-05 | Flosfia Inc. | Semiconductor device and semiconductor system including semiconductor device |
| JP7176977B2 (ja) * | 2019-01-23 | 2022-11-22 | トヨタ自動車株式会社 | 酸化ガリウムの製造方法 |
| WO2020217564A1 (ja) * | 2019-04-24 | 2020-10-29 | 日本碍子株式会社 | 半導体膜 |
| JP6842128B2 (ja) * | 2019-09-26 | 2021-03-17 | 国立研究開発法人物質・材料研究機構 | α−Ｇａ２Ｏ３単結晶の製造装置 |
-
2023
- 2023-01-17 US US18/835,580 patent/US20250133797A1/en active Pending
- 2023-01-17 EP EP23749497.6A patent/EP4474533A4/en active Pending
- 2023-01-17 KR KR1020247025977A patent/KR20240140918A/ko active Pending
- 2023-01-17 JP JP2023578441A patent/JP7809146B2/ja active Active
- 2023-01-17 WO PCT/JP2023/001070 patent/WO2023149180A1/ja not_active Ceased
- 2023-01-19 TW TW112102636A patent/TW202407138A/zh unknown
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