JP7781577B2 - 基板処理装置及び基板処理方法 - Google Patents

基板処理装置及び基板処理方法

Info

Publication number
JP7781577B2
JP7781577B2 JP2021154588A JP2021154588A JP7781577B2 JP 7781577 B2 JP7781577 B2 JP 7781577B2 JP 2021154588 A JP2021154588 A JP 2021154588A JP 2021154588 A JP2021154588 A JP 2021154588A JP 7781577 B2 JP7781577 B2 JP 7781577B2
Authority
JP
Japan
Prior art keywords
liquid
nozzle
substrate
gas
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021154588A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023045958A5 (enExample
JP2023045958A (ja
Inventor
美成子 犬飼
正敏 寺山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kioxia Corp
Original Assignee
Kioxia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kioxia Corp filed Critical Kioxia Corp
Priority to JP2021154588A priority Critical patent/JP7781577B2/ja
Priority to TW113125968A priority patent/TWI893895B/zh
Priority to TW114110793A priority patent/TW202529232A/zh
Priority to TW111103056A priority patent/TWI850623B/zh
Priority to CN202210159690.XA priority patent/CN115889281A/zh
Priority to US17/695,512 priority patent/US11833550B2/en
Publication of JP2023045958A publication Critical patent/JP2023045958A/ja
Priority to US18/496,222 priority patent/US12172194B2/en
Publication of JP2023045958A5 publication Critical patent/JP2023045958A5/ja
Application granted granted Critical
Publication of JP7781577B2 publication Critical patent/JP7781577B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00Accessories or details of general applicability for machines or apparatus for cleaning
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02Cleaning by the force of jets or sprays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02Cleaning by the force of jets, e.g. blowing-out cavities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2021154588A 2021-09-22 2021-09-22 基板処理装置及び基板処理方法 Active JP7781577B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2021154588A JP7781577B2 (ja) 2021-09-22 2021-09-22 基板処理装置及び基板処理方法
TW114110793A TW202529232A (zh) 2021-09-22 2022-01-25 基板處理裝置
TW111103056A TWI850623B (zh) 2021-09-22 2022-01-25 基板處理裝置及基板處理方法
TW113125968A TWI893895B (zh) 2021-09-22 2022-01-25 基板處理裝置
CN202210159690.XA CN115889281A (zh) 2021-09-22 2022-02-22 基板处理装置以及基板处理方法
US17/695,512 US11833550B2 (en) 2021-09-22 2022-03-15 Substrate processing apparatus and substrate processing method
US18/496,222 US12172194B2 (en) 2021-09-22 2023-10-27 Substrate processing apparatus and substrate processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021154588A JP7781577B2 (ja) 2021-09-22 2021-09-22 基板処理装置及び基板処理方法

Publications (3)

Publication Number Publication Date
JP2023045958A JP2023045958A (ja) 2023-04-03
JP2023045958A5 JP2023045958A5 (enExample) 2024-10-02
JP7781577B2 true JP7781577B2 (ja) 2025-12-08

Family

ID=85571568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021154588A Active JP7781577B2 (ja) 2021-09-22 2021-09-22 基板処理装置及び基板処理方法

Country Status (4)

Country Link
US (2) US11833550B2 (enExample)
JP (1) JP7781577B2 (enExample)
CN (1) CN115889281A (enExample)
TW (3) TWI893895B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230010693A (ko) * 2020-05-15 2023-01-19 가부시키가이샤 에바라 세이사꾸쇼 세정 장치 및 세정 방법
JP7781577B2 (ja) * 2021-09-22 2025-12-08 キオクシア株式会社 基板処理装置及び基板処理方法
US20250085053A1 (en) * 2023-08-24 2025-03-13 Tokyo Electron Limited Flow stability control in drying liquid between plates

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009252855A (ja) 2008-04-03 2009-10-29 Tokyo Electron Ltd 基板洗浄方法、基板洗浄装置及び記憶媒体
JP2015023182A (ja) 2013-07-19 2015-02-02 東京エレクトロン株式会社 液処理方法、液処理装置および記憶媒体
JP2015133347A (ja) 2014-01-09 2015-07-23 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置、及びコンピュータ読み取り可能な記録媒体

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3322853B2 (ja) 1999-08-10 2002-09-09 株式会社プレテック 基板の乾燥装置および洗浄装置並びに乾燥方法および洗浄方法
JP2004335542A (ja) * 2003-04-30 2004-11-25 Toshiba Corp 基板洗浄方法及び基板乾燥方法
JP4324527B2 (ja) * 2004-09-09 2009-09-02 東京エレクトロン株式会社 基板洗浄方法及び現像装置
JP4527660B2 (ja) * 2005-06-23 2010-08-18 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP5538102B2 (ja) * 2010-07-07 2014-07-02 株式会社Sokudo 基板洗浄方法および基板洗浄装置
JP5994804B2 (ja) * 2014-03-17 2016-09-21 東京エレクトロン株式会社 基板洗浄方法
JP6386769B2 (ja) 2014-04-16 2018-09-05 株式会社荏原製作所 基板乾燥装置、制御プログラム、及び基板乾燥方法
JP6817748B2 (ja) * 2016-08-24 2021-01-20 株式会社Screenホールディングス 基板処理装置および基板処理方法
JP6938248B2 (ja) * 2017-07-04 2021-09-22 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP2020141052A (ja) * 2019-02-28 2020-09-03 株式会社荏原製作所 基板処理装置、半導体製造装置、および基板処理方法
JP7194645B2 (ja) * 2019-05-31 2022-12-22 株式会社Screenホールディングス 基板処理方法および基板処理装置
WO2021020136A1 (ja) * 2019-07-26 2021-02-04 東京エレクトロン株式会社 基板処理装置、及び基板処理方法
JP7781577B2 (ja) * 2021-09-22 2025-12-08 キオクシア株式会社 基板処理装置及び基板処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009252855A (ja) 2008-04-03 2009-10-29 Tokyo Electron Ltd 基板洗浄方法、基板洗浄装置及び記憶媒体
JP2015023182A (ja) 2013-07-19 2015-02-02 東京エレクトロン株式会社 液処理方法、液処理装置および記憶媒体
JP2015133347A (ja) 2014-01-09 2015-07-23 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置、及びコンピュータ読み取り可能な記録媒体

Also Published As

Publication number Publication date
TWI850623B (zh) 2024-08-01
US20230090997A1 (en) 2023-03-23
TW202314899A (zh) 2023-04-01
US20240058847A1 (en) 2024-02-22
TWI893895B (zh) 2025-08-11
JP2023045958A (ja) 2023-04-03
TW202443757A (zh) 2024-11-01
US12172194B2 (en) 2024-12-24
CN115889281A (zh) 2023-04-04
US11833550B2 (en) 2023-12-05
TW202529232A (zh) 2025-07-16

Similar Documents

Publication Publication Date Title
JP7781577B2 (ja) 基板処理装置及び基板処理方法
CN101551602B (zh) 基板洗净方法和基板洗净装置
KR100498626B1 (ko) 기판세정장치 및 방법
JP4324527B2 (ja) 基板洗浄方法及び現像装置
US8398319B2 (en) Developing apparatus, developing method, and storage medium
TWI797159B (zh) 基板處理方法、基板處理裝置及記錄媒體
JP6887912B2 (ja) 基板処理装置、基板処理方法及び記憶媒体
JP6325067B2 (ja) 基板乾燥方法及び基板処理装置
WO2005098919A1 (ja) 基板洗浄装置、基板洗浄方法及びその方法に使用するプログラムを記録した媒体
CN101136319A (zh) 基板处理方法及基板处理装置
US20140261571A1 (en) Substrate cleaning and drying method and substrate developing method
JP6400766B2 (ja) 液処理方法、液処理装置および記憶媒体
JP2018139331A (ja) 基板乾燥方法及び基板処理装置
JP6481644B2 (ja) 基板処理方法、基板処理装置及び記憶媒体
JP2009047740A (ja) 現像装置
JP7594903B2 (ja) 現像装置及び現像方法
JP7360970B2 (ja) 基板処理方法及び基板処理装置
KR20210149961A (ko) 기판 처리 방법 및 기판 처리 장치
JP7546461B2 (ja) 液処理方法及び液処理装置
CN117539132A (zh) 液处理装置和液处理方法
WO2022153887A1 (ja) 塗布処理装置、塗布処理方法及びコンピュータ記憶媒体
CN121171940A (en) Wafer edge washing device with air knife and control method of wafer edge washing device
KR20150076853A (ko) 노즐 유닛 및 이를 포함하는 기판 처리 장치, 그리고 상기 장치을 이용한 기판 처리 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240920

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240920

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20250716

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250722

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250912

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20251028

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20251126

R150 Certificate of patent or registration of utility model

Ref document number: 7781577

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150