JP7728488B1 - 接合基板、接合基板の製造方法、及び、半導体装置の製造方法 - Google Patents

接合基板、接合基板の製造方法、及び、半導体装置の製造方法

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Publication number
JP7728488B1
JP7728488B1 JP2025518326A JP2025518326A JP7728488B1 JP 7728488 B1 JP7728488 B1 JP 7728488B1 JP 2025518326 A JP2025518326 A JP 2025518326A JP 2025518326 A JP2025518326 A JP 2025518326A JP 7728488 B1 JP7728488 B1 JP 7728488B1
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Japan
Prior art keywords
substrate
deposit
end portion
bonded
upper substrate
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Japanese (ja)
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JPWO2025191767A1 (https=
JPWO2025191767A5 (https=
Inventor
陽一郎 三谷
貴規 田中
弘樹 丹羽
寛 渡邊
恭兵 秋好
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Recrystallisation Techniques (AREA)
JP2025518326A 2024-03-14 2024-03-14 接合基板、接合基板の製造方法、及び、半導体装置の製造方法 Active JP7728488B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2024/009922 WO2025191767A1 (ja) 2024-03-14 2024-03-14 接合基板、接合基板の製造方法、及び、半導体装置の製造方法

Publications (3)

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JP7728488B1 true JP7728488B1 (ja) 2025-08-22
JPWO2025191767A1 JPWO2025191767A1 (https=) 2025-09-18
JPWO2025191767A5 JPWO2025191767A5 (https=) 2026-02-18

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Country Status (2)

Country Link
JP (1) JP7728488B1 (https=)
WO (1) WO2025191767A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05304062A (ja) * 1992-04-27 1993-11-16 Rohm Co Ltd 接合ウェーハ及びその製造方法
WO2014192411A1 (ja) * 2013-05-29 2014-12-04 住友電気工業株式会社 炭化珪素基板および炭化珪素半導体装置ならびに炭化珪素基板および炭化珪素半導体装置の製造方法
WO2018055838A1 (ja) * 2016-09-23 2018-03-29 株式会社テンシックス 半導体素子の製造方法及び半導体基板

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05304062A (ja) * 1992-04-27 1993-11-16 Rohm Co Ltd 接合ウェーハ及びその製造方法
WO2014192411A1 (ja) * 2013-05-29 2014-12-04 住友電気工業株式会社 炭化珪素基板および炭化珪素半導体装置ならびに炭化珪素基板および炭化珪素半導体装置の製造方法
WO2018055838A1 (ja) * 2016-09-23 2018-03-29 株式会社テンシックス 半導体素子の製造方法及び半導体基板

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JPWO2025191767A1 (https=) 2025-09-18
WO2025191767A1 (ja) 2025-09-18

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