JP7727740B2 - 複合基板および複合基板の製造方法 - Google Patents

複合基板および複合基板の製造方法

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Publication number
JP7727740B2
JP7727740B2 JP2023543818A JP2023543818A JP7727740B2 JP 7727740 B2 JP7727740 B2 JP 7727740B2 JP 2023543818 A JP2023543818 A JP 2023543818A JP 2023543818 A JP2023543818 A JP 2023543818A JP 7727740 B2 JP7727740 B2 JP 7727740B2
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JP
Japan
Prior art keywords
substrate
piezoelectric
piezoelectric film
composite substrate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023543818A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023026888A1 (https=
JPWO2023026888A5 (https=
Inventor
雄大 鵜野
知義 多井
政彦 滑川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of JPWO2023026888A1 publication Critical patent/JPWO2023026888A1/ja
Publication of JPWO2023026888A5 publication Critical patent/JPWO2023026888A5/ja
Application granted granted Critical
Publication of JP7727740B2 publication Critical patent/JP7727740B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/093—Forming inorganic materials
    • H10N30/097—Forming inorganic materials by sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Laminated Bodies (AREA)
JP2023543818A 2021-08-27 2022-08-15 複合基板および複合基板の製造方法 Active JP7727740B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021139135 2021-08-27
JP2021139135 2021-08-27
PCT/JP2022/030873 WO2023026888A1 (ja) 2021-08-27 2022-08-15 複合基板および複合基板の製造方法

Publications (3)

Publication Number Publication Date
JPWO2023026888A1 JPWO2023026888A1 (https=) 2023-03-02
JPWO2023026888A5 JPWO2023026888A5 (https=) 2024-05-02
JP7727740B2 true JP7727740B2 (ja) 2025-08-21

Family

ID=85321925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023543818A Active JP7727740B2 (ja) 2021-08-27 2022-08-15 複合基板および複合基板の製造方法

Country Status (5)

Country Link
US (1) US20240251682A1 (https=)
JP (1) JP7727740B2 (https=)
CN (1) CN117859417A (https=)
DE (1) DE112022003096T5 (https=)
WO (1) WO2023026888A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024209756A1 (ja) * 2023-04-03 2024-10-10 株式会社デンソー 圧電薄膜デバイスおよびその製造方法
CN121264198A (zh) * 2023-05-24 2026-01-02 日本碍子株式会社 复合基板及复合基板的制造方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007023985A1 (ja) 2005-08-23 2007-03-01 Canon Kabushiki Kaisha 圧電体素子、それを用いた液体吐出ヘッド、および液体吐出装置
JP2007088442A (ja) 2005-08-23 2007-04-05 Canon Inc 圧電体素子、それを用いた液体吐出ヘッド、および液体吐出装置
US20070197370A1 (en) 2006-02-23 2007-08-23 Fujifilm Corporation Lead zirconate titanate type composition, process for producing the same, piezoelectric body, and piezoelectric device
JP2011251866A (ja) 2010-06-01 2011-12-15 Ngk Insulators Ltd 圧電／電歪セラミックス焼結体及び圧電／電歪素子
JP2013110180A (ja) 2011-11-18 2013-06-06 Konica Minolta Holdings Inc 圧電素子およびその製造方法
JP2013128006A (ja) 2011-12-16 2013-06-27 Ngk Insulators Ltd 圧電／電歪体膜の製造方法
JP2014187094A (ja) 2013-03-22 2014-10-02 Hitachi Metals Ltd 圧電体薄膜積層基板、圧電体薄膜素子、およびそれらの製造方法
JP2015216195A (ja) 2014-05-09 2015-12-03 セイコーエプソン株式会社 超音波プローブ
WO2019102952A1 (ja) 2017-11-22 2019-05-31 株式会社村田製作所 圧電デバイス及び圧電デバイスの製造方法
WO2021141081A1 (ja) 2020-01-10 2021-07-15 日本碍子株式会社 圧電振動基板および圧電振動素子

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5525351B2 (ja) 2010-06-29 2014-06-18 太平洋セメント株式会社 圧電発音体
JP2014086400A (ja) 2012-10-26 2014-05-12 Mitsubishi Heavy Ind Ltd 高速原子ビーム源およびそれを用いた常温接合装置
JP6130085B1 (ja) 2015-09-11 2017-05-17 住友精密工業株式会社 圧電素子および圧電素子の製造方法

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007023985A1 (ja) 2005-08-23 2007-03-01 Canon Kabushiki Kaisha 圧電体素子、それを用いた液体吐出ヘッド、および液体吐出装置
JP2007088442A (ja) 2005-08-23 2007-04-05 Canon Inc 圧電体素子、それを用いた液体吐出ヘッド、および液体吐出装置
US20070197370A1 (en) 2006-02-23 2007-08-23 Fujifilm Corporation Lead zirconate titanate type composition, process for producing the same, piezoelectric body, and piezoelectric device
JP2007223840A (ja) 2006-02-23 2007-09-06 Fujifilm Corp ジルコンチタン酸鉛系組成物とその製造方法、圧電体、及び圧電素子
JP2011251866A (ja) 2010-06-01 2011-12-15 Ngk Insulators Ltd 圧電／電歪セラミックス焼結体及び圧電／電歪素子
JP2013110180A (ja) 2011-11-18 2013-06-06 Konica Minolta Holdings Inc 圧電素子およびその製造方法
JP2013128006A (ja) 2011-12-16 2013-06-27 Ngk Insulators Ltd 圧電／電歪体膜の製造方法
JP2014187094A (ja) 2013-03-22 2014-10-02 Hitachi Metals Ltd 圧電体薄膜積層基板、圧電体薄膜素子、およびそれらの製造方法
JP2015216195A (ja) 2014-05-09 2015-12-03 セイコーエプソン株式会社 超音波プローブ
WO2019102952A1 (ja) 2017-11-22 2019-05-31 株式会社村田製作所 圧電デバイス及び圧電デバイスの製造方法
US20200168785A1 (en) 2017-11-22 2020-05-28 Murata Manufacturing Co., Ltd. Piezoelectric device and method of manufacturing piezoelectric device
WO2021141081A1 (ja) 2020-01-10 2021-07-15 日本碍子株式会社 圧電振動基板および圧電振動素子
US20220329230A1 (en) 2020-01-10 2022-10-13 Ngk Insulators, Ltd. Piezoelectric vibrating substrate and piezoelectric vibrating element

Also Published As

Publication number Publication date
DE112022003096T5 (de) 2024-04-18
TW202316692A (zh) 2023-04-16
US20240251682A1 (en) 2024-07-25
WO2023026888A1 (ja) 2023-03-02
CN117859417A (zh) 2024-04-09
JPWO2023026888A1 (https=) 2023-03-02

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