DE112022003096T5 - Verbundsubstrat und Verfahren zur Herstellung eines Verbundsubstrats - Google Patents

Verbundsubstrat und Verfahren zur Herstellung eines Verbundsubstrats Download PDF

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Publication number
DE112022003096T5
DE112022003096T5 DE112022003096.8T DE112022003096T DE112022003096T5 DE 112022003096 T5 DE112022003096 T5 DE 112022003096T5 DE 112022003096 T DE112022003096 T DE 112022003096T DE 112022003096 T5 DE112022003096 T5 DE 112022003096T5
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DE
Germany
Prior art keywords
composite substrate
piezoelectric
piezoelectric film
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022003096.8T
Other languages
German (de)
English (en)
Inventor
Yudai Uno
Tomoyoshi Tai
Masahiko Namerikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of DE112022003096T5 publication Critical patent/DE112022003096T5/de
Pending legal-status Critical Current

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02543Characteristics of substrate, e.g. cutting angles
    • H03H9/02574Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/704Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02015Characteristics of piezoelectric layers, e.g. cutting angles
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/125Driving means, e.g. electrodes, coils
    • H03H9/13Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/131Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/07Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/07Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/09Forming piezoelectric or electrostrictive materials
    • H10N30/093Forming inorganic materials
    • H10N30/097Forming inorganic materials by sintering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/85Piezoelectric or electrostrictive active materials
    • H10N30/853Ceramic compositions
    • H10N30/8548Lead-based oxides
    • H10N30/8554Lead-zirconium titanate [PZT] based
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/87Electrodes or interconnections, e.g. leads or terminals

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Laminated Bodies (AREA)
DE112022003096.8T 2021-08-27 2022-08-15 Verbundsubstrat und Verfahren zur Herstellung eines Verbundsubstrats Pending DE112022003096T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021139135 2021-08-27
JP2021-139135 2021-08-27
PCT/JP2022/030873 WO2023026888A1 (ja) 2021-08-27 2022-08-15 複合基板および複合基板の製造方法

Publications (1)

Publication Number Publication Date
DE112022003096T5 true DE112022003096T5 (de) 2024-04-18

Family

ID=85321925

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022003096.8T Pending DE112022003096T5 (de) 2021-08-27 2022-08-15 Verbundsubstrat und Verfahren zur Herstellung eines Verbundsubstrats

Country Status (5)

Country Link
US (1) US20240251682A1 (https=)
JP (1) JP7727740B2 (https=)
CN (1) CN117859417A (https=)
DE (1) DE112022003096T5 (https=)
WO (1) WO2023026888A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024209756A1 (ja) * 2023-04-03 2024-10-10 株式会社デンソー 圧電薄膜デバイスおよびその製造方法
CN121264198A (zh) * 2023-05-24 2026-01-02 日本碍子株式会社 复合基板及复合基板的制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014086400A (ja) 2012-10-26 2014-05-12 Mitsubishi Heavy Ind Ltd 高速原子ビーム源およびそれを用いた常温接合装置
JP5525351B2 (ja) 2010-06-29 2014-06-18 太平洋セメント株式会社 圧電発音体
WO2017043383A1 (ja) 2015-09-11 2017-03-16 住友精密工業株式会社 圧電素子および圧電素子の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007088442A (ja) 2005-08-23 2007-04-05 Canon Inc 圧電体素子、それを用いた液体吐出ヘッド、および液体吐出装置
WO2007023985A1 (ja) * 2005-08-23 2007-03-01 Canon Kabushiki Kaisha 圧電体素子、それを用いた液体吐出ヘッド、および液体吐出装置
JP4755919B2 (ja) 2006-02-23 2011-08-24 富士フイルム株式会社 ジルコンチタン酸鉛系組成物とその製造方法、圧電体、及び圧電素子
JP2011251866A (ja) 2010-06-01 2011-12-15 Ngk Insulators Ltd 圧電/電歪セラミックス焼結体及び圧電/電歪素子
JP5861404B2 (ja) 2011-11-18 2016-02-16 コニカミノルタ株式会社 圧電素子およびその製造方法
JP2013128006A (ja) 2011-12-16 2013-06-27 Ngk Insulators Ltd 圧電/電歪体膜の製造方法
JP2014187094A (ja) 2013-03-22 2014-10-02 Hitachi Metals Ltd 圧電体薄膜積層基板、圧電体薄膜素子、およびそれらの製造方法
JP2015216195A (ja) 2014-05-09 2015-12-03 セイコーエプソン株式会社 超音波プローブ
DE112018005935T5 (de) 2017-11-22 2020-08-06 Murata Manufacturing Co., Ltd. Piezoelektrisches Bauelement und Verfahren zur Herstellung eines piezoelektrischen Bauelements
JP7015411B2 (ja) 2020-01-10 2022-02-02 日本碍子株式会社 圧電振動基板および圧電振動素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5525351B2 (ja) 2010-06-29 2014-06-18 太平洋セメント株式会社 圧電発音体
JP2014086400A (ja) 2012-10-26 2014-05-12 Mitsubishi Heavy Ind Ltd 高速原子ビーム源およびそれを用いた常温接合装置
WO2017043383A1 (ja) 2015-09-11 2017-03-16 住友精密工業株式会社 圧電素子および圧電素子の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Kanno et al. / Sensors and Actuators A 107 (2003), 68-74

Also Published As

Publication number Publication date
TW202316692A (zh) 2023-04-16
US20240251682A1 (en) 2024-07-25
WO2023026888A1 (ja) 2023-03-02
CN117859417A (zh) 2024-04-09
JPWO2023026888A1 (https=) 2023-03-02
JP7727740B2 (ja) 2025-08-21

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