JP7720915B2 - 基板処理方法および基板処理装置 - Google Patents

基板処理方法および基板処理装置

Info

Publication number
JP7720915B2
JP7720915B2 JP2023540253A JP2023540253A JP7720915B2 JP 7720915 B2 JP7720915 B2 JP 7720915B2 JP 2023540253 A JP2023540253 A JP 2023540253A JP 2023540253 A JP2023540253 A JP 2023540253A JP 7720915 B2 JP7720915 B2 JP 7720915B2
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JP
Japan
Prior art keywords
processing
pressure
substrate
fluid
valve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023540253A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023013435A5 (https=
JPWO2023013435A1 (https=
Inventor
源太郎 五師
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JPWO2023013435A1 publication Critical patent/JPWO2023013435A1/ja
Publication of JPWO2023013435A5 publication Critical patent/JPWO2023013435A5/ja
Priority to JP2025124540A priority Critical patent/JP2025143542A/ja
Application granted granted Critical
Publication of JP7720915B2 publication Critical patent/JP7720915B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/80—Cleaning only by supercritical fluids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
JP2023540253A 2021-08-05 2022-07-22 基板処理方法および基板処理装置 Active JP7720915B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025124540A JP2025143542A (ja) 2021-08-05 2025-07-25 基板処理方法および基板処理装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021129085 2021-08-05
JP2021129085 2021-08-05
PCT/JP2022/028434 WO2023013435A1 (ja) 2021-08-05 2022-07-22 基板処理方法および基板処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025124540A Division JP2025143542A (ja) 2021-08-05 2025-07-25 基板処理方法および基板処理装置

Publications (3)

Publication Number Publication Date
JPWO2023013435A1 JPWO2023013435A1 (https=) 2023-02-09
JPWO2023013435A5 JPWO2023013435A5 (https=) 2024-04-17
JP7720915B2 true JP7720915B2 (ja) 2025-08-08

Family

ID=85155585

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2023540253A Active JP7720915B2 (ja) 2021-08-05 2022-07-22 基板処理方法および基板処理装置
JP2025124540A Pending JP2025143542A (ja) 2021-08-05 2025-07-25 基板処理方法および基板処理装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025124540A Pending JP2025143542A (ja) 2021-08-05 2025-07-25 基板処理方法および基板処理装置

Country Status (5)

Country Link
US (1) US20250087501A1 (https=)
JP (2) JP7720915B2 (https=)
KR (1) KR20240038070A (https=)
CN (1) CN117716476A (https=)
WO (1) WO2023013435A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7614273B1 (ja) * 2023-08-28 2025-01-15 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2025078407A (ja) 2023-11-08 2025-05-20 東京エレクトロン株式会社 基板処理装置および基板処理方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002373880A (ja) 2001-06-13 2002-12-26 Dainippon Screen Mfg Co Ltd 高圧処理装置
JP2004225152A (ja) 2003-01-27 2004-08-12 Tokyo Electron Ltd 基板処理方法および半導体装置の製造方法
JP2004228526A (ja) 2003-01-27 2004-08-12 Tokyo Electron Ltd 基板処理方法および半導体装置の製造方法
JP2005183749A (ja) 2003-12-22 2005-07-07 Sony Corp 構造体の作製方法及びシリコン酸化膜エッチング剤
US20060135047A1 (en) 2004-12-22 2006-06-22 Alexei Sheydayi Method and apparatus for clamping a substrate in a high pressure processing system
JP2006319207A (ja) 2005-05-13 2006-11-24 Horiba Stec Co Ltd 流量制御装置、薄膜堆積装置および流量制御方法
JP2007234862A (ja) 2006-03-01 2007-09-13 Dainippon Screen Mfg Co Ltd 高圧処理装置および高圧処理方法
JP2008182034A (ja) 2007-01-24 2008-08-07 Sony Corp 基体処理方法及び基体処理装置
JP2020126974A (ja) 2019-02-06 2020-08-20 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2021061400A (ja) 2019-10-02 2021-04-15 セメス カンパニー，リミテッド 基板処理設備及び基板処理方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2574781B2 (ja) * 1987-01-21 1997-01-22 株式会社日立製作所 超臨界ガス又は液化ガスによる基板の洗浄方法
US7345000B2 (en) 2003-10-10 2008-03-18 Tokyo Electron Limited Method and system for treating a dielectric film
US7550075B2 (en) * 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
JP2018081966A (ja) * 2016-11-14 2018-05-24 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP6740098B2 (ja) * 2016-11-17 2020-08-12 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP7080134B2 (ja) * 2018-08-07 2022-06-03 東京エレクトロン株式会社 基板処理装置のパーティクル除去方法および基板処理装置
JP7605610B2 (ja) * 2020-10-23 2024-12-24 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP7598240B2 (ja) * 2020-12-25 2024-12-11 東京エレクトロン株式会社 基板乾燥方法および基板乾燥装置
JP7529629B2 (ja) * 2021-07-26 2024-08-06 東京エレクトロン株式会社 基板処理方法および基板処理装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002373880A (ja) 2001-06-13 2002-12-26 Dainippon Screen Mfg Co Ltd 高圧処理装置
JP2004225152A (ja) 2003-01-27 2004-08-12 Tokyo Electron Ltd 基板処理方法および半導体装置の製造方法
JP2004228526A (ja) 2003-01-27 2004-08-12 Tokyo Electron Ltd 基板処理方法および半導体装置の製造方法
JP2005183749A (ja) 2003-12-22 2005-07-07 Sony Corp 構造体の作製方法及びシリコン酸化膜エッチング剤
US20060135047A1 (en) 2004-12-22 2006-06-22 Alexei Sheydayi Method and apparatus for clamping a substrate in a high pressure processing system
JP2006319207A (ja) 2005-05-13 2006-11-24 Horiba Stec Co Ltd 流量制御装置、薄膜堆積装置および流量制御方法
JP2007234862A (ja) 2006-03-01 2007-09-13 Dainippon Screen Mfg Co Ltd 高圧処理装置および高圧処理方法
JP2008182034A (ja) 2007-01-24 2008-08-07 Sony Corp 基体処理方法及び基体処理装置
JP2020126974A (ja) 2019-02-06 2020-08-20 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2021061400A (ja) 2019-10-02 2021-04-15 セメス カンパニー，リミテッド 基板処理設備及び基板処理方法

Also Published As

Publication number Publication date
US20250087501A1 (en) 2025-03-13
KR20240038070A (ko) 2024-03-22
TW202325416A (zh) 2023-07-01
CN117716476A (zh) 2024-03-15
WO2023013435A1 (ja) 2023-02-09
JP2025143542A (ja) 2025-10-01
JPWO2023013435A1 (https=) 2023-02-09

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