JPWO2023013435A1 - - Google Patents

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Publication number
JPWO2023013435A1
JPWO2023013435A1 JP2023540253A JP2023540253A JPWO2023013435A1 JP WO2023013435 A1 JPWO2023013435 A1 JP WO2023013435A1 JP 2023540253 A JP2023540253 A JP 2023540253A JP 2023540253 A JP2023540253 A JP 2023540253A JP WO2023013435 A1 JPWO2023013435 A1 JP WO2023013435A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023540253A
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Japanese (ja)
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JP7720915B2 (ja
JPWO2023013435A5 (https=
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Publication of JPWO2023013435A1 publication Critical patent/JPWO2023013435A1/ja
Publication of JPWO2023013435A5 publication Critical patent/JPWO2023013435A5/ja
Priority to JP2025124540A priority Critical patent/JP2025143542A/ja
Application granted granted Critical
Publication of JP7720915B2 publication Critical patent/JP7720915B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/80—Cleaning only by supercritical fluids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
JP2023540253A 2021-08-05 2022-07-22 基板処理方法および基板処理装置 Active JP7720915B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025124540A JP2025143542A (ja) 2021-08-05 2025-07-25 基板処理方法および基板処理装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021129085 2021-08-05
JP2021129085 2021-08-05
PCT/JP2022/028434 WO2023013435A1 (ja) 2021-08-05 2022-07-22 基板処理方法および基板処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025124540A Division JP2025143542A (ja) 2021-08-05 2025-07-25 基板処理方法および基板処理装置

Publications (3)

Publication Number Publication Date
JPWO2023013435A1 true JPWO2023013435A1 (https=) 2023-02-09
JPWO2023013435A5 JPWO2023013435A5 (https=) 2024-04-17
JP7720915B2 JP7720915B2 (ja) 2025-08-08

Family

ID=85155585

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2023540253A Active JP7720915B2 (ja) 2021-08-05 2022-07-22 基板処理方法および基板処理装置
JP2025124540A Pending JP2025143542A (ja) 2021-08-05 2025-07-25 基板処理方法および基板処理装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025124540A Pending JP2025143542A (ja) 2021-08-05 2025-07-25 基板処理方法および基板処理装置

Country Status (5)

Country Link
US (1) US20250087501A1 (https=)
JP (2) JP7720915B2 (https=)
KR (1) KR20240038070A (https=)
CN (1) CN117716476A (https=)
WO (1) WO2023013435A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7614273B1 (ja) * 2023-08-28 2025-01-15 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2025078407A (ja) 2023-11-08 2025-05-20 東京エレクトロン株式会社 基板処理装置および基板処理方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63179530A (ja) * 1987-01-21 1988-07-23 Hitachi Ltd 超臨界ガス又は液化ガスによる基板の洗浄方法およびその装置
JP2002373880A (ja) * 2001-06-13 2002-12-26 Dainippon Screen Mfg Co Ltd 高圧処理装置
JP2004225152A (ja) * 2003-01-27 2004-08-12 Tokyo Electron Ltd 基板処理方法および半導体装置の製造方法
JP2004228526A (ja) * 2003-01-27 2004-08-12 Tokyo Electron Ltd 基板処理方法および半導体装置の製造方法
JP2005183749A (ja) * 2003-12-22 2005-07-07 Sony Corp 構造体の作製方法及びシリコン酸化膜エッチング剤
US20060135047A1 (en) * 2004-12-22 2006-06-22 Alexei Sheydayi Method and apparatus for clamping a substrate in a high pressure processing system
JP2006319207A (ja) * 2005-05-13 2006-11-24 Horiba Stec Co Ltd 流量制御装置、薄膜堆積装置および流量制御方法
JP2007234862A (ja) * 2006-03-01 2007-09-13 Dainippon Screen Mfg Co Ltd 高圧処理装置および高圧処理方法
JP2008182034A (ja) * 2007-01-24 2008-08-07 Sony Corp 基体処理方法及び基体処理装置
JP2020126974A (ja) * 2019-02-06 2020-08-20 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2021061400A (ja) * 2019-10-02 2021-04-15 セメス カンパニー，リミテッド 基板処理設備及び基板処理方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6606352B2 (en) * 1999-01-15 2003-08-12 Broadcom Corporation Method and apparatus for converting between byte lengths and burdened burst lengths in a high speed modem
US7345000B2 (en) 2003-10-10 2008-03-18 Tokyo Electron Limited Method and system for treating a dielectric film
US7550075B2 (en) * 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
JP2018081966A (ja) * 2016-11-14 2018-05-24 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP6740098B2 (ja) * 2016-11-17 2020-08-12 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP7080134B2 (ja) * 2018-08-07 2022-06-03 東京エレクトロン株式会社 基板処理装置のパーティクル除去方法および基板処理装置
JP7605610B2 (ja) * 2020-10-23 2024-12-24 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP7507065B2 (ja) * 2020-11-09 2024-06-27 東京エレクトロン株式会社 処理装置及び処理方法
WO2022109547A1 (en) * 2020-11-20 2022-05-27 Mks Instruments, Inc. Method and apparatus for pulse gas delivery with pressure control
JP7598240B2 (ja) * 2020-12-25 2024-12-11 東京エレクトロン株式会社 基板乾燥方法および基板乾燥装置
JP7529629B2 (ja) * 2021-07-26 2024-08-06 東京エレクトロン株式会社 基板処理方法および基板処理装置

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63179530A (ja) * 1987-01-21 1988-07-23 Hitachi Ltd 超臨界ガス又は液化ガスによる基板の洗浄方法およびその装置
JP2002373880A (ja) * 2001-06-13 2002-12-26 Dainippon Screen Mfg Co Ltd 高圧処理装置
JP2004225152A (ja) * 2003-01-27 2004-08-12 Tokyo Electron Ltd 基板処理方法および半導体装置の製造方法
JP2004228526A (ja) * 2003-01-27 2004-08-12 Tokyo Electron Ltd 基板処理方法および半導体装置の製造方法
JP2005183749A (ja) * 2003-12-22 2005-07-07 Sony Corp 構造体の作製方法及びシリコン酸化膜エッチング剤
US20060135047A1 (en) * 2004-12-22 2006-06-22 Alexei Sheydayi Method and apparatus for clamping a substrate in a high pressure processing system
JP2006319207A (ja) * 2005-05-13 2006-11-24 Horiba Stec Co Ltd 流量制御装置、薄膜堆積装置および流量制御方法
JP2007234862A (ja) * 2006-03-01 2007-09-13 Dainippon Screen Mfg Co Ltd 高圧処理装置および高圧処理方法
JP2008182034A (ja) * 2007-01-24 2008-08-07 Sony Corp 基体処理方法及び基体処理装置
JP2020126974A (ja) * 2019-02-06 2020-08-20 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2021061400A (ja) * 2019-10-02 2021-04-15 セメス カンパニー，リミテッド 基板処理設備及び基板処理方法

Also Published As

Publication number Publication date
TW202325416A (zh) 2023-07-01
CN117716476A (zh) 2024-03-15
JP2025143542A (ja) 2025-10-01
WO2023013435A1 (ja) 2023-02-09
US20250087501A1 (en) 2025-03-13
JP7720915B2 (ja) 2025-08-08
KR20240038070A (ko) 2024-03-22

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