KR20240038070A - 기판 처리 방법 및 기판 처리 장치 - Google Patents

기판 처리 방법 및 기판 처리 장치 Download PDF

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Publication number
KR20240038070A
KR20240038070A KR1020247006511A KR20247006511A KR20240038070A KR 20240038070 A KR20240038070 A KR 20240038070A KR 1020247006511 A KR1020247006511 A KR 1020247006511A KR 20247006511 A KR20247006511 A KR 20247006511A KR 20240038070 A KR20240038070 A KR 20240038070A
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KR
South Korea
Prior art keywords
processing
pressure
substrate
fluid
valve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247006511A
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English (en)
Korean (ko)
Inventor
겐타로 고시
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20240038070A publication Critical patent/KR20240038070A/ko
Pending legal-status Critical Current

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    • H01L21/02101—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H01L21/02057—
    • H01L21/67034—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/80—Cleaning only by supercritical fluids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

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  • Cleaning Or Drying Semiconductors (AREA)
KR1020247006511A 2021-08-05 2022-07-22 기판 처리 방법 및 기판 처리 장치 Pending KR20240038070A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021129085 2021-08-05
JPJP-P-2021-129085 2021-08-05
PCT/JP2022/028434 WO2023013435A1 (ja) 2021-08-05 2022-07-22 基板処理方法および基板処理装置

Publications (1)

Publication Number Publication Date
KR20240038070A true KR20240038070A (ko) 2024-03-22

Family

ID=85155585

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247006511A Pending KR20240038070A (ko) 2021-08-05 2022-07-22 기판 처리 방법 및 기판 처리 장치

Country Status (5)

Country Link
US (1) US20250087501A1 (https=)
JP (2) JP7720915B2 (https=)
KR (1) KR20240038070A (https=)
CN (1) CN117716476A (https=)
WO (1) WO2023013435A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7614273B1 (ja) * 2023-08-28 2025-01-15 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2025078407A (ja) 2023-11-08 2025-05-20 東京エレクトロン株式会社 基板処理装置および基板処理方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008532268A (ja) 2005-02-18 2008-08-14 東京エレクトロン株式会社 誘電体膜の処理のための方法およびシステム

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2574781B2 (ja) * 1987-01-21 1997-01-22 株式会社日立製作所 超臨界ガス又は液化ガスによる基板の洗浄方法
JP3835593B2 (ja) * 2001-06-13 2006-10-18 大日本スクリーン製造株式会社 高圧処理装置
JP2004228526A (ja) * 2003-01-27 2004-08-12 Tokyo Electron Ltd 基板処理方法および半導体装置の製造方法
JP2004225152A (ja) * 2003-01-27 2004-08-12 Tokyo Electron Ltd 基板処理方法および半導体装置の製造方法
JP4464125B2 (ja) * 2003-12-22 2010-05-19 ソニー株式会社 構造体の作製方法及びシリコン酸化膜エッチング剤
US20060135047A1 (en) * 2004-12-22 2006-06-22 Alexei Sheydayi Method and apparatus for clamping a substrate in a high pressure processing system
US7550075B2 (en) * 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
JP2006319207A (ja) * 2005-05-13 2006-11-24 Horiba Stec Co Ltd 流量制御装置、薄膜堆積装置および流量制御方法
JP2007234862A (ja) * 2006-03-01 2007-09-13 Dainippon Screen Mfg Co Ltd 高圧処理装置および高圧処理方法
JP2008182034A (ja) * 2007-01-24 2008-08-07 Sony Corp 基体処理方法及び基体処理装置
JP2018081966A (ja) * 2016-11-14 2018-05-24 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP6740098B2 (ja) * 2016-11-17 2020-08-12 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP7080134B2 (ja) * 2018-08-07 2022-06-03 東京エレクトロン株式会社 基板処理装置のパーティクル除去方法および基板処理装置
JP7197396B2 (ja) * 2019-02-06 2022-12-27 東京エレクトロン株式会社 基板処理装置及び基板処理方法
KR102262250B1 (ko) * 2019-10-02 2021-06-09 세메스 주식회사 기판 처리 설비 및 기판 처리 방법
JP7605610B2 (ja) * 2020-10-23 2024-12-24 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP7598240B2 (ja) * 2020-12-25 2024-12-11 東京エレクトロン株式会社 基板乾燥方法および基板乾燥装置
JP7529629B2 (ja) * 2021-07-26 2024-08-06 東京エレクトロン株式会社 基板処理方法および基板処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008532268A (ja) 2005-02-18 2008-08-14 東京エレクトロン株式会社 誘電体膜の処理のための方法およびシステム

Also Published As

Publication number Publication date
US20250087501A1 (en) 2025-03-13
TW202325416A (zh) 2023-07-01
CN117716476A (zh) 2024-03-15
WO2023013435A1 (ja) 2023-02-09
JP2025143542A (ja) 2025-10-01
JPWO2023013435A1 (https=) 2023-02-09
JP7720915B2 (ja) 2025-08-08

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