CN117716476A - 基板处理方法和基板处理装置 - Google Patents

基板处理方法和基板处理装置 Download PDF

Info

Publication number
CN117716476A
CN117716476A CN202280052438.7A CN202280052438A CN117716476A CN 117716476 A CN117716476 A CN 117716476A CN 202280052438 A CN202280052438 A CN 202280052438A CN 117716476 A CN117716476 A CN 117716476A
Authority
CN
China
Prior art keywords
processing
substrate
pressure
fluid
supply line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280052438.7A
Other languages
English (en)
Chinese (zh)
Inventor
五师源太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN117716476A publication Critical patent/CN117716476A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/80—Cleaning only by supercritical fluids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
CN202280052438.7A 2021-08-05 2022-07-22 基板处理方法和基板处理装置 Pending CN117716476A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021129085 2021-08-05
JP2021-129085 2021-08-05
PCT/JP2022/028434 WO2023013435A1 (ja) 2021-08-05 2022-07-22 基板処理方法および基板処理装置

Publications (1)

Publication Number Publication Date
CN117716476A true CN117716476A (zh) 2024-03-15

Family

ID=85155585

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280052438.7A Pending CN117716476A (zh) 2021-08-05 2022-07-22 基板处理方法和基板处理装置

Country Status (5)

Country Link
US (1) US20250087501A1 (https=)
JP (2) JP7720915B2 (https=)
KR (1) KR20240038070A (https=)
CN (1) CN117716476A (https=)
WO (1) WO2023013435A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7614273B1 (ja) * 2023-08-28 2025-01-15 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2025078407A (ja) 2023-11-08 2025-05-20 東京エレクトロン株式会社 基板処理装置および基板処理方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2574781B2 (ja) * 1987-01-21 1997-01-22 株式会社日立製作所 超臨界ガス又は液化ガスによる基板の洗浄方法
US6606352B2 (en) * 1999-01-15 2003-08-12 Broadcom Corporation Method and apparatus for converting between byte lengths and burdened burst lengths in a high speed modem
JP3835593B2 (ja) * 2001-06-13 2006-10-18 大日本スクリーン製造株式会社 高圧処理装置
JP2004225152A (ja) * 2003-01-27 2004-08-12 Tokyo Electron Ltd 基板処理方法および半導体装置の製造方法
JP2004228526A (ja) * 2003-01-27 2004-08-12 Tokyo Electron Ltd 基板処理方法および半導体装置の製造方法
US7345000B2 (en) 2003-10-10 2008-03-18 Tokyo Electron Limited Method and system for treating a dielectric film
JP4464125B2 (ja) * 2003-12-22 2010-05-19 ソニー株式会社 構造体の作製方法及びシリコン酸化膜エッチング剤
US20060135047A1 (en) * 2004-12-22 2006-06-22 Alexei Sheydayi Method and apparatus for clamping a substrate in a high pressure processing system
US7550075B2 (en) * 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
JP2006319207A (ja) * 2005-05-13 2006-11-24 Horiba Stec Co Ltd 流量制御装置、薄膜堆積装置および流量制御方法
JP2007234862A (ja) * 2006-03-01 2007-09-13 Dainippon Screen Mfg Co Ltd 高圧処理装置および高圧処理方法
JP2008182034A (ja) * 2007-01-24 2008-08-07 Sony Corp 基体処理方法及び基体処理装置
JP2018081966A (ja) * 2016-11-14 2018-05-24 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP6740098B2 (ja) * 2016-11-17 2020-08-12 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP7080134B2 (ja) * 2018-08-07 2022-06-03 東京エレクトロン株式会社 基板処理装置のパーティクル除去方法および基板処理装置
JP7197396B2 (ja) * 2019-02-06 2022-12-27 東京エレクトロン株式会社 基板処理装置及び基板処理方法
KR102262250B1 (ko) * 2019-10-02 2021-06-09 세메스 주식회사 기판 처리 설비 및 기판 처리 방법
JP7605610B2 (ja) * 2020-10-23 2024-12-24 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP7507065B2 (ja) * 2020-11-09 2024-06-27 東京エレクトロン株式会社 処理装置及び処理方法
WO2022109547A1 (en) * 2020-11-20 2022-05-27 Mks Instruments, Inc. Method and apparatus for pulse gas delivery with pressure control
JP7598240B2 (ja) * 2020-12-25 2024-12-11 東京エレクトロン株式会社 基板乾燥方法および基板乾燥装置
JP7529629B2 (ja) * 2021-07-26 2024-08-06 東京エレクトロン株式会社 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
TW202325416A (zh) 2023-07-01
JPWO2023013435A1 (https=) 2023-02-09
JP2025143542A (ja) 2025-10-01
WO2023013435A1 (ja) 2023-02-09
US20250087501A1 (en) 2025-03-13
JP7720915B2 (ja) 2025-08-08
KR20240038070A (ko) 2024-03-22

Similar Documents

Publication Publication Date Title
KR102656997B1 (ko) 기판 처리 장치의 파티클 제거 방법 및 기판 처리 장치
CN108155117B (zh) 超临界流体制造装置和基板处理装置
CN110957239B (zh) 基片处理系统和处理流体供给方法
KR102480691B1 (ko) 기판 처리 장치, 기판 처리 방법 및 기억 매체
CN108155116B (zh) 基板处理装置的清洗方法和基板处理装置的清洗系统
US10381246B2 (en) Substrate processing apparatus
KR20230159354A (ko) 기판 처리 장치, 기판 처리 방법 및 기억 매체
JP7113949B2 (ja) 基板処理装置
KR102482206B1 (ko) 기판 처리 장치 및 기판 처리 방법
CN112490143B (zh) 基片处理装置的清洗方法和基片处理系统
JP2025143542A (ja) 基板処理方法および基板処理装置
CN116936341A (zh) 基板处理方法、基板处理装置以及记录介质
CN111211069A (zh) 基板处理装置以及基板处理方法
CN115176335A (zh) 基板处理装置以及基板处理方法
JP6836939B2 (ja) 基板処理装置および基板処理方法
TWI913495B (zh) 基板處理方法及基板處理裝置
CN119965118A (zh) 基片处理装置和基片处理方法
KR20250093514A (ko) 기판 처리 장치, 및 기판 처리 방법
TW202431478A (zh) 處理流體供應裝置及處理流體供應方法
WO2024024804A1 (ja) 基板処理方法および基板処理装置
JP2021057618A (ja) 基板処理装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination