JP7720334B2 - 半導体レーザ素子 - Google Patents

半導体レーザ素子

Info

Publication number
JP7720334B2
JP7720334B2 JP2022578164A JP2022578164A JP7720334B2 JP 7720334 B2 JP7720334 B2 JP 7720334B2 JP 2022578164 A JP2022578164 A JP 2022578164A JP 2022578164 A JP2022578164 A JP 2022578164A JP 7720334 B2 JP7720334 B2 JP 7720334B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor
semiconductor laser
type
ridge portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022578164A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022163237A1 (https=
JPWO2022163237A5 (https=
Inventor
康光 久納
篤志 山田
洋希 永井
東吾 中谷
直人 柳田
雅幸 畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Publication of JPWO2022163237A1 publication Critical patent/JPWO2022163237A1/ja
Publication of JPWO2022163237A5 publication Critical patent/JPWO2022163237A5/ja
Application granted granted Critical
Publication of JP7720334B2 publication Critical patent/JP7720334B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/168—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising current blocking layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2022578164A 2021-01-29 2021-12-22 半導体レーザ素子 Active JP7720334B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163143463P 2021-01-29 2021-01-29
US63/143,463 2021-01-29
PCT/JP2021/047705 WO2022163237A1 (ja) 2021-01-29 2021-12-22 半導体レーザ素子

Publications (3)

Publication Number Publication Date
JPWO2022163237A1 JPWO2022163237A1 (https=) 2022-08-04
JPWO2022163237A5 JPWO2022163237A5 (https=) 2023-10-24
JP7720334B2 true JP7720334B2 (ja) 2025-08-07

Family

ID=82654378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022578164A Active JP7720334B2 (ja) 2021-01-29 2021-12-22 半導体レーザ素子

Country Status (4)

Country Link
US (1) US20230387662A1 (https=)
JP (1) JP7720334B2 (https=)
CN (1) CN116746012A (https=)
WO (1) WO2022163237A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332600A (ja) 2005-05-27 2006-12-07 Samsung Electronics Co Ltd 窒化物系半導体レーザダイオード及びその製造方法
JP2010074131A (ja) 2008-08-21 2010-04-02 Panasonic Corp 半導体発光素子及びその製造方法
JP2010278131A (ja) 2009-05-27 2010-12-09 Panasonic Corp 半導体レーザ素子及びその製造方法
JP2011124442A (ja) 2009-12-11 2011-06-23 Panasonic Corp 半導体レーザ装置及びその製造方法
JP2018098262A (ja) 2016-12-08 2018-06-21 住友電気工業株式会社 量子カスケード半導体レーザ
JP2018152430A (ja) 2017-03-10 2018-09-27 住友電気工業株式会社 半導体レーザ

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2222307B (en) * 1988-07-22 1992-04-01 Mitsubishi Electric Corp Semiconductor laser
JPH06302906A (ja) * 1993-04-12 1994-10-28 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
JPH1168231A (ja) * 1997-08-25 1999-03-09 Mitsubishi Electric Corp 半導体レーザ，及びその製造方法
JP2000174385A (ja) * 1998-07-15 2000-06-23 Sony Corp 半導体レ―ザ
EP1583187B1 (en) * 2000-10-12 2007-07-04 FUJIFILM Corporation Semiconductor laser device with a current non-injection region near a resonator end face
JP4504610B2 (ja) * 2002-03-01 2010-07-14 株式会社日立製作所 リッジ型半導体レーザ素子
JP2006269526A (ja) * 2005-03-22 2006-10-05 Fuji Photo Film Co Ltd 半導体レーザ装置および光通信装置
JP2010114202A (ja) * 2008-11-05 2010-05-20 Sony Corp 半導体レーザ素子
JP2010123674A (ja) * 2008-11-18 2010-06-03 Panasonic Corp 半導体レーザ装置
JP2011159673A (ja) * 2010-01-29 2011-08-18 Jvc Kenwood Holdings Inc 半導体レーザ素子及び半導体レーザアレイ
JP6943570B2 (ja) * 2015-02-12 2021-10-06 古河電気工業株式会社 半導体レーザ素子およびレーザ光照射装置
JP2017139319A (ja) * 2016-02-03 2017-08-10 浜松ホトニクス株式会社 半導体レーザ素子
JP7716389B2 (ja) * 2020-04-06 2025-07-31 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ装置及び半導体レーザ装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332600A (ja) 2005-05-27 2006-12-07 Samsung Electronics Co Ltd 窒化物系半導体レーザダイオード及びその製造方法
JP2010074131A (ja) 2008-08-21 2010-04-02 Panasonic Corp 半導体発光素子及びその製造方法
JP2010278131A (ja) 2009-05-27 2010-12-09 Panasonic Corp 半導体レーザ素子及びその製造方法
JP2011124442A (ja) 2009-12-11 2011-06-23 Panasonic Corp 半導体レーザ装置及びその製造方法
JP2018098262A (ja) 2016-12-08 2018-06-21 住友電気工業株式会社 量子カスケード半導体レーザ
JP2018152430A (ja) 2017-03-10 2018-09-27 住友電気工業株式会社 半導体レーザ

Also Published As

Publication number Publication date
WO2022163237A1 (ja) 2022-08-04
JPWO2022163237A1 (https=) 2022-08-04
US20230387662A1 (en) 2023-11-30
CN116746012A (zh) 2023-09-12

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